ITO界面调制层对GZO电极LED器件性能的影响

王万晶; 李喜峰; 石继峰; 张建华

doi:10.3788/fgxb20123302.0210

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ITO界面调制层对GZO电极LED器件性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- ITO界面调制层对GZO电极LED器件性能的影响
- Effect of ITO Interface Modulation Layer on The Performances of LEDs with Ga-doped ZnO Electrode
- 发光学报 2012年33卷第2期页码：210-215
- 作者机构：
  
  1. 上海大学新型显示技术及应用集成教育部重点实验室上海,200072
  2. 上海大学机电工程与自动化学院上海,中国,200072
- 作者简介：
- 基金信息：
  
  国家自然科学基金(0 51072111();50675130)();973(2011CB013100)资助项目()
- DOI：10.3788/fgxb20123302.0210
  中图分类号： TN301
- 收稿日期：2011-11-10，
  
  修回日期：2011-12-01，
  
  网络出版日期：2012-02-10，
  
  纸质出版日期：2012-02-10
- 稿件说明：
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王万晶, 李喜峰, 石继峰, 张建华. ITO界面调制层对GZO电极LED器件性能的影响[J]. 发光学报, 2012,33(2): 210-215

WANG Wan-jing, LI Xi-feng, SHI Ji-feng, ZHANG Jian-hua. Effect of ITO Interface Modulation Layer on The Performances of LEDs with Ga-doped ZnO Electrode[J]. Chinese Journal of Luminescence, 2012,33(2): 210-215
王万晶, 李喜峰, 石继峰, 张建华. ITO界面调制层对GZO电极LED器件性能的影响[J]. 发光学报, 2012,33(2): 210-215 DOI： 10.3788/fgxb20123302.0210.

WANG Wan-jing, LI Xi-feng, SHI Ji-feng, ZHANG Jian-hua. Effect of ITO Interface Modulation Layer on The Performances of LEDs with Ga-doped ZnO Electrode[J]. Chinese Journal of Luminescence, 2012,33(2): 210-215 DOI： 10.3788/fgxb20123302.0210.

摘要

采用磁控溅射制备GZO和具有ITO界面调控层的GZO(ITO/GZO)透明导电薄膜作为大功率LED的电流扩散层

对比研究界面调控层对LED器件性能的影响。研究结果表明

ITO/GZO薄膜的透过率在可见光区达80%以上

退火后的ITO/GZO薄膜有较低的电阻率(1.1510

-3

cm)。ITO调控层的介入能够调制GZO表面粗糙度

有利于改善LED外量子效率

降低GZO/p-GaN界面的接触势垒

提高LED器件的光电性能。通过ITO界面调控后

LED器件20 mA驱动电流下的工作电压从9.5 V降低为6.8 V

发光强度从245 mcd 升到297 mcd

提高了20%;驱动电流为35 mA时

其发光强度从340.5 mcd 升到511 mcd

提高了50%。

Abstract

Indium-Tin-Oxide(40 nm)/Ga-doped ZnO(140 nm)(ITO/GZO) and GZO(180 nm) films were deposited onto both glass substrates and p-GaN epitaxial layers by magnetron sputtering as transparent current spreading layer of GaN-based LEDs. After thermal annealing in air ambient conditions

the ITO/GZO films exhibite high transparency(~80%) in visible light and low resistivity(1.1510

-3

cm). The roughness of the ITO/GZO films is bigger than that of the GZO films which enhances the extraction of photons. The ITO interface modulation layer can reduce the contact barrier of GZO/p-GaN and improve the photoeletric performance of LEDs. GaN-based light-emitting diodes(LEDs) were also fabricated. With 20 mA injection current

it is found that the forward voltage are 6.8 V and 9.5 V

while the luminous intensity are 297 mcd and 245 mcd

respectively for the LEDs with ITO/GZO electrode and GZO electrode. Compared the LEDs with GZO electrodes

the luminous intensity of LEDs with ITO/GZO electrode increased by 20% at 20 mA forward current and increased by 50% at 35 mA forward current.

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references

Schubert E F. Light-emitting Diodes [M]. 2nd edition. Cambridge, U.K.: Cambridge Univ. Press, 2006:185-186.[2] Zhou Z, Feng S W, Zhang G C, et al. The aging characteristics of high-powder GaN-based white light-emitting diodes [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1046-1050 (in Chinese).[3] Zhong G M, Du X Q, Tian J. Simulation and analysis of light extraction efficiency of GaN-based flip-chip light-emitting diodes [J]. Chin. J. Lumin.(发光学报), 2011, 32(8):773-778 (in Chinese).[4] Jia W Q, Fan B F, Jiang H, et al. High power GaN-based LEDs with nano-structured Ga-doped ZnO(GZO) transparent conductive layer(TCL) [J]. SPIE-OSA-IEEE, 2011, 7991:799105-1-8.[5] Minami T. Present status of transparent conducting oxide thin film development for indium-tin-oxide(ITO) substitutes [J]. Thin Solid Films, 2008, 516(17):5822-5828.[6] Song J O, Kim K K, Park S J, et al. Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN [J]. Appl. Phys. Lett., 2003, 83(3):479-481.[7] Sheu J K, Lu Y S, Lee M L, et al. Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer [J]. Appl. Phys. Lett., 2007, 90(26):263511-1-3.[8] Minami T, Nanto H, Takata S. Highly conductive and transparent zinc oxide films prepared by RF magnetron sputtering under an applied external magnetic field [J]. Appl. Phys. Lett., 1982, 41(2):958-961.[9] Song J O, Ha J S, Seong T Y. Ohmic-contact technology for GaN-based light-emitting diodes: Role of p-type contact [J]. Transactions on Electron Devices, 2010, 57(1):42-59.[10] Dai H L. The Technical Optimization and Study of Optical Properties of ZnO Thin Films Prepared by Sol-gel Technique . Xi'an: Northwest University, 2006:8.[11] Sheu J K, Lu Y S, Lee M L, et al. Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer [J]. Appl. Phys. Lett., 2007, 90(26):263511-1-3.[12] Liu S Y, Chen T, Jiang Y L, et al. Improvement of the crystallinity and optical properties of sol-gel ZnO thin film by a PVD ZnO buffer layer //9th ICSICT., Beijing, China: IEEE, 2008:738-741.[13] Wang S F, Li X F, Zhang J H. Effects of surface and chemical treatment and annealing on p-GaN/ZnO∶Ga contact [J]. Chin. J. Lumin.(发光学报), 2010, 31(6):848-853 (in Chinese).[14] Pan S M, Tu R C, Fan Y M, et al. Characteristics of p-type contact on GaN-based light emitting devices [J]. IEEE Photon. Technol. Lett., 2003, 15:646-648.[15] Song J O, Kim K K, Park S J, et al. Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN [J]. Appl. Phys. Lett., 2003, 83(1):479-482.[16] Sheu J K, Lee M L, Lu Y S, et al. Ga-doped ZnO transparent conductive oxide films applied to GaN-based light-emitting diodes for improving light extraction efficiency [J]. Journal of Quantum Electronics, 2008, 44(11-12):1211-1218.[17] Lee G H, Yamamoto Y, Kourogi M, et al. Blue shift in room temperature photoluminescence from photo-chemical vapor deposited ZnO films [J]. Thin Solid Films, 2001, 386(1):117-120.[18] Klingshirn C F. Semiconductor Optics [M]. Berlin, Germany: Springer, 1995:171.[19] Djaoued Y, Phong V H, Badilescu S, et al. Sol-gel-prepared ITO films for electrochromic systems [J]. Thin Solid Films, 1997, 293(1-2):108-112.[20] Byung D A, Sang H O, Choong H L, et al. Influence of thermal annealing ambient on Ga-doped ZnO thin films thickness and orientation of solution-grown silicon nanowires [J]. Science, 2000, 287:1471-1473.[21] Sheu J K, Tsai C M, Lee M L, et al. InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface [J]. Appl. Phys. Lett., 2006, 88(11):3505-3507.[22] Leem D S, Lee T, Seong T Y. Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching [J]. Solid-State Electronics, 2007, 51(5):793-796.[23] Byung D A, Sang H O, Choong H L, et al. Influence of thermal annealing ambient on Ga-doped ZnO thin films [J]. J. Crystal Growth, 2007, 309(2):128-133.[24] Lim J H, Park S J. Transparent phosphorus doped ZnO ohmic contact to GaN based LED [J]. Office of Scientific and Technical Information, 2009, 19(8):417-420.[25] Reeves G K, Harrison H B. Obtaining the specific contact resistance from transmission line model measurements [J]. Electron Dev. Lett., 1982, 12(3):111-113.

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