微通道板离子壁垒膜粒子阻透特性的蒙特卡罗模拟

姜德龙; 房立峰; 那延祥; 李野; 田景全

doi:10.3788/fgxb20113208.0816

您当前的位置：

首页 >

文章列表页 >

微通道板离子壁垒膜粒子阻透特性的蒙特卡罗模拟

器件制备及器件物理 | 更新时间：2020-08-12

- 微通道板离子壁垒膜粒子阻透特性的蒙特卡罗模拟
- Monte-Carlo Simulations on The Stopping and Transmittance Characteristics of Particles in The Ion Barrier Film of Microchannel Plate
- 发光学报 2011年32卷第8期页码：816-820
- 作者机构：
  
  1. 长春理工大学理学院,吉林长春,130022
  2. 中国兵器工业第214研究所,安徽蚌埠,233042
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20113208.0816
  中图分类号： TN223
- 收稿日期：2011-04-08，
  
  修回日期：2011-05-26，
  
  网络出版日期：2011-08-22，
  
  纸质出版日期：2011-08-22
- 稿件说明：
移动端阅览
姜德龙, 房立峰, 那延祥, 李野, 田景全. 微通道板离子壁垒膜粒子阻透特性的蒙特卡罗模拟[J]. 发光学报, 2011,32(8): 816-820

JIANG De-long, FANG Li-feng, NA Yan-xiang, LI Ye, TIAN Jing-quan. Monte-Carlo Simulations on The Stopping and Transmittance Characteristics of Particles in The Ion Barrier Film of Microchannel Plate[J]. Chinese Journal of Luminescence, 2011,32(8): 816-820
姜德龙, 房立峰, 那延祥, 李野, 田景全. 微通道板离子壁垒膜粒子阻透特性的蒙特卡罗模拟[J]. 发光学报, 2011,32(8): 816-820 DOI： 10.3788/fgxb20113208.0816.

JIANG De-long, FANG Li-feng, NA Yan-xiang, LI Ye, TIAN Jing-quan. Monte-Carlo Simulations on The Stopping and Transmittance Characteristics of Particles in The Ion Barrier Film of Microchannel Plate[J]. Chinese Journal of Luminescence, 2011,32(8): 816-820 DOI： 10.3788/fgxb20113208.0816.

摘要

在三代微光像管中

微通道板(MCP)输入面上覆盖一层超薄离子壁垒膜(IBF)

目的是保护光电阴极

延长像管使用寿命。为了深入研究离子壁垒膜的特性

本文对Al

和SiO

两种离子壁垒膜的粒子阻透能力进行了蒙特卡罗模拟

结果表明:5 nm厚Al

和SiO

离子壁垒膜的死电压分别为230~240 V和220~230 V之间;输入能量0.24 keV时背散射电子数最高达19%左右; 输入能量0.8 keV时

膜电子透过率为87.16%

SiO

膜为88.12%

电子透过的极限膜厚前者为15 nm

后者为16 nm; 对于输入能量0.26 keV的C

、N

、O

离子

膜的离子阻当率为95%~99%; Al

离子壁垒膜在厚度5 nm时具有较好的电子透过率和较高的离子阻挡率。

Abstract

In the third-generation low-level-light image tube

a super thinner ion barrier film (IBF) was covered on the input surface of microchannel plate (MCP) to protect the photocathode and prolong the operation life of the image tube. In order to further investigate the properties of IBF

a Monte-Carlo simulation on the stopping and transmission characteristics of particles in Al

and SiO

IBFs were conducted. It was found that the dead-voltage was 230~240 V and 220~230 V for Al

and SiO

IBF with the thickness of 5 nm

respectively. The number of the back-scattered electron was as high as 19% for the incident electrons with energy of 0.24 keV. For the incident energy of 0.8 keV

the electron transmittance was 87.16% and 88.12%

and the limited thickness of the IBF was 15 nm and 16nm for Al

and SiO

film

respectively. For C

and O

ions with energy of 0.26 keV

the ion stopping power was 95%~99% for Al

IBF. The Al

IBF showed satisfied electron transmittance and ion stopping power when the thickness of IBF was 5 nm.

关键词

Keywords

references

MJ Iosue, Phoenix A Z. Night vision device and method:U.S., US6198090B1 . 2001.[2] Li Ye, Jiang Delong, Xiang Rong, et al. Technology investigation on SiO2 film for ion-preventive feedback of microchannel plate[J]. Acta Electronica Sinica (电子学报), 2008, 36 (12):2400-2404 (in Chinese) .[3] Timothy W Sinor, Joseph P Estrera. An analysis of electron scattering in thin dielectric films used as ion barriers in generation III image tubes [J]. SPIE, 2003, 4796 :23-32.[4] Jiang Delong, Xiang Rong, Wu Kui, et al. Preparation and characteristics of SiO2 ion-preventive feedback thin film [J]. Chin. J. Lumin. (发光学报), 2008, 29 (6):1096-1100 (in Chinese).[5] Jiang Xinrong. Micro-manufacture Technology [M]. Beijing: Publishing House of Electronics Industry, 1999:161-166 (in Chinese).[6] Jiang Delong, Liu Qingfei, Li Ye, et al. MCP ion barrier film and its stopping function on incident ions[J]. Chin. J. Lumin. (发光学报), 2006, 27 (6):1015-1020 (in Chinese).[7] U Littmark, J F Ziegler. Ranges of energetic ions in matter [J]. Phys. Rev. A, 1981, 23 (1):64-72.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

微通道板离子壁垒膜及其对入射离子的阻止作用

蒙特卡罗模拟LED并联电路电流降额特性

SiO₂防离子反馈膜的制备及其性能

微通道板离子壁垒膜及其特性

新型变密度卤化物/MCP反射式X射线敏感薄膜的研究