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1. 上海大学 材料科学与工程学院 上海,200444
2. 中国科学院上海硅酸盐研究所 透明与光功能无机材料重点实验室 上海,201800
收稿日期:2011-03-27,
修回日期:2011-06-17,
网络出版日期:2011-08-22,
纸质出版日期:2011-08-22
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俞平胜, 苏良碧, 唐慧丽, 郭鑫, 赵衡煜, 杨秋红, 徐军. 退火处理对W∶Bi<sub>4</sub>Ge<sub>3</sub> O<sub>12</sub>和Bi<sub>12</sub>GeO<sub>20</sub>晶体发光性能的影响[J]. 发光学报, 2011,32(8): 825-829
YU Ping-sheng, SU Liang-bi, TANG Hui-li, GUO Xin, ZHAO Heng-yu, YANG Qiu-hong, XU Jun. Effects of Annealing Treatment on the Photoluminescence Properties of W∶Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12</sub> and Bi<sub>12</sub>GeO<sub>20</sub> Crystals[J]. Chinese Journal of Luminescence, 2011,32(8): 825-829
俞平胜, 苏良碧, 唐慧丽, 郭鑫, 赵衡煜, 杨秋红, 徐军. 退火处理对W∶Bi<sub>4</sub>Ge<sub>3</sub> O<sub>12</sub>和Bi<sub>12</sub>GeO<sub>20</sub>晶体发光性能的影响[J]. 发光学报, 2011,32(8): 825-829 DOI: 10.3788/fgxb20113208.0825.
YU Ping-sheng, SU Liang-bi, TANG Hui-li, GUO Xin, ZHAO Heng-yu, YANG Qiu-hong, XU Jun. Effects of Annealing Treatment on the Photoluminescence Properties of W∶Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12</sub> and Bi<sub>12</sub>GeO<sub>20</sub> Crystals[J]. Chinese Journal of Luminescence, 2011,32(8): 825-829 DOI: 10.3788/fgxb20113208.0825.
通过提拉法制备了W∶Bi
4
Ge
3
O
12
和Bi
12
GeO
20
晶体
测试了晶体的吸收光谱、光致发光谱和发光衰减时间等。W∶Bi
4
Ge
3
O
12
的可见光发光强度比纯Bi
4
Ge
3
O
12
有所增强
而且N
2
中退火处理对W∶Bi
4
Ge
3
O
12
发光有进一步增强作用。Bi
12
GeO
20
在N
2
中退火处理后在745 nm附近有发光峰
其衰减时间为10 s左右。两种晶体退火处理后发光均增强
认为是低价Bi离子发光所致。
W∶Bi
4
Ge
3
O
12
and Bi
12
GeO
20
crystals were prepared by Czochralski(Cz) method. The absorption
photoluminescence (PL) and PL lifetime spectra were investigated. The results revealed the PL intensity of W∶Bi
4
Ge
3
O
12
was stronger than that of Bi
12
GeO
20
and annealing in N
2
can increase the PL intensity of W∶Bi
4
Ge
3
O
12
. Near infrared PL (at about 745 nm) was observed in Bi
12
GeO
20
annealed in N
2
and the lifetime was about 10 s. The mechanisms of luminescence in W∶Bi
4
Ge
3
O
12
and annealed Bi
12
GeO
20
was discussed.
Weber M J, Monchamp R R. Luminescence of Bi4Ge3O12:Spectral and decay properties [J]. J. Appl. Phys., 1973, 44 (12):5495-5499.[2] Nestor O H, Huang C Y. Bismuth germinate:A high-Z gamma-ray and charged particle detector [J]. IEEE Trans. Nucl. Sci., 1975, NS-2:68-72.[3] Marinova V, Petrova D, Lin S H, et al. Optical and holographic properties of Fe+Mn co-doped Bi4Ge3O12 crystals [J]. Opt. Communic., 2008, 281 (1):37-43.[4] Shim J B, Yoshikawa A, Bensalah A, et al. Luminescence, radiation damage, and color center creation in Eu3+-doped Bi4Ge3O12 fiber single crystals [J]. J. Appl. Phys., 2003, 93 (9):5131-5135.[5] Zhang Xiurong, Qi Changhong. Study on the spectral properties of Nd in BGO crystal [J]. Chin. J. Lumin.(发光学报), 1994, 15 (2):158-163 (in Chinese).[6] Yu Pingsheng, Wu Anhua, Su Liangbi, et al. Crystal growth and spectroscopic properties of MoO3 and WO3 doped Bi4Ge3O12 by optical floating zone method [J]. J. Alloys Compd., 2010, 503 :380-383.[7] Bloom D, Mckeever S W S. Trapping of photocarriers in Ga-doped Bi12GeO20 at 80 K [J]. J. Appl. Phys., 1995, 77 (12):6511-6515.[8] Sochava S L, Buse K, Krtzig E. Photoinduced Hall-current measurements in photorefractive sillenites [J]. Phys. Rev. B, 1995, 51 (1):4684-4688.[9] Pauliat G, Roosen G. Photorefractive effect generated in sillenite crystals by picosecond pulses and comparison with the quasi-continuous regime [J]. J. Opt. Soc. Am. B, 1990, 7 (12):2259-2263.[10] Cremades A, Santos M T, Remn A, et al. Cathodoluminescence and photoluminescence in the core region of Bi12GeO20 and Bi12SiO20 crystals [J]. J. Appl. Phys., 1996, 79 (9):7186-7190.[11] Cremades A, Piqueras J, Remn A, et al. Luminescence study of thermal treated and laser irradiated Bi12GeO20 and Bi12SiO20 crystals [J]. J. Appl. Phys., 1998, 83 (12):7948-7952.[12] Itoh M, Katagiri T. Intrinsic luminescence from self-trapped excitons in Bi4Ge3O12 and Bi12GeO20:Decay kinetics and multiplication of electronic excitations [J]. J. Phys. Soc. Jpn., 2010, 79 (7):074717-1-9.[13] Srivastava M. Luminescence of divalent bismuth in M2+BPO5 (M2+=Ba2+ , Sr2+ and Ca2+) [J]. J. Lumin., 1998, 78 (1):239-243.[14] Zhou Peng, Su Liangbi, Li Hongjun, et al. Preparation and near infrared luminescence properties of Bi doped BaF2 crystal [J]. Acta Phys. Sin.(物理学报), 2010, 59 (4):2827-2830 (in Chinese).[15] Peng M, Wondraczek L. Bi2+-doped strontium borates for white light emitting diodes [J]. Opt. Lett., 2009, 34 (19):2885-2887.[16] Blasse G, Meijerink A, Nomes M, et al. Unusual bismuth luminescence in strontium tetraborate [J]. J. Phys. Chem. Solids, 1994, 55 (1):171-174.[17] Itoh M, Katagiri T, Mitani H, et al. Comparative study of excitonic structures and luminescence properties of Bi4Ge3O12 and Bi12GeO20 [J]. Phys. Status Solidi B, 2008, 245 (12):2733-2736.
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