处理温度及CdS量子点对Eu3+掺杂SiO2干凝胶光致发光性质的影响

徐磊华; 强颖怀; 江利; 顾永琴

doi:10.3788/fgxb20113208.0784

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处理温度及CdS量子点对Eu³⁺掺杂SiO₂干凝胶光致发光性质的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 处理温度及CdS量子点对Eu³⁺掺杂SiO₂干凝胶光致发光性质的影响
- Influence of Annealing Temperature and CdS QD-doping on The Photoluminescence Properties of Eu³⁺ Doped Silica Xerogels
- 发光学报 2011年32卷第8期页码：784-788
- 作者机构：
  
  1. 中国矿业大学材料科学与工程学院,江苏徐州,221116
  2. 中国矿业大学化工学院, 江苏徐州 221116
- 作者简介：
- 基金信息：
  
  中国矿业大学科技攀登计划(ON090237)资助项目()
- DOI：10.3788/fgxb20113208.0784
  中图分类号： O482.31
- 收稿日期：2011-02-12，
  
  修回日期：2011-05-18，
  
  网络出版日期：2011-08-22，
  
  纸质出版日期：2011-08-22
- 稿件说明：
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徐磊华, 强颖怀, 江利, 顾永琴. 处理温度及CdS量子点对Eu3+掺杂SiO2干凝胶光致发光性质的影响[J]. 发光学报, 2011,32(8): 784-788

XU Lei-hua, QIANG Ying-huai, JIANG Li, Gu Yong-qin. Influence of Annealing Temperature and CdS QD-doping on The Photoluminescence Properties of Eu3+ Doped Silica Xerogels[J]. Chinese Journal of Luminescence, 2011,32(8): 784-788
徐磊华, 强颖怀, 江利, 顾永琴. 处理温度及CdS量子点对Eu3+掺杂SiO2干凝胶光致发光性质的影响[J]. 发光学报, 2011,32(8): 784-788 DOI： 10.3788/fgxb20113208.0784.

XU Lei-hua, QIANG Ying-huai, JIANG Li, Gu Yong-qin. Influence of Annealing Temperature and CdS QD-doping on The Photoluminescence Properties of Eu3+ Doped Silica Xerogels[J]. Chinese Journal of Luminescence, 2011,32(8): 784-788 DOI： 10.3788/fgxb20113208.0784.

摘要

以正硅酸乙酯为原料

采用溶胶-凝胶法制备了Eu

掺杂的SiO

凝胶和Eu

/CdS量子点共掺杂的SiO

干凝胶。考察了不同温度下处理2 h对Eu

掺杂SiO

凝胶发光性质的影响。在40 ℃干燥的样品荧光光谱中

没有出现614 nm发射峰

455 nm处的峰也很弱;随着干燥处理温度的升高

455 nm和614 nm处的发射逐渐增强;当温度高于400 ℃后

强度又都随之下降。同时

还考察了200 ℃条件下处理2 h的Eu

/CdS量子点共掺杂的SiO

干凝胶的发光性质及CdS量子点对Eu

荧光的影响。

Abstract

Silica xerogels doped with Eu

ions and co-doped with Eu

/CdS nanoparticles were prepared through a two-step hydrolysis process. The effect of annealing temperature on photoluminescence properties of Eu

-doped silica xerogel was investigated. The results showed that the photoluminescence intensity of Eu

-doped silica xerogels was significantly dependent on the annealing temperature

which was closely related to the amount of the defect in xerogel network. The emission intensity increased with the annealing temperature from 40 ℃ to 300 ℃ . But when the temperature exceeded 300 ℃

the intensity decreased with the annealing temperature. The study of the photoluminescence of co-doped xerogels showed that the intrinsic emissions due to

transitions of Eu

were observed

and the intensity was sensitive to the surface states of CdS particles and of the porous silica gel.

关键词

Keywords

references

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