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1. 上海大学材料科学与工程学院 高分子材料系 上海,200072
2. 上海大学材料科学与工程学院 材料研究所 上海,200072
收稿日期:2011-11-04,
修回日期:2011-11-24,
网络出版日期:2012-02-10,
纸质出版日期:2012-02-10
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贺英, 潘照东, 张瑶斐, 朱棣, 陈杰, 王均安. 聚苯胺/ZnO纳米线薄膜材料作为发光层的柔性光电器件 及其发光机理[J]. 发光学报, 2012,33(2): 201-205
HE Ying, PAN Zhao-dong, ZHANG Yao-fei, ZHU Di, CHEN Jie, WANG Jun-an. Photo- and Electro-luminescence of PANI/ZnO Nanowire Film for Light-emitting Layer of Flexible Optoelectronic Devices[J]. Chinese Journal of Luminescence, 2012,33(2): 201-205
贺英, 潘照东, 张瑶斐, 朱棣, 陈杰, 王均安. 聚苯胺/ZnO纳米线薄膜材料作为发光层的柔性光电器件 及其发光机理[J]. 发光学报, 2012,33(2): 201-205 DOI: 10.3788/fgxb20123302.0201.
HE Ying, PAN Zhao-dong, ZHANG Yao-fei, ZHU Di, CHEN Jie, WANG Jun-an. Photo- and Electro-luminescence of PANI/ZnO Nanowire Film for Light-emitting Layer of Flexible Optoelectronic Devices[J]. Chinese Journal of Luminescence, 2012,33(2): 201-205 DOI: 10.3788/fgxb20123302.0201.
综合氧化锌纳米线(ZnO NWs)的光学活性与聚苯胺(PANI)的空穴传输特性
设计并制备了一种聚合物/ZnO纳米线电致发光材料
并对其发光特性进行了研究。通过高分子络合软模板法
将有序的单晶ZnO NWs均匀生长在覆有铟锡氧化物(ITO)涂层的柔性聚乙烯对苯二甲酸乙二醇酯(PET)衬底上并嵌入PANI薄膜
获得了电致发光薄膜材料和有机/无机异质结实验器件ITO/(ZnO NWs-PANI)。有机/无机异质结器件电致发光可调
在相对低的开启电压下呈现室温蓝紫外发光
并且ZnO NWs表面覆盖PANI增加了蓝紫外发光的强度和稳定性;而无PANI的ZnO NWs阵列具有450 nm处的缺陷发射峰
这可能是电子从扩展态锌间隙Zn
i
到价带的跃迁引起的。这些结果表明
基于PANI/ZnO纳米线的复合材料在柔性光电器件方面的应用极具潜力。
ith the combination of optical activity of ZnO nanowires and the hole-transporting characteristics of polyaniline(PANI)
a flexible light-emitting diode based on PANI /ZnO nanowire film was designed and prepared
and luminescence properties were discussed. By our simple polymer-assisted growth method
the ordered single-crystalline ZnO nanowires were uniformly distributed on flexible polyethylene terephthalate(PET)-based indium-tin-oxide-coated substrates.The array of ZnO nanowires grown on PET substrate was successfully embedded in a polyaniline thin film
through which a PANI/ZnO nanowire film and a hybrid device of organic-inorganic hetero-junction of ITO/(ZnO nanowires-PANI) were obtained. The photo- and electroluminescence results show that the hybrid device of organic-inorganic hetero-junction is of tunable electroluminescence and emits ultraviolet at relatively low turn-on voltage; surface capping with PANI on ZnO nanowires enhances ultraviolet emission and reduces defect-related emission at 450 nm of bare ZnO nanowire array
which is attributed to electron transitions from the extended state Zn
i
to the valance band. The results also indicate that PANI/ZnO nanowire film has a great potential for application in flexible optoelectronic devices.
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