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1. 中国科学院 苏州纳米技术与纳米仿生研究所,江苏 苏州,215123
2. 中国科学院 研究生院 北京,100039
收稿日期:2011-02-15,
修回日期:2011-04-24,
网络出版日期:2011-07-22,
纸质出版日期:2011-07-22
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付凯, 于国浩, 陆敏. GaN基PIN结构X射线探测器[J]. 发光学报, 2011,32(7): 720-723
FU Kai, YU Guo-hao, LU Min. GaN-based PIN Detectors for X-ray Detector[J]. Chinese Journal of Luminescence, 2011,32(7): 720-723
付凯, 于国浩, 陆敏. GaN基PIN结构X射线探测器[J]. 发光学报, 2011,32(7): 720-723 DOI: 10.3788/fgxb20113207.0720.
FU Kai, YU Guo-hao, LU Min. GaN-based PIN Detectors for X-ray Detector[J]. Chinese Journal of Luminescence, 2011,32(7): 720-723 DOI: 10.3788/fgxb20113207.0720.
使用GaN基材料制备了PIN结构核辐射探测器
研究了探测器对X射线响应的多方面性能。在没有X射线照射时
探测器具有很小的漏电流
在-10 V时小于0.1 nA。对探测器的X射线的响应时间特性进行了分析和模拟
给出了很好的物理机制解释。研究了信噪比随外加偏压的变化
并得到了最佳信噪比对应的工作电压为-20 V。
GaN-based PIN radiation detectors were fabricated
and various response properties of the detectors under X-ray irradiation were studied. In the absence of X-ray irradiation
the detectors have very low leakage current less than 0.1 nA at -10 V. Time response of the detectors to X-ray was analyzed and simulated
following a reasonable interpretation of the physical mechanism. The relationship between signal to noise ratio(SNR) and applied bias was investigated
and an optimum voltage of -20 V corresponding to the best SNR was found.
Xiao Youpeng, Mo Chuanlan, Qiu Chong, et al. The aging characteristics of GaN-based blue LED on Si substrate [J]. Chin. J. Lumin. (发光学报), 2010, 31 (3):364-368 (in Chinese).[2] Xiong Yijing, Zhang Meng, Xiong Chuanbing, et al. Investigation of strain of GaN light-emitting diode films transferred to metal substrate from Si(111) [J]. Chin. J. Lumin. (发光学报), 2010, 31 (4):531-537 (in Chinese).[3] Chen Guichu, Fan Guanghan. Effect of Al composition on the properties of GaN-based quantum cascade laser [J]. Chin. J. Lumin. (发光学报), 2009, 30 (4):473-476 (in Chinese).[4] Ryu Han-Youl, Ha Kyoung-Ho, Chae Jung-Hye, et al. Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics [J]. Appl. Phys. Lett., 2005, 87 (9):093506-1-3.[5] Mishra U K, Parikh P, Wu Y F. AlGaN/GaN HEMTsan overview of device operation and applications [J]. Proceedings of the IEEE, 2002, 90 (6):1022-1031.[6] Wu Y F, Saxler A, Moore M, et al. 30-W/mm GaN HEMTs by field plate optimization [J]. Electron Device Lett. IEEE, 2004, 25 (3):117-119.[7] Zhou Mei, Zhao Degang. Effect of structure parameters on the performances of GaN Schottky barrier ultraviolet photodetectors and device design [J]. Chin. J. Lumin. (发光学报), 2009, 30 (6):824-831 (in Chinese).[8] Zhao Z M, Jiang R L, Chen P, et al. Metal-semiconductor-metal GaN ultraviolet photodetectors on Si(111) [J]. Appl. Phys. Lett., 2000, 77 (3):444-446.[9] Szweda R. GaN and SiC detectors for radiation and medicine [J]. Ⅲ-Vs Review, 2005, 18 (7):40-41.[10] Sellin P J, Vaitkus J. New materials for radiation hard semiconductor detectors [J]. Nuclear Instruments and Methods in Physics Research Section A:Accelerators, Spectrometers, Detectors and Associated Equipment, 2006, 557 (2):479-489.[11] Vaitkus J, Cunningham W, Gaubas E, et al. Semi-insulating GaN and its evaluation for particle detection [J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003, 509 (1-3):60-64.[12] Grant J, Bates R, Cunningham W, et al. GaN as a radiation hard particle detector [J]. Nuclear Instruments and Methods in Physics Research Section A:Accelerators, Spectrometers, Detectors and Associated Equipment, 2007, 576 (1):60-65.[13] Duboz Jean-Yves, Lauegt Marguerite, Schenk David, et al. GaN for X-ray detection [J]. Appl. Phys. Lett., 2008, 92 (26):263501-1-3.[14] Duboz Jean-Yves, Beaumont Bernard, Reverchon Jean-Luc, et al. Anomalous photoresponse of GaN X-ray Schottky detectors [J]. J. Appl. Phys., 2009, 105 (11):114512-1-7.[15] Fu Kai, Yu Guohao, Lu Min. Time response of GaN Schottky detector for X-ray detection [J]. Atomic Energy Science and Technology (原子能科学技术), 2010, 44 (Suppl.):449-452 (in Chinese).
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