(Cu,Al)掺杂ZnO薄膜表面处缺陷的拉曼光谱研究

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(Cu,Al)掺杂ZnO薄膜表面处缺陷的拉曼光谱研究

光谱分析 | 更新时间：2020-08-12

- (Cu,Al)掺杂ZnO薄膜表面处缺陷的拉曼光谱研究
- Defect Study at The Surface of (Cu,Al)-doped ZnO Thin Film by Raman Spectra
- 发光学报 2012年33卷第1期页码：109-113
- 作者机构：
  
  1. 中国科学院上海硅酸盐研究所, 上海 200050
  2. 中国科学院研究生院, 北京 100039
- 作者简介：
- 基金信息：
  
  国家自然科学基金青年基金(51002176)();中国科学院上海硅酸盐研究所创新基金资助项目()
- DOI：10.3788/fgxb20123301.0109
  中图分类号： O472.5
- 收稿日期：2011-10-20，
  
  修回日期：2011-11-07，
  
  网络出版日期：2012-01-10，
  
  纸质出版日期：2012-01-10
- 稿件说明：
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卓世异, 刘学超, 熊泽, 杨建华, 施尔畏. (Cu,Al)掺杂ZnO薄膜表面处缺陷的拉曼光谱研究[J]. 发光学报, 2012,33(1): 109-113

ZHUO Shi-yi, LIU Xue-chao, XIONG Ze, YANG Jian-hua, SHI Er-wei. Defect Study at The Surface of (Cu,Al)-doped ZnO Thin Film by Raman Spectra[J]. 发光学报, 2012,33(1): 109-113
卓世异, 刘学超, 熊泽, 杨建华, 施尔畏. (Cu,Al)掺杂ZnO薄膜表面处缺陷的拉曼光谱研究[J]. 发光学报, 2012,33(1): 109-113 DOI： 10.3788/fgxb20123301.0109.

ZHUO Shi-yi, LIU Xue-chao, XIONG Ze, YANG Jian-hua, SHI Er-wei. Defect Study at The Surface of (Cu,Al)-doped ZnO Thin Film by Raman Spectra[J]. 发光学报, 2012,33(1): 109-113 DOI： 10.3788/fgxb20123301.0109.

摘要

采用电感耦合等离子体增强物理气相沉积法制备了(Cu

Al)掺杂ZnO薄膜

超导量子干涉磁强计测试结果表明

薄膜具有室温的铁磁性。采用激光共聚焦拉曼(Raman)光谱研究了(Cu

Al)掺杂ZnO薄膜的表面特性

以两种处理方式对薄膜进行了Raman光谱测试:共聚焦模式从薄膜表面开始至不同深度处进行测试;对薄膜样品进行预处理加工

采用面扫描模式在薄膜平面对(Cu

Al)掺杂ZnO薄膜的斜面进行测试。分析了Raman光谱A

1

(LO)峰的中心位置和强度变化

结果表明

界面处晶格应力和缺陷明显增强。这些晶格畸变和点缺陷的存在会对体系的铁磁性有促进作用。

Abstract

(Cu

Al)-doped ZnO thin films were deposited by an inductively coupled plasma enhanced physical vapor deposition system. The magnetic properties were measured by a superconducting quantum interference device magnetometer

and room-temperature ferromagnetism was observed in the (Cu

Al)-doped ZnO thin films. The surface characteristics of (Cu

Al)-doped ZnO thin films were studied by confocal Raman spectroscopy. Two different Raman spectra were performed: A confocal Raman measurement was used to characterize the defects at the surface and interface by focusing at different depths; A mapping mode was performed along a slope which was processed by a mask. The central position and the intensity of A

1

(LO) resonance peak were analyzed. The results indicate that the lattice stress and defects at the interface were obvious

while these lattice stress and defects at the interface will enhance the ferromagnetic properties of (Cu

Al)-doped ZnO thin films.

关键词

Keywords

references

Zhao Q X, Klason P, Willander M, et al. Deep-level emissions influenced by O and Zn implantations in ZnO [J]. Appl. Phys. Lett., 2005, 87(21):211912-1-3.[2] Xing G, Xing G, Li M, et al. Charge transfer dynamics in Cu-doped ZnO nanowires [J]. Appl. Phys. Lett., 2011, 98(10):102105-1-3.[3] Herng T S, Lau S P, Yu S F, et al. Origin of room temperature ferromagnetism in ZnO∶Cu films [J]. J. Appl. Phys., 2006, 99(8):086101-1-3.[4] Li X L, Xu X H, Quan Z Y, et al. Role of donor defects in enhancing ferromagnetism of Cu-doped ZnO films [J]. J. Appl. Phys., 2009, 105(10):103914-1-6.[5] Hu Y M, Li S S, Chia C H. Correlation between saturation magnetization and surface morphological features in Zn1-xCrxO thin films [J]. Appl. Phys. Lett., 2011, 98(5):052503-1-3.[6] Schoenhalz A L, Arantes J T, Fazzio A, et al. Surface magnetization in non-doped ZnO nanostructures [J]. Appl. Phys. Lett., 2009, 94(16):162503-1-3.[7] Chakraborti D, Trichy G R, Prater J T, et al. The effect of oxygen annealing on ZnO∶Cu and ZnO∶(Cu,Al) diluted magnetic semiconductors [J]. J. Phys. D: Appl. Phys., 2007, 40(24):7606-7613.[8] Venkatesan M, Stamenov P, Dorneles L S, et al. Magnetic, magnetotransport, and optical properties of Al-doped Zn0.95Co0.05O thin films [J]. Appl. Phys. Lett., 2007, 90(24):242508-1-3.[9] Chakraborti D, Trichy G, Narayan J, et al. Effect of Al doping on the magnetic and electrical properties of Zn(Cu)O based diluted magnetic semiconductors [J]. J. Appl. Phys., 2007, 102(11):113908-1-7.[10] Zang H, Wang Z G, Pang L H, et al. Raman investigation of ion-implanted ZnO films [J]. Acta Phys. Sin-ched, 2010, 59(07):4831-4836.[11] Cusco R, Alarcon-Llado E, Ibanez J, et al. Temperature dependence of Raman scattering in ZnO [J]. Phys. Rev. B, 2007, 75(16):165202-1-11.[12] Duan L B, Rao G H, Wang Y C, et al. Magnetization and Raman scattering studies of (Co,Mn) codoped ZnO nanoparticles [J]. J. Appl. Phys., 2008, 104(1):013909-1-5.[13] Coey J M D, Venkatesan M, Fitzgerald C B. Donor impurity band exchange in dilute ferromagnetic oxides [J]. Nat. Mater., 2005, 4(2):173-179.[14] Chen S J, Suzuki K, Garitaonandia J S. Room temperature ferromagnetism in nanostructured ZnO-Al system [J]. Appl. Phys. Lett., 2009, 95(17):172507-1-3.[15] Avrutin V, Izyumskaya N, Ozgur U, et al. Ferromagnetism in ZnO- and GaN-based diluted magnetic semiconductors: achievements and challenges [J]. Proceedings of the IEEE, 2010, 98(7):1288-1301.

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