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发光与光信息教育部重点实验室 北京交通大学光电子技术研究所 北京,100044
收稿日期:2011-10-14,
修回日期:2011-11-24,
网络出版日期:2012-02-10,
纸质出版日期:2012-02-10
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赵凡凡, 梁春军, 何志群. 全湿法制备聚合物电致发光器件[J]. 发光学报, 2012,33(2): 206-209
ZHAO Fan-fan, LIANG Chun-jun, HE Zhi-qun. Fabrication of Polymer Light-emitting Diodes Using All-solution Method[J]. Chinese Journal of Luminescence, 2012,33(2): 206-209
赵凡凡, 梁春军, 何志群. 全湿法制备聚合物电致发光器件[J]. 发光学报, 2012,33(2): 206-209 DOI: 10.3788/fgxb20123302.0206.
ZHAO Fan-fan, LIANG Chun-jun, HE Zhi-qun. Fabrication of Polymer Light-emitting Diodes Using All-solution Method[J]. Chinese Journal of Luminescence, 2012,33(2): 206-209 DOI: 10.3788/fgxb20123302.0206.
利用全溶液方法制备了聚合物电致发光器件并研究了器件的性能。器件的所有膜层
包括发光层和上电极层均采用溶液湿法获得
完全摒弃了真空蒸镀工艺。利用二次溶剂掺杂获得的PEDOT∶PSS聚合物薄膜的电导率达到608.7 S/cm。在240 nm的厚度时
聚合物电极膜层的面电阻约为68 /□; 当膜层厚度为1 m时
薄膜的面电阻可低于16 /□。采用溶液滴涂方法制备的高电导PEDOT∶PSS聚合物薄膜作为上电极替代通常所用的铝电极
所制备的聚合物发光器件的开启电压约为4 V。
All-solution method is used to fabricate polymer light-emitting diodes(PLEDs). The electron injection buffer layer and the light-emitting polymer layer are obtained by spin coating. As for the top electrode
we use drop-casted highly conductive PEDOT∶PSS film as transparent anode layer to obtain a high device performance. The conductivity of 608.7 S/cm for the PEDOT∶PSS film is achieved by secondary doping. At the thickness of 240 nm
the sheet resistance of the polymer layer is 68 /□
and at 1 micron
the sheet resistance of the film is less than 10 /□.
I-V
characteristics of the devices show a threshold voltage of ~ 4 V under forward bias.
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