衬底温度对ZnO薄膜的结构和光学特性的影响

您当前的位置：

首页 >

文章列表页 >

衬底温度对ZnO薄膜的结构和光学特性的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 衬底温度对ZnO薄膜的结构和光学特性的影响
- Substrates Temperature Influence on the Structural and Opticcal Properties of ZnO Films
- 发光学报 2011年32卷第7期页码：736-739
- 作者机构：
  
  1. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
  2. 华南师范大学光电子材料与技术研究所,广东广州,510631
  3. 深圳大学材料科学与工程学院,广东深圳,518060
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60976036)();广东省自然科学基金(8151806001000009)();广东省育苗项目(LYM10063)资助项目()
- DOI：10.3788/fgxb20113207.0736
  中图分类号： O482.31
- 收稿日期：2011-01-25，
  
  修回日期：2011-05-24，
  
  网络出版日期：2011-07-22，
  
  纸质出版日期：2011-07-22
- 稿件说明：
移动端阅览
宿世臣, 吕有明, 张吉英, 申德振. 衬底温度对ZnO薄膜的结构和光学特性的影响[J]. 发光学报, 2011,32(7): 736-739

SU Shi-chen, LV You-ming, ZHANG Ji-ying, SHEN De-zhen. Substrates Temperature Influence on the Structural and Opticcal Properties of ZnO Films[J]. Chinese Journal of Luminescence, 2011,32(7): 736-739
宿世臣, 吕有明, 张吉英, 申德振. 衬底温度对ZnO薄膜的结构和光学特性的影响[J]. 发光学报, 2011,32(7): 736-739 DOI： 10.3788/fgxb20113207.0736.

SU Shi-chen, LV You-ming, ZHANG Ji-ying, SHEN De-zhen. Substrates Temperature Influence on the Structural and Opticcal Properties of ZnO Films[J]. Chinese Journal of Luminescence, 2011,32(7): 736-739 DOI： 10.3788/fgxb20113207.0736.

摘要

利用等离子体辅助分子束外延(P-MBE)设备在蓝宝石衬底上通过改变生长温度

制备了不同的ZnO样品。研究了衬底温度对ZnO的结构、光学和电学性质的影响。样品的晶体结构利用X射线衍射谱进行表征。X射线衍射谱表明

所有的ZnO样品都是(002)取向的六角纤锌矿结构。随着生长温度的升高

X射线的(002)衍射峰的半峰全宽逐渐减小。样品的表面形貌随着衬底的温度改变而变化

在800 ℃得知了平整的ZnO表面。通过光致发光的实验得知

ZnO的紫外发光随着生长温度的升高

强度逐渐增强。光致发光的来源为ZnO的自由激子发光。在生长温度为800 ℃时

得到了高质量的ZnO单晶薄膜

X射线衍射峰的最大半峰全宽为0.05

霍尔迁移率为51 cm

2

/(Vs)

载流子浓度为1.810

18

cm

-3

。

Abstract

The ZnO films grown with different growth temperature have been deposited on

c

-Al

2

O

3

substrates by plasma assistant molecular beam epitaxy (P-MBE). Their crystal structures are characterized by X-ray diffraction (XRD). The XRD results indicate that all the ZnO films with the (002) preference orientation of hexagonal wurtzite structure. The full width at half maximum (FWHM) of the (002) diffraction peak decreases as the growth temperature increasing. The surface morphology of the ZnO films is measured by scanning electron microscope (SEM)

the surface morphology of the ZnO films grown at different growth temperature changes gradually. In the SEM image of the film grown at 500 ℃

there are a large number of particles

and the surface of the film is rough. The particle size is about 50~100 nm.The particle size increases (about 100~200 nm) at 600 ℃ growth

which indicates that the particle size increase with the increasing of the growth temperature. As the film growth temperature reaches 700 and 800 ℃

it can be found that the surface of the film become uniform and smooth from the SEM image. The photoluminescence (PL) intensity of the ZnO film increased with the increasing of the growth temperature. The origin of the PL peak is the free exciton emission. The carrier concentration and Hall mobility of the films as a function of growth temperature are studied. Hall measurements show that all the films are n-type. The carrier concentration value decreases gradually from 3.410

18

cm

-3

to a value of 1.810

18

cm

-3

with increasing the growth temperature from 500 to 800 ℃. The Hall mobility of ZnO films rises from 11 cm

2

/(Vs) to 51 cm

2

/(Vs) with the increase of film growth temperature. The high quality ZnO thin films was obtained at 800 ℃

exhibiting that the FWHM of XRD is about 0.05

the Hall mobility is about 51 cm

2

/(Vs)

the carrier concentration is about 1.810

18

cm

-3

.

关键词

Keywords

references

Look D C, Reynolds D C, Sizelove J R, et al. Electrical properties of bulk ZnO [J]. Solid State Commun., 1998, 105 (6):399-401.[2] Tang Z K, Yu P, Wong G K L, et al. Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature [J]. Solid State Commun., 1997, 103 (8):459-463.[3] Cao H, Wu J Y, Dai J Y, et al. Second harmonic generation in laser ablated zinc oxide thin films [J]. Appl. Phys. Lett., 1998, 73 (5):572-574.[4] Look D C, Reynolds D C, Litton C W, et al. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy [J]. Appl. Phys. Lett., 2002, 81 (10):1830-1832.[5] Tsukazaki A, Onuma T, Makino T, et al. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J]. Nat. Mater., 2005, 4 (1):42-46.[6] Chen Y F, Baganall D M, Hang J, et al. P-MBE of ZnO on c-plane sapphire: Growth and characterization [J]. J. Appl.Phys., 1998, 84 (5):3913-3917.[7] Klingshirn C. The luminescence of ZnO under high one-and two-quantum excitation[J]. Phys. Scat. Sol.(b), 1975, 71 (2):547-559.[8] Dong Binzhong, Fang Guojia, Wang Jjanfeng, et al. Effect of thickness on structural, electrical, and optical properties of ZnO ∶ Al films deposited by pulsed laser deposition [J]. J. Appl. Phys., 2007, 101 (3):033713-1-7.[9] Choopun S, Vispute R D, Noch W, et al. Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire [J]. Appl. Phys. Lett., 1999, 75 (25):3947-3949.[10] Prepelita P, Medianu R, Garoi F, et al. The influence of using different substrates on the structural and optical characte-ristics of ZnO thin films [J]. Appl. Surf. Sci., 2010, 256 (6):1807-1811.[11] Kumar M, Mehra R M, Wakahara A, et al. Epitaxial growth of high quality ZnO ∶ Al film on silicon with a thin -Al2O3 buffer layer [J]. J. Appl. Phys., 2003, 93 (7):3837-3843.

0

浏览量

174

下载量

1

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

相关文章

常压MOCVD生长ZnO薄膜及其性质

基于小分子半导体IEICO的高性能倍增型有机光电探测器

硝酸铟诱导的电沉积氧化锌纳米柱光学性质裁剪

液晶-氧化锌纳米复合材料的可调发光

空气中氧化锌基可循环使用光催化剂

相关作者

王立

莫春兰

熊传兵

蒲勇

陈玉凤

彭绍琴

江风益

王建彬

相关机构

南昌大学材料科学研究所

闽江学院物理与电子信息工程学院

重庆大学光电工程学院

国家能源集团绿色能源与建筑研究中心

北京低碳清洁能源研究院

AI问答

地址：长春市经济技术开发区东南湖大路3888号邮编：130033
联系电话：0431-86176862 Email：fgxbt@126.com
本系统由Light学术出版中心、北京北大方正电子有限公司共建吉ICP备11002662号-17 京公网安备11010802024621
本系统建议在Chrome、 IE9+ 以上版本浏览器阅读本站内容，360浏览器请切换至极速模式
Cookies帮助我们提供服务并提供个性化体验。使用本网站，即表示您同意我们使用Cookies

⁰