MOCVD自催化法在Si(100)衬底上生长InP/InGaAs核壳结构纳米线

张登巍; 缪国庆

doi:10.3788/fgxb20123303.0294

您当前的位置：

首页 >

文章列表页 >

MOCVD自催化法在Si(100)衬底上生长InP/InGaAs核壳结构纳米线

器件制备及器件物理 | 更新时间：2020-08-12

- MOCVD自催化法在Si(100)衬底上生长InP/InGaAs核壳结构纳米线
- The Catalyst-free InP/InGaAs Core-shell Nanowires Growth on Silicon by Metal Organic Chemical Vapor Deposition
- 发光学报 2012年33卷第3期页码：294-298
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 发光学与应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金(50972141)();国家重点基础研究发展计划("();973"();,2012CB619200)资助项目()
- DOI：10.3788/fgxb20123303.0294
  中图分类号： O472.3
- 收稿日期：2011-10-08，
  
  修回日期：2011-11-05，
  
  网络出版日期：2012-03-10，
  
  纸质出版日期：2012-03-10
- 稿件说明：
移动端阅览
张登巍, 缪国庆. MOCVD自催化法在Si(100)衬底上生长InP/InGaAs核壳结构纳米线[J]. 发光学报, 2012,33(3): 294-298

ZHANG Deng-wei, MIAO Guo-qing. The Catalyst-free InP/InGaAs Core-shell Nanowires Growth on Silicon by Metal Organic Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2012,33(3): 294-298
张登巍, 缪国庆. MOCVD自催化法在Si(100)衬底上生长InP/InGaAs核壳结构纳米线[J]. 发光学报, 2012,33(3): 294-298 DOI： 10.3788/fgxb20123303.0294.

ZHANG Deng-wei, MIAO Guo-qing. The Catalyst-free InP/InGaAs Core-shell Nanowires Growth on Silicon by Metal Organic Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2012,33(3): 294-298 DOI： 10.3788/fgxb20123303.0294.

摘要

采用自催化法

利用金属有机化学气相沉积技术

在Si(100)衬底上成功制备了InP/InGaAs核壳结构纳米线。通过扫描电子显微镜观察纳米线形貌

在核壳结构纳米线的顶端催化剂转化成了颗粒状晶体。利用X射线衍射和透射电子显微镜研究了InP纳米线上生长InGaAs外壳的过程

并应用X射线能量色散能谱仪对纳米线顶端进行了轴向和径向的线扫描

得到了纳米线上元素组分分布。催化剂的转化发生在制备InGaAs壳之前的升温过程中

且形成的晶体中含有合金成分。InGaAs壳的组分调整可以通过改变生长过程中生长源气体的流量来实现。

Abstract

Catalyst-free InP/InGaAs core-shell nanowires were grown on Si(100) substrates by metal-organic chemical vapor deposition. These nanowires have quite different properties to Au-catalyst core-shell nanowires. By using scanning electron microscope

we found that the catalyst at the top of the InP nanowires had been transformed into crystal after the InGaAs core grown on them. Meanwhile

the diameter of the nanowires has greatly increased with their length changed quite little. The X-ray diffraction patterns indicate that the transformation of the catalyst is attributed to the temperature rise under PH

protection before InGaAs core growth. By transmission electron microscope and energy dispersive X-ray spectroscopy

it is proved that the transformation of catalyst is prior to the InGaAs core growth and is cover by InGaAs which is same to the nanowires sidewall.

关键词

Keywords

references

Lauhon L J, Gudiksen M S, Wang C L, et al. Epitaxial core-shell and core-multishell nanowire heterostructure [J]. Nature, 2002, 420(6911):57-61.[2] Skld N, Karlsson L S, Larsson M W, et al. Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires [J]. Nano Lett., 2005, 5(10):1943-1947.[3] Duan X, Huang Y, Cui Y, et al. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J]. Nature, 2001, 409(6816):66-69.[4] Qian F, Gradecak S, Li Y, et al. Core/multishell nanowire heterostructure as multicolor, high-efficiency light-emitting diodes [J]. Nano Lett., 2005, 5(11):2287-2291.[5] Minot E D, Kelkensberg F, Van Kouwen M, et al. Single quantum dot nanowire LEDs [J]. Nano Lett., 2007, 7(2):367-371.[6] Bao J, Zimmler M A, Capasso F, et al. Broadband ZnO single-nanowire light-emitting diode [J]. Nano Lett., 2006, 6(8):1719-1722.[7] Duan X, Huang Y, Agarwal R, et al. Single-nanowire electrically driven lasers [J]. Nature, 2003, 421(6920):241-245.[8] Van Vugt L K, Ruhle S, Vanmaekelbergh D, et al. Phase-correlated nondirectional laser emission from the end facets of a ZnO [J]. Nano Lett., 2006, 6(12):2707-2711.[9] Dong Yajie, Tian Bozhi, Thomas J Kempa, et al. Coaxial silicon nanowires as solar cells and nanoelectronic power sources [J]. Nature, 2007, 449(7164):885-889.[10] Thomas J K, Tian B Z, Kim D R, et al. Single and tandem axial p-i-n nanowire photovoltaic devices [J]. Nano Lett., 2008, 8(10):3456-3460.[11] Wei W, Bao X Y, Soci C, et al. Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection [J]. Nano Lett., 2009, 9(8):2926-2934.[12] Czaban J A, Thompson D A, LaPierre R R, et al. GaAs core-shell nanowires for photovaltaic applications [J]. Nano Lett., 2009, 9(1):148-154.[13] Law M, Greene L E, Johnson J C, et al. Nanowire dye-sensitized solar cells [J]. Nat. Mater., 2005, 4(6):455-459.[14] Gao P X, Song J, Liu J, et al. Nanowire prizoelectric nanogenerators on plastic substrates as flexible power source for nanodevices [J]. Adv. Mater., 2007, 19(1):67-72.[15] Cornet D M, LaPierre R R. InGaAs/InP core-shell and axial heterostructure nanowires [J]. Nanotechnology, 2007, 18(38):1-7.[16] Yu Shuzhen, Miao Guoqing, Jin Yixin, et al. The crystal structure and optical properties of InP nanowires grown on Si substrate [J]. Chin. J. Lumin. (发光学报), 2010, 31(5):767-772 (in Chinese).

浏览量

163

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

MOCVD生长Si衬底上HT-AlN缓冲层低生长压力对GaN薄膜的影响

H₂载气流量对AlN缓冲层生长的影响

缓冲层生长温度对In_0.82Ga_0.18As 薄膜结构及电学性能的影响

MOCVD生长MgZnO 薄膜及太阳盲紫外光电探测器

射频辅助N掺杂ZnO薄膜的生长及其光电特性