高功率垂直腔面发射激光器的湿法腐蚀工艺

侯立峰; 冯源; 杨永庄; 瞿建新; 赵英杰

doi:10.3788/fgxb20113206.0598

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高功率垂直腔面发射激光器的湿法腐蚀工艺

器件制备及器件物理 | 更新时间：2020-08-12

- 高功率垂直腔面发射激光器的湿法腐蚀工艺
- The Wet Etching Process of High-power VCSEL
- 发光学报 2011年32卷第6期页码：598-602
- 作者机构：
  
  1. 长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
  2. 装甲兵技术学院电子工程系,吉林长春,130117
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60677009)资助项目()
- DOI：10.3788/fgxb20113206.0598
  中图分类号： TN248.4
- 收稿日期：2010-12-18，
  
  修回日期：2011-01-22，
  
  网络出版日期：2011-06-22，
  
  纸质出版日期：2011-06-22
- 稿件说明：
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侯立峰, 冯源, 杨永庄, 瞿建新, 赵英杰. 高功率垂直腔面发射激光器的湿法腐蚀工艺[J]. 发光学报, 2011,32(6): 598-602

HOU Li-feng, FENG Yuan, YANG Yong-zhuang, QU Jian-xin, ZHAO Ying-jie. The Wet Etching Process of High-power VCSEL[J]. Chinese Journal of Luminescence, 2011,32(6): 598-602
侯立峰, 冯源, 杨永庄, 瞿建新, 赵英杰. 高功率垂直腔面发射激光器的湿法腐蚀工艺[J]. 发光学报, 2011,32(6): 598-602 DOI： 10.3788/fgxb20113206.0598.

HOU Li-feng, FENG Yuan, YANG Yong-zhuang, QU Jian-xin, ZHAO Ying-jie. The Wet Etching Process of High-power VCSEL[J]. Chinese Journal of Luminescence, 2011,32(6): 598-602 DOI： 10.3788/fgxb20113206.0598.

摘要

为提高高功率垂直腔面发射激光器(VCSEL)光电性能

对氧化限制型高功率VCSEL湿法腐蚀工艺进行了实验研究。实验中采用H

系溶液替代以往制备此类器件常用的H

系溶液作为高功率VCSEL外延片的腐蚀液

利用扫描电镜(SEM)研究了腐蚀后外延片氧化窗口的腐蚀形貌变化与腐蚀液浓度的关系

消除了以往采用H

系溶液腐蚀时

高功率VCSEL氧化层侧壁出现的"燕尾"结构;通过改变湿法腐蚀工艺的外部温度条件和腐蚀液的浓度配比

实验研究了高功率VCSEL湿法腐蚀速率规律

最后得出了制备高功率VCSEL时湿法腐蚀工艺的最佳外部温度条件与腐蚀液的最佳浓度配比。

Abstract

The processing of the wet etching have been studied with experiments in oxidation confinement high-power vertical-cavity surface-emitting lasers (VCSEL) in order to improve opto-electric characteristics of high-power VCSEL. In the experiments we use the H

liquid as etching liquid in stead of H

liquid. The relation between the etching shape change of the epitaxial wafer with etching liquid consistency by scanning electron microscope (SEM)

we eliminated the "dovetail" structure that conventionally happened on the lateral side of the etched wall of high-power VCSEL oxidation layer; By chaging the etching liquid content and the etching condition temperature

we have studied the law of the wet etching rate. At last

we have obtained the best temperature condition and etching liquid concentration of wet etching through the experiment.

关键词

Keywords

references

Ma Qiang, Tian Zhenhua, Wang Zhenfu, et al. A theoretical model of high power VCSEL based on the thermal-offset-current [J]. Chin. J. Lumin. (发光学报), 2009, 30 (4):463-466 (in Chinese).[2] Liang Xuemei, Lu Jinkai, Cheng Liwen, et al. Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm [J]. Chin. J. Lumin. (发光学报), 2010, 31 (1):79-85 (in Chinese).[3] Hao Yongqin, Liu Wenli, Zhong Jingchang, et al. A new process in fabrication of vertical-cavity surface-emitting laser [J]. Chin. J. Lasers (中国激光), 2006, 33 (4):443-446 (in Chinese).[4] Ma Jianli, Hao Yongqin, Zhong Jingchang, et al. Study on stability of selective oxidation in vertical-cavity surface-emitting laser [J]. Chin. J. Lasers (中国激光), 2007, 34 (8):1055-1058 (in Chinese).[5] Miller M, Grabherr M, King R, et al. Improved output performance of high-power VCSELs [J]. Selected Topics in Quantum Electronics, 2001, 7 (2):210-216.[6] Sun Yanfang, Jin Zhenhua, Ning Yongqiang, et al. Fabrication and experimental characterization of high-power bottom-emitting VCSELs [J]. Optics and Precision Engineering, 2004, 12 (5):449-453.[7] Ebert T. Optimization of microchannel heatsinks for high power diode lasers in copper technology [J]. SPIE, 1998, 3285 :24-29.

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