退火处理对ZnO纳米线紫外探测器性能的改善

郭亮; 赵东旭; 张振中; 李炳辉; 张吉英; 申德振

doi:10.3788/fgxb20113208.0844

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退火处理对ZnO纳米线紫外探测器性能的改善

器件制备及器件物理 | 更新时间：2020-08-12

- 退火处理对ZnO纳米线紫外探测器性能的改善
- Effects of Annealing Treatmenton on ZnO Nonowires Used for Utraviotet Detector
- 发光学报 2011年32卷第8期页码：844-847
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  中国科学院知识创新工程重要方向项目(KJCX3. SYW. WOI)资助项目()
- DOI：10.3788/fgxb20113208.0844
  中图分类号： O472.8
- 收稿日期：2011-03-31，
  
  修回日期：2011-05-03，
  
  网络出版日期：2011-08-22，
  
  纸质出版日期：2011-08-22
- 稿件说明：
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郭亮, 赵东旭, 张振中, 李炳辉, 张吉英, 申德振. 退火处理对ZnO纳米线紫外探测器性能的改善[J]. 发光学报, 2011,32(8): 844-847

GUO Liang, ZHAO Dong-xu, ZHANG Zhen-zhong, LI Bing-hui, ZHANG Ji-ying, SHEN De-zhen. Effects of Annealing Treatmenton on ZnO Nonowires Used for Utraviotet Detector[J]. Chinese Journal of Luminescence, 2011,32(8): 844-847
郭亮, 赵东旭, 张振中, 李炳辉, 张吉英, 申德振. 退火处理对ZnO纳米线紫外探测器性能的改善[J]. 发光学报, 2011,32(8): 844-847 DOI： 10.3788/fgxb20113208.0844.

GUO Liang, ZHAO Dong-xu, ZHANG Zhen-zhong, LI Bing-hui, ZHANG Ji-ying, SHEN De-zhen. Effects of Annealing Treatmenton on ZnO Nonowires Used for Utraviotet Detector[J]. Chinese Journal of Luminescence, 2011,32(8): 844-847 DOI： 10.3788/fgxb20113208.0844.

摘要

通过介电泳方法定向排列了ZnO纳米线

制作了自组装有序的纳米线紫外探测器。为了适合在金叉指电极上排列

用水热方法设计生长了超长的ZnO纳米线

并通过700 ℃的热退火处理

使得可利用的表面缺陷增多。通过研究器件的光致发光光谱和光响应

发现光、暗电流比和响应恢复时间有显著提高

并分析了其中可能的机理。

Abstract

ZnO nanowires were assembled on Au interdigital electrodes by dielectrophoresis method and fabricated the nanowires UV detector. In order to assemble the ZnO nanowires on interdigital electrodes

the long ZnO nanowires were grown three times by hydrothermal method. Then

the ZnO nanowires was annealed under 700 ℃

which increased the availability of the surface defects. The photoresponse current ratio and recovery time of the UV detector fabricated with the annealed ZnO nanowires were significantly improved. The possible mechanism was studied by the photoluminescence and photoresponse spectra.

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Keywords

references

Razeghi M, Rogalski A. Semiconductor ultraviolet detectors [J]. J. Appl. Phys., 1996, 79 (10):7433-7473.[2] Liu Y, Gorla C R, L iang S, et al. Ultraviolet detector based on epitaxial ZnO films grown by MOCVD [J]. J. Electronic Mater., 2000, 29 (1):69-74[3] Gao Hui, Deng Hong, Li Yan. ZnO schottky barrier UV photodetector [J]. Chin. J. Lumin. (发光学报), 2005, 26 (1):135-138 (in Chinese).[4] Liu K W, Ma J G, Zhang J Y, et al. Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film [J]. Solid State Electronics, 2007, 51 (5):757-761.[5] Zhao Yanmin, Zhang Jiying, Shan Chongxin, et al. A back-illuminated Au/ZnO/Al Shoottky UV photodetector[J]. Chin. J. Lumin. (发光学报), 2010, 31 (4):527-530 (in Chinese).[6] Li Q H, Gao T, Wang Y G, et al. Adsorption and desorption of oxygen probed from ZnO nanowire films by photocurrent measurements [J]. Appl. Phys. Lett., 2005, 86 (12):123117-1-3.[7] Ahn S E, Lee J S, Kim H, et al. Photoresponse of sol-gel-synthesized ZnO nanorods [J]. Appl. Phys. Lett., 2004, 84 (24):5022-5024.[8] Kind H, Yan H, Messer B, et al. Nanowire ultraviolet photodetectors and optical switches [J]. Advance Material, 2002, 14 (2):158-160.[9] Soci C, Zhang A, Xiang B, et al. ZnO nanowire UV photodetectors with high internal gain [J]. Nano. Lett., 2007, 7 (4):1003-1009.[10] Li Y B, Valle F D, Simonnet M, et al. High-performance UV detector made of ultra-long ZnO bridging nanowires [J]. Nanotechnology, 2009, 20 (4):045501-1-6.[11] Vayssires L. Growth of arrayed nanorods and nanowires of ZnO from aqueous solutions [J]. Advance Material, 2003, 15 (5):464-466.

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