衬底对PTCDA薄膜结构与电荷输运特性的影响

杨汀; 谢吉鹏; 范国莹; 吕文理; 彭应全

doi:10.3788/fgxb20123303.0334

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衬底对PTCDA薄膜结构与电荷输运特性的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 衬底对PTCDA薄膜结构与电荷输运特性的影响
- Effect of Substrate on The Structure and Charge Transport Property of PTCDA Thin Film
- 发光学报 2012年33卷第3期页码：334-340
- 作者机构：
  
  1. 兰州大学物理学院微电子研究所,甘肃兰州,730000
  2. 空军大连通信士官学校基础部,辽宁大连,116600
  3. 兰州大学磁学与磁性材料教育部重点实验室,甘肃兰州,730000
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10974074)();甘肃省自然科学基金(0803RJZA104)资助项目()
- DOI：10.3788/fgxb20123303.0334
  中图分类号： TN241
- 收稿日期：2011-12-06，
  
  修回日期：2011-12-23，
  
  网络出版日期：2012-03-10，
  
  纸质出版日期：2012-03-10
- 稿件说明：
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杨汀, 谢吉鹏, 范国莹, 吕文理, 彭应全. 衬底对PTCDA薄膜结构与电荷输运特性的影响[J]. 发光学报, 2012,33(3): 334-340

YANG Ting, XIE Ji-peng, FAN Guo-ying, LV Wen-li, PENG Ying-quan. Effect of Substrate on The Structure and Charge Transport Property of PTCDA Thin Film[J]. Chinese Journal of Luminescence, 2012,33(3): 334-340
杨汀, 谢吉鹏, 范国莹, 吕文理, 彭应全. 衬底对PTCDA薄膜结构与电荷输运特性的影响[J]. 发光学报, 2012,33(3): 334-340 DOI： 10.3788/fgxb20123303.0334.

YANG Ting, XIE Ji-peng, FAN Guo-ying, LV Wen-li, PENG Ying-quan. Effect of Substrate on The Structure and Charge Transport Property of PTCDA Thin Film[J]. Chinese Journal of Luminescence, 2012,33(3): 334-340 DOI： 10.3788/fgxb20123303.0334.

摘要

在不同导电衬底(Au

Al和ITO)上制备了PTCDA薄膜

用XRD和AFM技术研究了PTCDA薄膜的结构和表面形貌。结果表明

薄膜中的大部分PTCDA分子平面与衬底不平行

这表明薄膜垂直方向的电流传导将以电子传输为主;在ITO和Au衬底上生长的PTCDA薄膜晶粒排列规则

在薄膜垂直方向呈现出较好的电子传输性能;而在Al衬底上生长的PTCDA薄膜晶粒排列无序

电子传输性能差。通过制备单层结构有机薄膜器件

研究了PTCDA薄膜垂直方向的电子迁移率。综合应用金属-有机界面的热电子发射理论和有机层体内空间电荷限制传导理论

并考虑电场强度对迁移率变化的影响

对ITO/PTCDA/Al器件的电流密度-电压曲线进行拟合

得到ITO衬底上生长的PTCDA薄膜在垂直方向随电场强度变化的电子迁移率数值。

Abstract

Perylene-3

10-tetracarboxylic acid dianhydride (PTCDA) thin films were vacuum evaporated on Au

Al and ITO substrates

their structure and morphology were analysed by X-ray spectroscopy (XRD) and atomic force microscope (AFM). The results show that most of PTCDA molecules don't lie parallel to the substrate

which indicates that electron transport dominates the current conduction in the direction perpendicular to the film plane. PTCDA films grown on ITO and Au arrange regularly. It shows good electronic transport properties perpendicular to the film plane. But the grains of PTCDA film grown on Al arrange disorderly resulting in poor performance of electronic conduction. By the thermionic emission theory at metal-organic interface and space charge limited current conduction theory in the organic bulk and considering the electric field effect on mobility

current density-voltage curves of ITO/PTCDA/Al devices were fitted in different PTCDA film's thickness. The numerical value of electron mobility dependent on electric field was determined for the specific PTCDA film thickness.

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references

Forrest S R, Kaplan M L, Schmidt P H. Organic-on-inorganic semiconductor contact barrier diodes. I. Theory with applications to organic thin films and prototype devices [J]. J. Appl. Phys., 1984, 55(6):1492-1507.[2] Chen Hui, Gu Shulin, Zhu Shunmin. Influence of different substrate and pressure on growth and properties of ZnMgO films [J]. Chin. J. Lumin. (发光学报), 2011, 32(5):482-486 (in Chinese).[3] Shen Z, Burrows P E, Bulovic V, et al. Three-color, tunable, organic light-emitting devices [J]. Science, 1997, 276:2009-2011.[4] Cheng Cuiran, Chen Yuhuan, Qin Dashan, et al. Lithium carbonate doped 3,4,9,10 - perylenetetracarboxylic dianhydride for enhanced performance in organic light emitting diode [J]. Chin. J. Lumin. (发光学报), 2011, 32(4):387-392 (in Chinese).[5] Yamada K, Takeya J, Takenobu T, et al. Effects of gate dielectrics and metal electrodes on air-stable n-channel perylene tetracarboxylic dianhydride single-crystal field-effect transistors [J]. Appl. Phys. Lett., 2008, 92(25):253311-1-3.[6] Oku T, Noma T, Suzuki A, et al. Fabrication and characterization of fullerene/porphyrin bulk heterojunction solar cells [J]. J. Phys. Chem. Solids, 2010, 71(4):551-555.[7] Bhler A, Urbach P, Schbel J, et al. Organic heterostructures for electronic and photonic devices [J]. Physica E, 1998, 2(1-4):562-572.[8] So F F, Forrest S R. Organic-on-inorganic semiconductor photodetector [J]. Electron Devices, 1989, 36(1):66-69.[9] Ostrick J R, Dodabalapur A, Torsi L, et al. Conductivity-type anisotropy in molecular solids [J]. J. Appl. Phys., 1997, 81(10):6804-6808.[10] Wuesten J, Ziegler C, Ertl T. Electron transport in pristine and alkali metal doped perylene-3,4,9,10-tetracarboxylicdianhydride (PTCDA) thin films [J]. Phys. Rev. B, 2006, 74(12):125205-1-7.[11] Hudej R, Bratina G. Evidence of bipolar charge transport in PTCDA [J]. Solid State Commun., 2002, 123(3-4):155-160.[12] Hudej R, Bratina G. Electrical conductivity in metal/3,4,9,10-perylenetetracarboxylic dianhydride/metal structures [J]. J. Appl. Phys., 2003, 93(10):6090-6094.[13] Cheung C H, Kwok K C, Tse S C, et al. Determination of carrier mobility in phenylamine by time-of-flight, dark-injection, and thin film transistor techniques [J]. J. Appl. Phys., 2008, 103(9):093705-1-5.[14] Chu T Y, Song O K. Hole mobility of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl) benzidine investigated by using space-charge-limited currents [J]. Appl. Phys. Lett., 2007, 90(20):203512-1-3.[15] Nguyen N D, Schmeits M, Loebl H P. Determination of charge-carrier transport in organic devices by admittance spectroscopy: Application to hole mobility in -NPD [J]. Phys. Rev. B, 2007, 75(7):075307-1-13.[16] Klenkler R A, Xu G, Aziz H, et al. Charge-carrier mobility in an organic semiconductor thin film measured by photoinduced electroluminescence [J]. Appl. Phys. Lett., 2006, 88(24):242101-1-3.[17] Wang Z B, Helander M G, Greiner M T, et al. Carrier mobility of organic semiconductors based on current-voltage characteristics [J]. J. Appl. Phys., 2010, 107(3):034506-1-4.[18] Peng Y Q, Yang J H. Field distribution and criterion for bulk-limited and injection-limited current conduction in single layer organic light-emitting devices [J]. Appl. Phys. A, 2005, 80:1511-1516.[19] Yuan Jianting, Peng Yingquan, Yang Qingsen, et al. Effect of mobility on the distribution of electric field and carrier density in single layer organic light emitting devices [J]. Chin. J. Lumin.(发光学报), 2008, 29(6):962-966 (in Chinese) .[20] Agrawal R, Ghosh S. Electrical characterization of Fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces [J]. Appl. Phys. Lett., 2006, 89(22):222114-1-3.[21] Pavlica E, Bratina G. The role of space-charge-induced electric field on transient photocurrent response in organic semiconductors [J]. Phys. Status Solidi B, 2006, 243(2):473-482.

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