反应前驱物中n(S)∶n(Cd)对CdS薄膜结构及发光特性的影响

赵湘辉; 魏爱香; 招瑜

doi:10.3788/fgxb20113208.0793

您当前的位置：

首页 >

文章列表页 >

反应前驱物中n(S)∶n(Cd)对CdS薄膜结构及发光特性的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 反应前驱物中n(S)∶n(Cd)对CdS薄膜结构及发光特性的影响
- Influence of n(S) ∶n(Cd) in Precursors on The Structural and Luminescent Properties of CdS Films
- 发光学报 2011年32卷第8期页码：793-797
- 作者机构：
  
  广东工业大学材料与能源学院, 广东广州 510006
- 作者简介：
- 基金信息：
  
  广东省科技计划项目(2008B010800004)资助项目()
- DOI：10.3788/fgxb20113208.0793
  中图分类号： O482.31
- 收稿日期：2011-02-16，
  
  修回日期：2011-04-12，
  
  网络出版日期：2011-08-22，
  
  纸质出版日期：2011-08-22
- 稿件说明：
移动端阅览
赵湘辉, 魏爱香, 招瑜. 反应前驱物中n(S)∶n(Cd)对CdS薄膜结构及发光特性的影响[J]. 发光学报, 2011,32(8): 793-797

ZHAO Xiang-hui, WEI Ai-xiang, ZHAO Yu. Influence of n(S) ∶n(Cd) in Precursors on The Structural and Luminescent Properties of CdS Films[J]. Chinese Journal of Luminescence, 2011,32(8): 793-797
赵湘辉, 魏爱香, 招瑜. 反应前驱物中n(S)∶n(Cd)对CdS薄膜结构及发光特性的影响[J]. 发光学报, 2011,32(8): 793-797 DOI： 10.3788/fgxb20113208.0793.

ZHAO Xiang-hui, WEI Ai-xiang, ZHAO Yu. Influence of n(S) ∶n(Cd) in Precursors on The Structural and Luminescent Properties of CdS Films[J]. Chinese Journal of Luminescence, 2011,32(8): 793-797 DOI： 10.3788/fgxb20113208.0793.

摘要

采用化学水浴以CdCl

O、CS(NH

)

、NH

Cl、NH

O和去离子水作为反应前驱物制备CdS纳米晶薄膜。采用扫描电镜(SEM)、X射线衍射(XRD)、透射光谱和稳态荧光光谱

研究了反应前驱物中不同的

(S) ∶

(Cd)对所制备的CdS薄膜的形貌、结构和光学性能的影响。结果表明:反应前驱物中

(S) ∶

(Cd)3 ∶1时均能制备出由纳米颗粒组成的、具有立方晶系结构的CdS薄膜;CdS薄膜均为富镉的n型半导体

薄膜中的S/Cd原子比约为0.9 ∶1;CdS薄膜的吸收边在450 nm左右

在510~2 500 nm范围内透射率均在70%以上

在500 nm处有一较强的发光峰。

Abstract

CdS thin film was prepared by chemical bath deposition at different

(S) ∶

(Cd) using the precursors of CdCl

CS(NH

)

O and deionized water. The surface morphology

structure and optical properties of all the samples have been analyzed by scanning electron microscopy

X-ray diffraction

transmission and photoluminescence (PL) spectra. The results indicated that spherical particle like morphology and cubic structure CdS thin films were obtained at

(S) ∶

(Cd) greater than or equal 3 ∶1.All CdS thin films with a close stoichiomerty S/Cd=0.91 were Cd-rich belong to n-type semiconductor.The absorption edge of CdS films was about 450 nm

the optical transmittance was more than 70% in the wavelength range from 510 to 2 500 nm.Intensity of the photoluminescence peak at 500 nm is stronger.

关键词

Keywords

references

Xu Leihua, Qiang Yinghuai, Jiang Li. Photoluminescent properties of CdS quantum dots doped in silica xerogel [J]. Chin. J. Lumin. (发光学报), 2011, 32 (3):227-231 (in Chinese).[2] Chaure N B, Bordas S, Samantilleke A P, et al. Investigation of electronic quality of chemical bath deposited cadmium sulphide layers used in thin film photovoltaic solar cells [J]. Thin Solid Films, 2003, 437 (1-2):10-17.[3] Ishiguro T, Morita S. CdS bolometer for detecting heat pulses in a magnetic field [J]. Appl. Phys. Lett., 1974, 25 (10):533-534.[4] Senthil K, Mangalaraj D, Narayandass S K. Structural and optical properties of CdS thin films [J]. Appl. Surf. Sci., 2001, 169-170 :476-479.[5] Green M A, Emery K, Hishikawa Y, et al. Solar cell efficiency tables (version 36) [J]. Prog. Photovolt. Res. Appl., 2010, 18 (5):346-352.[6] Boieriu P, Sporken R, Adriaens A, et al. SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE [J]. Nucl. Instrum. Meth. Phys. Res. Sect. B, 2000, 161-163 :975-979.[7] Nishino J, Chatani S, Uotani Y, et al. Electrodeposition method for controlled formation of CdS films from aqueous solutions [J]. J. Electro Analytical Chemistry, 1999, 473 (1-2):217-222.[8] Li Wenyi, Cai Xun, Chen Qiulong, et al. Influence of growth process on the structural, optical and electrical properties of CBD-CdS films [J]. Materials Lett., 2005, 59 (1):1-5.[9] Gao Xinhui, Liao Yuanbao, Liu Dong, et al. Chemical bath deposition and optical properties of CdS nanocrystalline films with tunable electronic band gap [J]. Chin. J. Lumin. (发光学报), 2008, 29 (6):1076-1080 (in Chinese).[10] Zhang Xianfeng, Zhang Gong, Zhuang Daming. The influence of pH value to the properties of CdS thin film [J]. Acta Energiae Solaris Sinica (太阳能学报), 2009, 30 (7):870-873 (in Chinese).[11] Moualkia H, Hariech S, Aida M S. Structural and optical properties of CdS thin films grown by chemical bath deposition [J]. Thin Solid Films, 2009, 518 (4):1259-1262.[12] Liu Qi, Mao Guobing, Ao Jianping. Effects of deposition time on the properties of chemical bath deposited CdS films [J]. J. Funct. Mater.(功能材料), 2007, 38 (6):968-971 (in Chinese).[13] Oladeji I O, Chow L, Liu R J, et al. Copparative study of CdS thin films deposited by single, continuous, and multiple dip chemical processes [J]. Thin Solid Films, 2000, 359 (2):154-159.[14] Agata M, Kurase H, Hayashi S, et al. Photoluminescence spectra of gas-evaporated CdS microcrystals [J]. Solid State Communications, 1990, 76 (8):1061-1065.[15] Jiang Desheng, Li Honghui, Yu Haihu, et al. Preparation and spectral researches of CdS nanoparticls [J]. J. Wuhan University of Technology, 2005, 27 (1):7-9 (in Chinese).[16] Liu Weifeng, Jin Chuangui, Jia Chong, et al. CdS nanobelts on Si substrate [J]. Chem. Lett., 2004, 33 (3):228-229.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

一种提升LED光输出稳定性的有机-无机锰卤化物及其亮度优化

Er³⁺掺杂AlScN薄膜发光及铁电性能的协同调控

Sr₃AlO₄F∶Eu³⁺，Dy³⁺，Na⁺发光材料性能

光致发光气凝胶研究进展

Zn²⁺掺杂MgGa₂O₄∶Ni²⁺近红外二区发光材料制备、表征及其成像应用研究