多层栅介质层有机薄膜晶体管的存储与光响应特性

王伟; 马东阁; 高强; 石家纬; 曹军胜

doi:10.3788/fgxb20113207.0729

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多层栅介质层有机薄膜晶体管的存储与光响应特性

器件制备及器件物理 | 更新时间：2020-08-12

- 多层栅介质层有机薄膜晶体管的存储与光响应特性
- Memory and Photo-responses Characteristics of Organic Thin Film Transistors Based on Multi-layer Gate Dielectric
- 发光学报 2011年32卷第7期页码：729-735
- 作者机构：
  
  1. 中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,吉林长春,130022
  2. 集成光电子学国家重点联合实验室吉林大学实验区吉林大学电子科学与工程学院,吉林长春,130012
  3. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60707015)();吉林省科技发展计划(20080173)资助项目()
- DOI：10.3788/fgxb20113207.0729
  中图分类号： TN386
- 收稿日期：2011-01-15，
  
  修回日期：2011-03-14，
  
  网络出版日期：2011-07-22，
  
  纸质出版日期：2011-07-22
- 稿件说明：
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王伟, 马东阁, 高强, 石家纬, 曹军胜. 多层栅介质层有机薄膜晶体管的存储与光响应特性[J]. 发光学报, 2011,32(7): 729-735

WANG Wei, MA Dong-ge, GAO Qiang, SHI Jia-wei, CAO Jun-sheng. Memory and Photo-responses Characteristics of Organic Thin Film Transistors Based on Multi-layer Gate Dielectric[J]. Chinese Journal of Luminescence, 2011,32(7): 729-735
王伟, 马东阁, 高强, 石家纬, 曹军胜. 多层栅介质层有机薄膜晶体管的存储与光响应特性[J]. 发光学报, 2011,32(7): 729-735 DOI： 10.3788/fgxb20113207.0729.

WANG Wei, MA Dong-ge, GAO Qiang, SHI Jia-wei, CAO Jun-sheng. Memory and Photo-responses Characteristics of Organic Thin Film Transistors Based on Multi-layer Gate Dielectric[J]. Chinese Journal of Luminescence, 2011,32(7): 729-735 DOI： 10.3788/fgxb20113207.0729.

摘要

在真空室内一次性制备了具有多层栅介质层结构的有机薄膜晶体管(OTFTs)。结果表明

制备的OTFTs具有电控开关、存储和光敏多重功能特性。分析认为

存储特性归功于器件的结构

采用了分离的CaF

纳米粒子岛作为电荷俘获中心。在光照环境下

观察到了两种不同类型的光响应特性。快速的光响应来自于有源层吸收了能量大于带隙的光子所产生的可移动的电荷

慢的光响应归因于电场作用下光感应的电子在栅介质陷阱的俘获与释放。

Abstract

The organic thin film transistors (OTFTs) based on multi-layer gate dielectric were presented without vacuum breaks. As a result

the OTFTs show multi-functional properties

such as electric-switching

memory

and photosensitive. The memory effect was attributed to the structure of OTFTs

i.e.

the utilization of the separated CaF

nanoparticle islands acting as the charge trapping centers. The photo-responses included two different types of fast response and slow response

and are

respectively

originated from the generation of mobile carriers by the absorption of photo energy higher than the band gap energy of semiconductor and the tapped and released of photo-induced electrons by the traps in the dielectric at the electrical field modulation.

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Keywords

references

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