ZnSe(ZnS)纳米晶与MEH-PPV的共掺有机电致发光器件

殷月红; 邓振波; 伦建超; 吕昭月; 杜海亮; 王永生

doi:10.3788/fgxb20123302.0171

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ZnSe(ZnS)纳米晶与MEH-PPV的共掺有机电致发光器件

器件制备及器件物理 | 更新时间：2020-08-12

- ZnSe(ZnS)纳米晶与MEH-PPV的共掺有机电致发光器件
- Organic Electroluminescence of ZnSe/ZnS Nanocrystal Hybrid with MEH-PPV
- 发光学报 2012年33卷第2期页码：171-175
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室北京,100044
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60977027)();北京交通大学优秀博士研究生创新研究基金(2011YJS280)资助项目()
- DOI：10.3788/fgxb20123302.0171
  中图分类号： TN383+.1
- 收稿日期：2011-08-25，
  
  修回日期：2011-10-24，
  
  网络出版日期：2012-02-10，
  
  纸质出版日期：2012-02-10
- 稿件说明：
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殷月红, 邓振波, 伦建超, 吕昭月, 杜海亮, 王永生. ZnSe(ZnS)纳米晶与MEH-PPV的共掺有机电致发光器件[J]. 发光学报, 2012,33(2): 171-175

YIN Yue-hong, DENG Zhen-bo, LUN Jian-chao, LV Zhao-yue, DU Hai-liang, WANG Yong-sheng. Organic Electroluminescence of ZnSe/ZnS Nanocrystal Hybrid with MEH-PPV[J]. Chinese Journal of Luminescence, 2012,33(2): 171-175
殷月红, 邓振波, 伦建超, 吕昭月, 杜海亮, 王永生. ZnSe(ZnS)纳米晶与MEH-PPV的共掺有机电致发光器件[J]. 发光学报, 2012,33(2): 171-175 DOI： 10.3788/fgxb20123302.0171.

YIN Yue-hong, DENG Zhen-bo, LUN Jian-chao, LV Zhao-yue, DU Hai-liang, WANG Yong-sheng. Organic Electroluminescence of ZnSe/ZnS Nanocrystal Hybrid with MEH-PPV[J]. Chinese Journal of Luminescence, 2012,33(2): 171-175 DOI： 10.3788/fgxb20123302.0171.

摘要

采用水相法合成核壳结构ZnSe/ZnS 纳米晶

经X射线衍射(XRD)分析和透射电子显微镜(TEM)表征

证实所制备的样品为立方晶型闪锌矿结构ZnSe/ZnS量子点。按照一定的质量比将ZnSe/ZnS 纳米晶和有机聚合物MEH-PPV(poly ) 共掺并将其作为发光层

分别制备单层和多层有机电致发光器件

结构为ITO/MEH-PPV∶ZnSe(ZnS)(50 nm)/Al和 ITO/PEDOT∶PSS(70 nm)/ MEH-PPV∶ZnSe(ZnS)(50 nm)/BCP(15 nm)/Alq

(12 nm) /LiF(0.5 nm)/Al。实验结果表明

多层发光器件的发光特性与单层器件不同

工作电压的增大使其发光峰发生了明显的蓝移。

Abstract

Core-shell structure ZnSe/ZnS nanocrystal(NCs) with size of about 4 nm was synthesized in aqueous solution

Good cubic crystal with zinc-blend structure of ZnSe/ZnS NCs was confirmed by using X-ray diffraction(XRD) and transmission electron microscopy(TEM) technology. A surfactant was replaced of ZnSe/ZnS NCs to transfer from aqueous solution to organic solution

which have been great dispersed in organic polymer. Organic light emitting devices were fabricated using a thin film which was spin-coated the MEH-PPV and ZnSe/ZnS NCs mixer solution under the quality ratio of 1∶0.5 as the emitting layer. The electroluminescence(EL) diodes with single-layer structure of ITO/poly [2-methoxy-5-(2'-ethyl hexyloxy-p-phenylenevinylene)](MEH-PPV)∶ZnSe/ZnS(50 nm)/Al and a multilayer structure of ITO/poly(ethylene- dioxythio phene)∶poly(styrenesulfonate)(PEDOT∶PSS)(70 nm)/MEH-PPV∶ZnSe(ZnS)(50 nm)/bathocuproine(BCP)(15 nm)/tris-(8-hydroxylquinoline)-aluminum(Alq

)(12 nm)/LiF(0.5 nm)/Al were fabricated

respectively. The clearly blue shift of the emissive peak in the multilayer device was measured with the increasing of applied voltage

but there is not the changing of the emissive peak in the single-layer device. Under the effect of applied voltage and the hole blocking layer BCP

EL of multilayer device may be from MEH-PPV and ZnSe/ZnS NCs.

关键词

Keywords

references

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