利用In0.82Ga0.18As与InP衬底之间的应力制作结构材料的缓冲层

张铁民; 缪国庆; 傅军; 符运良; 林红

doi:10.3788/fgxb20113206.0612

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利用In_0.82Ga_0.18As与InP衬底之间的应力制作结构材料的缓冲层

器件制备及器件物理 | 更新时间：2020-08-12

- 利用In_0.82Ga_0.18As与InP衬底之间的应力制作结构材料的缓冲层
- Preparation of Buffer by The Stress Between In_0.82Ga_0.18As Layer and InP Substrate
- 发光学报 2011年32卷第6期页码：612-616
- 作者机构：
  
  1. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
  2. 海南师范大学物理与电子工程学院,海南海口,571158
- 作者简介：
- 基金信息：
  
  海南省教育厅高等学校科研项目基金(Hjkj2010-21)();国家自然科学基金重点项目(50632060)();国家自然科学基金面上项目(50972141)();海南
- DOI：10.3788/fgxb20113206.0612
  中图分类号： O472.1;O472.4
- 收稿日期：2010-10-08，
  
  修回日期：2011-03-22，
  
  网络出版日期：2011-06-22，
  
  纸质出版日期：2011-06-22
- 稿件说明：
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张铁民, 缪国庆, 傅军, 符运良, 林红. 利用In0.82Ga0.18As与InP衬底之间的应力制作结构材料的缓冲层[J]. 发光学报, 2011,32(6): 612-616

ZHANG Tie-min, MIAO Guo-qing, FU Jun, FU Yun-liang, LIN Hong. Preparation of Buffer by The Stress Between In0.82Ga0.18As Layer and InP Substrate[J]. Chinese Journal of Luminescence, 2011,32(6): 612-616
张铁民, 缪国庆, 傅军, 符运良, 林红. 利用In0.82Ga0.18As与InP衬底之间的应力制作结构材料的缓冲层[J]. 发光学报, 2011,32(6): 612-616 DOI： 10.3788/fgxb20113206.0612.

ZHANG Tie-min, MIAO Guo-qing, FU Jun, FU Yun-liang, LIN Hong. Preparation of Buffer by The Stress Between In0.82Ga0.18As Layer and InP Substrate[J]. Chinese Journal of Luminescence, 2011,32(6): 612-616 DOI： 10.3788/fgxb20113206.0612.

摘要

采用低压金属有机化学气相淀积(LP-MOCVD)技术

在InP (100)衬底上生长In

0.82

0.18

研究生长温度对In

0.82

0.18

As材料表面形貌、结晶质量和电学性能的影响。利用InP(100)衬底与In

0.82

0.18

As材料晶格失配所产生的应变

在不同的生长温度下应变释放程度不同

进而在In

0.82

0.18

As表面形成不同类型的缓冲层。分析不同的缓冲层对外延层In

0.82

0.18

As的影响

从而优化出最佳的生长温度。

Abstract

0.82

0.18

As layers were grown on semi-insulating Fe-doped InP (100) substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The growth was performed using TMIn

TMGa

and AsH

as growth precursors of In

and As

respectively

in a horizontal reactor. The substrate on a graphite susceptor was heated by inductively coupling radio frequency power

the growth temperature was detected by a thermocouple

and the reactor pressure was kept at 110

Pa. Thickness of In

0.82

0.18

As layer for all samples was kept to be 300 nm. In our experiments

the growth temperature of In

0.82

0.18

As layers was 390

410

430

450

470

530 ℃

respectively. Because the strain caused by the lattice mismatch between In

0.82

-Ga

0.18

As layer and InP substrate was varied from the growth temperature

the surface of In

0.82

0.18

As layer was different. It was analyzed that the growth temperature of In

0.82

0.18

As layer influenced on the surface morphology

crystalline quality and the electrical property of the In

0.82

0.18

As layer. The surface morphology of In

0.82

0.18

As layer was studied by the scanning electron microscopy (SEM). The components and crystalline quality of In

0.82

0.18

As layer were characterized by X-ray diffraction (XRD). The electrical property of In

0.82

0.18

As layer was measured using the Hall Effect. This work shows a useful way how to design for the optimum buffer in growthing highly mismatched epitaxy layers.

关键词

Keywords

references

Nagai H, Noguchi Y, Crack formation in InP-GaxIn1-xAs-InP double heterostructure fabrication [J]. Appl. Phys. Lett., 1976, 29 (11):740-741.[2] Bandy S, Nishimoto C, Hyder S, et al. Saturation velocity determination for In0.53Ga0.47As field-effect transistors [J]. Appl. Phys. Lett., 1981, 38 (10):817-819.[3] Murray S L, Newman F D, Murray C S, et al. MOCVD growth of lattice matched and mismatched InGaAs materials for thermophotovoltaic energy conversion [J]. Semicond. Sci. Technol., 2003, 18 (5):s202-s208.[4] Bachmann K J, Shay J L, An InGaAs detector for the 1.0-1.7-m wavelength range [J]. Appl. Phys. Lett., 1978, 32 (7):446-448.[5] Ducommun Y, Kroutvar M, Finley J J, et al. Dynamics of optically stored charges in InGaAs quantum dots [J]. Physica E, 2004, 21 (2-4):886-891.[6] Hoogeveen R W M, van der A R J, Goede A P H. Extended wavelength InGaAs infrared (1.0~2.4m) detector arrays on SCIAMACHY for space based spectrometry of the earth atmosphere [J]. Infrared Phys. Techn., 2001, 42 (1):1-16.[7] Mathews J W, Mader S, Light T B. Accommodation of misfit across the interface between crystals of semiconducting elements or compounds [J]. J. Appl. Phys., 1970, 41 (9):3800-3805.[8] Fitzgerald E A, Watson G P, Proano R E, et al. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area [J]. J. Appl. Phys., 1989, 65 (6):2220-2237.[9] Guha S, Madhukar A, Chen Li, Defect reduction in strained InxGa1-xAs via growth on GaAs(100) substrates patterned to submicron dimensions [J]. Appl. Phys. Lett., 1990, 56 (23):2304-2306.[10] Zhang Tiemin, Miao Guoqing, Song Hang, et al. Effect of buffer layer growth temperature on structural and electrical properties of In0.82Ga0.18As with two step growth technique [J]. Chin. J. Lumin. (发光学报), 2009, 30 (6):787-791 (in English).[11] Goldman R S, Chang J C P, Kavanagh K L, Control of surface morphology and strain relaxation of InGaAs grown on GaAs using a step-graded buffer [J]. SPIE, 1994, 2140 :179-188.

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