LiF超薄层引起的OLEDs发光光谱展宽

肖静; 邓振波; 谭静芳; 杨兆华

doi:10.3788/fgxb20123301.0072

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LiF超薄层引起的OLEDs发光光谱展宽

器件制备及器件物理 | 更新时间：2020-08-12

- LiF超薄层引起的OLEDs发光光谱展宽
- A Novel Spectrum Expanding Phenomenon Based on Inserting LiF Layer in Emitting Layer in OLEDs
- 发光学报 2012年33卷第1期页码：72-76
- 作者机构：
  
  1. 泰山学院物理与电子工程学院, 山东泰安 271021
  2. 北京交通大学光电子技术研究所, 北京 100044
- 作者简介：
- 基金信息：
  
  山东省自然科学基金(ZR2010 FQ006)();山东省科技计划项目(J08LI65)();泰山学院科学基金(Y07-2-03)资助项目()
- DOI：10.3788/fgxb20123301.0072
  中图分类号： TN383+.1
- 收稿日期：2011-06-23，
  
  修回日期：2011-11-15，
  
  网络出版日期：2012-01-10，
  
  纸质出版日期：2012-01-10
- 稿件说明：
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肖静, 邓振波, 谭静芳, 杨兆华. LiF超薄层引起的OLEDs发光光谱展宽[J]. 发光学报, 2012,33(1): 72-76

XIAO Jing, DENG Zhen-bo, TAN Jing-fang, YANG Zhao-hua. A Novel Spectrum Expanding Phenomenon Based on Inserting LiF Layer in Emitting Layer in OLEDs[J]. 发光学报, 2012,33(1): 72-76
肖静, 邓振波, 谭静芳, 杨兆华. LiF超薄层引起的OLEDs发光光谱展宽[J]. 发光学报, 2012,33(1): 72-76 DOI： 10.3788/fgxb20123301.0072.

XIAO Jing, DENG Zhen-bo, TAN Jing-fang, YANG Zhao-hua. A Novel Spectrum Expanding Phenomenon Based on Inserting LiF Layer in Emitting Layer in OLEDs[J]. 发光学报, 2012,33(1): 72-76 DOI： 10.3788/fgxb20123301.0072.

摘要

将LiF插入到发光层Alq

中

制备了有机电致发光器件(OLED)

其器件的结构为:ITO/NPB (45 nm)/Alq

(

nm)/LiF (0.3 nm)/Alq

/Al(150 nm)。发现器件的电致发光谱(Electroluminescence spectra

EL)有非常明显的展宽现象

这为白光器件的制备提供了一条简单的途径。通过对比LiF在Alq

中不同厚度处的发光谱

发现在

=10时谱线展宽最显著

器件最大亮度在22 V时达到8 260 cd/m

最大效率可达 4.83 cd/A

并对其光谱展宽的机理及器件特性进行了分析。

Abstract

A novel organic electroluminescent device was fabricated by interposing a thin LiF layer in Alq

layer in this work. The structure of the device is ITO/NPB (45 nm)/Alq

(

nm)/LiF (0.3 nm)/Alq

/Al (150 nm). All the devices

15) showed expanded EL spectra

and the spectrum expanding is more obvious in the device with

=10 than the others. The highest brightness of this device reached 8 260 cd/m

at a fixed bias of 22 V. The spectra contain tricolor

so this is a simple method to realize white light emitting. We also elucidated the mechanism for expanded EL spectra and investigated the properties of these devices.

关键词

Keywords

references

Adachi C, Tsutsui T, Saito S. Organic electroluminescent device having a hole conductor as an emitting layer [J]. Appl. Phys. Lett., 1989, 55(15):1489-1491.[2] Burroughes J H, Bradley D D C, Brown A R, et al. Light-emitting diodes based on conjugated polymers [J]. Nature, 1990, 347(11):539-541.[3] Prache O. Active matrix molecular OLED microdisplays [J]. Displays, 2001, 22(1):49-56.[4] Beierlein T A, Ott H P, Riel H, et al. Combinatorial device fabrication and optimization of multilayer organic LEDs [J]. SPIE, 2002, 4464:178-186.[5] Hou L T, Liu P Y, Zhang J L, et al. Improved hole-injection contact by employing an ultra-thin MoO3 carrier injection layer [J]. Chin. J. Lumin. (发光学报), 2010, 31(6):326-330 (in Chinese).[6] Huang Y S, Jou J H, Weng W K, et al. High-efficiency white organic light-emitting devices with dual doped structure [J]. Appl. Phys. Lett., 2002, 80(15):2782-2784.[7] Zheng X Y, Zhu W Q, Wu Y Z, et al. A white OLED based on DPVBi blue light emitting host and DCJTB red dopant [J]. Displays, 2003, 24(3):121-124.[8] Xiao J, Deng Z B, Liang C J, et al. An efficient and bright organic white-light-emitting device [J]. Displays, 2005, 26 (3):129-132.[9] Sun Y, Forrest S R. High-efficiency white organic light emitting devices with three separate phosphorescent emission layers [J]. Appl. Phys. Lett., 2007, 91(26):263503-1-3.[10] Kanno H, Giebink N C, Sun Y, et al. Stacked white organic light-emitting devices based on a combination of fluorescent and phosphorescent emitters [J]. Appl. Phys. Lett., 2006, 89(2):023503-1-3.[11] Kanno H, Sun Y, Forrest S R. White organic light-emitting device based on a compound fluorescent-phosphor- sensitized-flurecent emission layer [J]. Appl. Phys. Lett., 2006, 89(14):143516-1-3.[12] Lee T W, Noh T, Choi B K, et al. High-efficiency stacked white organic light-emitting diodes [J]. Appl. Phys. Lett., 2008, 92(4):043301-1-3.[13] Sebastian R, Frank L, Gregor S, et al. White organic light-emitting diodes with fluorescent tube efficiency [J]. Nature, 2009, 459:234-238.[14] Tian M M, Fan Y, Gao J, et al. Electroplex in organic light-emitting diodes [J]. Chin. J. Lumin. (发光学报), 2010, 31(3):779-783 (in Chinese).[15] Xiao J, Deng Z B, Liang C J. Effect of LiF buffer layer on the performance of organic electroluminescent devices [J]. Physica E, 2005, 28(1-2):323-327.[16] Zhang Z F, Deng Z B, Liang C J, et al. A novel buffer layer of Alq3 in organic electroluminescent devices [J]. Chin. Phys. Lett. (中国物理快报), 2004, 21(6):1150-1152 (in Chinese).[17] Itano K, Ogawa H, Shirota Y. Exciplex formation at the organic solid-state interface: Yellow emission in organic light-emitting diodes using green-fluorescent tris(8-quinolinolato)aluminum and hole-transporting molecular materials with low ionization potentials [J]. Appl. Phys. Lett., 1998, 72(6):636-638.

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