电沉积法制备ZnO纳米柱及其机制研究

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电沉积法制备ZnO纳米柱及其机制研究

材料合成及性能研究 | 更新时间：2020-08-12

- 电沉积法制备ZnO纳米柱及其机制研究
- Fabrication and Growth Mechanism of ZnO Nanorods by Electrochemical Method
- 发光学报 2012年33卷第2期页码：128-134
- 作者机构：
  
  哈尔滨工业大学材料科学与工程学院光电信息与量子器件系,黑龙江哈尔滨,150001
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123302.0128
  中图分类号： O472
- 收稿日期：2011-11-23，
  
  修回日期：2011-12-17，
  
  网络出版日期：2012-02-10，
  
  纸质出版日期：2012-02-10
- 稿件说明：
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孙素娟, 矫淑杰, 高世勇, 王东博, 王金忠. 电沉积法制备ZnO纳米柱及其机制研究[J]. 发光学报, 2012,33(2): 128-134

SUN Su-juan, JIAO Shu-jie, GAO Shi-yong, WANG Dong-bo, WANG Jin-zhong. Fabrication and Growth Mechanism of ZnO Nanorods by Electrochemical Method[J]. Chinese Journal of Luminescence, 2012,33(2): 128-134
孙素娟, 矫淑杰, 高世勇, 王东博, 王金忠. 电沉积法制备ZnO纳米柱及其机制研究[J]. 发光学报, 2012,33(2): 128-134 DOI： 10.3788/fgxb20123302.0128.

SUN Su-juan, JIAO Shu-jie, GAO Shi-yong, WANG Dong-bo, WANG Jin-zhong. Fabrication and Growth Mechanism of ZnO Nanorods by Electrochemical Method[J]. Chinese Journal of Luminescence, 2012,33(2): 128-134 DOI： 10.3788/fgxb20123302.0128.

摘要

采用阴极还原方法

以Zn(NO

3

)

2

水溶液为电解液制备ZnO纳米柱。分析了不同沉积电位和不同沉积时间的缓冲层对ZnO纳米柱的密度、形貌及取向的影响。通过分析缓冲层在不同沉积时间下的电流密度变化

研究了缓冲层对ZnO纳米柱密度影响的机理。利用扫描电子显微镜(SEM)和X射线衍射(XRD)分析了样品的表面形貌及结构。研究结果表明

缓冲层能够增加ZnO纳米柱的密度及

c

轴的取向性

当缓冲层的沉积时间为60 s时

可以得到密度最大、取向最好的ZnO纳米柱。

Abstract

ZnO nanorods arrays were prepared by cathodic electrochemical deposition method

in which ITO-coated glass substrate were used as a cathode. The electrolyte consisted of an aqueous solution of Zn(NO

3

)

2

6H

2

O with the concentration of 0.01 molL

-1

and KCl supporting electrolyte with the concentration of 0.1 molL

-1

were used for the depositing. The influences of depostion potential and buffer layer on the preferred orientation and density of the ZnO nanorods were investigated by scanning electron microscope (SEM) and X-ray diffraction (XRD). A significant variation of density and orientation of ZnO nanorod arrays were obtained by changing the deposition time of buffer layer. Pre-deposition ZnO buffer layer relieved the lattice mismatch between ZnO and ITO substrate

and also provided the nuclei centers for the ZnO nanorods. SEM and XRD data showed that ZnO nanorods with the highest density and best

c

-axis orientation can be achieved by pre-depositing a buffer layer at applied potential of -1.10 V and last for 60 s.

关键词

Keywords

references

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