浏览全部资源
扫码关注微信
1. 山东省激光偏光与信息技术重点实验室 曲阜师范大学物理系, 山东 曲阜 273165
2. 中科院上海微系统与信息技术研究所 信息功能材料国家重点实验室, 上海 200050
收稿日期:2012-12-18,
修回日期:2013-01-25,
网络出版日期:2012-12-31,
纸质出版日期:2013-04-10
移动端阅览
龙睿, 王海龙, 成若海, 龚谦, 严进一, 汪洋, 陈朋, 宋志棠, 封松林. 外腔反馈对量子点激光器输出特性的影响[J]. 发光学报, 2013,34(4): 474-479
LONG Rui, WANG Hai-long, CHENG Ruo-hai, GONG Qian, YAN Jin-yi, WANG Yang, CHEN Peng, SONG Zhi-tang, FENG Song-lin. Influence of External Cavity Feedback on The Output Characteristics of Quantum-dot Lasers[J]. Chinese Journal of Luminescence, 2013,34(4): 474-479
龙睿, 王海龙, 成若海, 龚谦, 严进一, 汪洋, 陈朋, 宋志棠, 封松林. 外腔反馈对量子点激光器输出特性的影响[J]. 发光学报, 2013,34(4): 474-479 DOI: 10.3788/fgxb20133404.0474.
LONG Rui, WANG Hai-long, CHENG Ruo-hai, GONG Qian, YAN Jin-yi, WANG Yang, CHEN Peng, SONG Zhi-tang, FENG Song-lin. Influence of External Cavity Feedback on The Output Characteristics of Quantum-dot Lasers[J]. Chinese Journal of Luminescence, 2013,34(4): 474-479 DOI: 10.3788/fgxb20133404.0474.
在对光栅外腔量子点激光器进行理论研究的基础上
分析了外腔反馈对Littrow型光栅外腔量子点激光器输出功率、调谐范围等输出特性的影响
发现器件参数的选择对外腔激光器的性能影响很大。对外腔激光器的输出功率和调谐范围进行了理论计算
并与实验结果进行了对比。计算得到的外腔激光器的输出功率与实验结果符合得很好
忽略了非线性增益相关的增益抑制的单模调谐范围理论计算值稍小于实验结果。
External-cavity lasers (ECLs) play an essential role in numerous areas such as optical telecommunication
environment monitoring
medical treatment
and spectroscopy. Due to unique features of the quantum dot material
i.e.
low density of states and broad gain profile
quantum dot lasers are really suitable for high performance ECLs. The frequency stability and the linewidth can be improved by using an external cavity. However
optical feedback may cause instabilities. It is important to know the characteristics of a semiconductor laser with external optical feedback in such systems. The common Littrow-type external cavity laser contains a collimating lens and a diffraction grating as the end mirror. The first-order diffracted beam provides optical feedback to the laser diode chip
and the emission wavelength can be tuned by rotating the diffraction grating. In this paper
the theory of grating external cavity quantum dot lasers is discussed. The influences of external cavity feedback on output power and maximum tuning range of the Littrow-type external cavity quantum dot laser are analyzed. Device parameters have a significant impact on the external cavity laser performance. Output power and tuning range of external cavity quantum dot lasers are numerically simulated and compared with the experimental results. The theoretical results of output power agree well with the experimental data
and the tuning range value is slightly less than the experimental results without considering the suppression relative to nonlinear gain.
Liu Y C, Zhang Y Q, He S F, et al. 1.3 μm InGaAsP/InP DCC structure semiconductor laser [J]. Chin. J. Lumin.(发光学报), 1990, 11(1):75-78 (in Chinese).[2] Acket G, Lenstra D, Den B, et al. The influence of feedback intensity on longitudinal mode properties and optical noise index-guided semiconductor lasers [J]. IEEE J. Quantum Electron., 1984, 20(10):1163-1169.[3] Lei P S, Xue L F, He J, et al. Output characteristics of Littrow-type grating external cavity semiconductor lasers [J]. Laser & Opto. Prog.(激光与光电子学进展), 2011, 48(3):21-25 (in Chinese).[4] Jon P, Sivaraman S, Alan K S. Dual-channel chaotic optical communications using external cavity semiconductor lasers [J]. J. Opt. Soc. Am. B-Opt. Phys., 2004, 21(3):514-521.[5] Hancock G, Peverall R, Ritchie G A D, et al. Direct and wavelength modulation spectroscopy using a CW external cavity quantum cascade laser [J]. Appl. Phys. Lett., 2009, 94(20):1110-1112.[6] Gobbi R, Sahoo N C, Vejian R. High-accuracy length metrology using multiple-stage swept-frequency interferometry with laser diobes [J]. Meas.Sci.& Technol., 1998, 9(7):1036-1041.[7] Liu C, Ge J H, Chen J. Invertigation of loss and threshold characteristics in the laser diode with external feedback [J]. Chin. J. Lasers (中国激光), 2004, 31(12):1413-1416 (in Chinese).[8] Osmundseen J H, Tromborg B, Olesen H. Experimental investigation of stability properties for a semiconductor laser with optical feedback [J]. Electron. Lett., 1983, 19(25):1068-1070.[9] Arakawa Y, Sakaki H. Multidimensional quantum well laser and temperature dependence of its threshold current [J]. Appl. Phys. Lett., 1982, 40(11):939-941.[10] Li Z J, Lu P, Li T, et al. Temperature characteristic of 1.06 μm InGaAs/InGaAsP quantum well laser diode [J]. Chin. J. Lumin.(发光学报), 2012, 33(6):647-650 (in Chinese).[11] Asada M, Miyamoto Y, Suematsu Y, et al. Gain and the threshold of three dimensional quantum-box lasers [J]. IEEE J. Quantum Electron., 1986, 22(9):1915-1921.[12] Du B X. Theoretical analysis on threshold of QW semiconductor lasers [J]. Chin. J. Lumin.(发光学报), 2000, 21(3):279-281 (in Chinese).[13] Li H, Liu G T, Varangis P M, et al. 150-nm tuning range in a grating-coupled external cavity quantum-dot laser [J]. IEEE Photon. Technol. Lett., 2000, 12(7):759-761.[14] Ortner G, Allen C N, Dion C, et al. External cavity InAs/InP quantum dot laser with a tuning range of 166 nm [J]. Appl. Phys. Lett., 2006, 88(12):1119-1121.[15] Allen C N, Poole P J, Barrios P, et al. External cavity quantum dot tunable laser through 1.55 μm [J]. Appl. Phys. Lett., 2006, 88(11):3109-3111.[16] Varangis P M, Li H, Liu G T, et al. Low-threshold quantum dot lasers with 201 nm tuning range [J]. Electron. Lett., 2000, 36(18):1544-1545.[17] Kakiuchida H, Ohtsubo J. Characteristics of a semiconductor laser with external feedback [J]. IEEE J. Quantum Electrons, 1994, 30(9):2087-2097.[18] Jiang P F. Study on The Spectral Characteristics of Grating External-cavity Semiconductor Lasers. Beijing: Institute of Semiconductors Chinese Academy of Sciences, 2006 (in Chinese).[19] Mroziewicz B. External cavity wavelength tunable semiconductor laser-a review [J]. Opto-Electron. Rev., 2008, 16(4):347-366[20] Chen P. High Performance Tunable External-cavity InAs/InP Quantum-dot Lasers. Shanghai: Shanghai Institute of Micro-system and Information Technology, 2011 (in Chinese).
0
浏览量
248
下载量
2
CSCD
关联资源
相关文章
相关作者
相关机构