Al3+对Ge/Al-SiO2薄膜光致发光的影响

陈虎; 王加贤

doi:10.3788/fgxb20123301.0032

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Al³⁺对Ge/Al-SiO₂薄膜光致发光的影响

材料合成及性能研究 | 更新时间：2020-08-12

- Al³⁺对Ge/Al-SiO₂薄膜光致发光的影响
- Influence of Al³⁺ on The Photoluminescence of Ge/Al-SiO₂ Films
- 发光学报 2012年33卷第1期页码：32-35
- 作者机构：
  
  华侨大学信息科学与工程学院, 福建厦门 361021
- 作者简介：
- 基金信息：
  
  福建省自然科学基金(2009J01291)资助项目()
- DOI：10.3788/fgxb20123301.0032
  中图分类号： O482.31
- 收稿日期：2011-09-27，
  
  修回日期：2011-10-19，
  
  网络出版日期：2012-01-10，
  
  纸质出版日期：2012-01-10
- 稿件说明：
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陈虎, 王加贤. Al3+对Ge/Al-SiO2薄膜光致发光的影响[J]. 发光学报, 2012,33(1): 32-35

CHEN Hu, WANG Jia-xian. Influence of Al3+ on The Photoluminescence of Ge/Al-SiO2 Films[J]. 发光学报, 2012,33(1): 32-35
陈虎, 王加贤. Al3+对Ge/Al-SiO2薄膜光致发光的影响[J]. 发光学报, 2012,33(1): 32-35 DOI： 10.3788/fgxb20123301.0032.

CHEN Hu, WANG Jia-xian. Influence of Al3+ on The Photoluminescence of Ge/Al-SiO2 Films[J]. 发光学报, 2012,33(1): 32-35 DOI： 10.3788/fgxb20123301.0032.

摘要

采用磁控溅射及后退火技术制备了不同组份和不同退火温度的Ge、Al共掺SiO

薄膜。通过对样品的X射线光电子能谱(XPS)测试

确定了薄膜的成分和结构特征;同时还测试了样品的光致发光谱(PL谱)

得到了峰值位于420 nm附近的紫光发射峰和峰值位于470 nm的蓝光发射峰。实验结果表明

Al的掺杂不仅可以显著地提高GeNOV中心和SiNOV中心的光发射效率

还可以促进GeNOV缺陷和SiNOV缺陷中心的形成

进而有利于薄膜的光致发光。

Abstract

Different contents of Ge and Al co-doped SiO

films are prepared by RF magnetron sputtering technique and thermal annealing. From XPS spectra determination

we make sure the films contents and structure.Then we also determine the films PL spectra

which exhbit a V-band in around 420 nm beam and a B-band in 470 nm beam.Our experiments suggest that doped Al not improves luminescence efficiency of GeNOV and SiNOV defects centres but is of advantage to the defect centres fabrication.

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references

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