气源MBE外延自组装GeSi量子点的光致荧光

李辉; 何涛; 戴隆贵; 王小丽; 王文新; 陈弘

doi:10.3788/fgxb20113208.0789

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气源MBE外延自组装GeSi量子点的光致荧光

器件制备及器件物理 | 更新时间：2020-08-12

- 气源MBE外延自组装GeSi量子点的光致荧光
- Photoluminescence of GeSi Self-assembled Quantum Dots Grown by Gas Source MBE
- 发光学报 2011年32卷第8期页码：789-792
- 作者机构：
  
  中国科学院物理研究所凝聚态物理国家重点实验室北京,100190
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10471026,10874212)资助项目()
- DOI：10.3788/fgxb20113208.0789
  中图分类号： O472.3;O482.31
- 收稿日期：2011-03-18，
  
  修回日期：2011-06-24，
  
  网络出版日期：2011-08-22，
  
  纸质出版日期：2011-08-22
- 稿件说明：
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李辉, 何涛, 戴隆贵, 王小丽, 王文新, 陈弘. 气源MBE外延自组装GeSi量子点的光致荧光[J]. 发光学报, 2011,32(8): 789-792

LI Hui, HE Tao, DAI Long-gui, WANG Xiao-li, WANG Wen-xin, CHEN Hong. Photoluminescence of GeSi Self-assembled Quantum Dots Grown by Gas Source MBE[J]. Chinese Journal of Luminescence, 2011,32(8): 789-792
李辉, 何涛, 戴隆贵, 王小丽, 王文新, 陈弘. 气源MBE外延自组装GeSi量子点的光致荧光[J]. 发光学报, 2011,32(8): 789-792 DOI： 10.3788/fgxb20113208.0789.

LI Hui, HE Tao, DAI Long-gui, WANG Xiao-li, WANG Wen-xin, CHEN Hong. Photoluminescence of GeSi Self-assembled Quantum Dots Grown by Gas Source MBE[J]. Chinese Journal of Luminescence, 2011,32(8): 789-792 DOI： 10.3788/fgxb20113208.0789.

摘要

利用气源分子束外延技术(MBE)制作了GeSi自组装量子点样品。利用原子力显微镜(AFM)和光致荧光(PL)光谱研究了该量子点的形貌和光学性质。气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度。200 K以下载流子以局域激子形式束缚在量子点中

激子束缚能约为17 meV。升温至200 K

载流子的输运过程发生变化。对量子点PL积分强度与温度关系曲线进行拟合得到量子点中空穴跃迁至浸润层的热激活能为129 meV。

Abstract

Self-assembled GeSi quantum dots (QDs) were grown by gas source molecular beam epitaxy (MBE). Morphology and optical properties of the QDs were studied by atomic force microscopy (AFM) and photoluminescence (PL) spectra. QDs structure grown by gas source MBE at lower temperature showed a higher QDs coverage

lower defect and impurity density. Below 200 K

carriers are trapped in QDs as excitons with bonding energy of about 17 meV.The transport process changes as increasing the temperature to 200 K. By fitting the temperature dependence curves of PL integrated intensity

the activation energy of 129 meV representing the energy difference between the wetting layer and QDs was obtained.

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references

Wang K L,Cha D H, Liu J L, et al. Ge/Si self-assembled quantum dots and their optoelectronic device applications [J].Proc. IEEE, 2007, 95 (9):1866-1883.[2] Tong S, Liu J L, Wan J, et al. Normal-incidence Ge quantum-dot photodetectors at 1.5 m based on Si substrate [J]. Appl. Phys. Lett., 2002, 80 (7):1189-1191.[3] Wei Rongshan, Deng Ning, Wang Minsheng, et al. Si-based Ge quantum dot infrared photodetectors [J]. Semiconductor Optoelectronics (半导体光电), 2006, 27 (4):379-382 (in Chinese).[4] Deng Haoliang, Yao Jianghong. Temperature dependence of photoluminescence in self-assembled quantum dots [J]. Chin. J. Lumin. (发光学报), 2007, 28 (1):109-113 (in Chinese).[5] Lenchyshyn L C, Thewalt M L W, Sturm J C, et al. High quantum efficiency photoluminescence from localized excitons in Si1-xGex [J]. Appl. Phys. Lett., 1992, 60 (25):3174-3176.[6] Liu Xiaohan, Huang Daming, Jiang Zuimin, et al. Photoluminescence from trapped excitons in Si1-xGex quantum well structures [J]. J. Phys.: Condensed Matter, 1996, 8 (21):3947-3954.[7] Kamenev B V, Tsybeskov L, Baribeau J M, et al. Coexistence of fast and slow luminescence in three-dimensional Si/Si1-xGex nanostructures [J]. Phys. Rev. B, 2005, 72 (19):193306-1-4.[8] Wachter M, Schaffler F, Herzog H J, et al. Photoluminescence of high-quality SiGe quantum wells grown by molecular beam epitaxy [J]. Appl. Phys. Lett., 1993, 63 (3):376-378.[9] Sunamura H, Shiraki Y, Fukatsu S. Growth mode transition and photoluminescence properties of Si1-xGex/Si quantum well structures with high Ge composition [J]. Appl. Phys. Lett., 1995, 66 (8):953-955.

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