850 nm高亮度锥形半导体激光器的光电特性

杨晔; 刘云; 秦莉; 张金龙; 彭航宇; 王烨; 李再金; 胡黎明; 史晶晶; 王超; 宁永强; 王立军

doi:10.3788/fgxb20113206.0593

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850 nm高亮度锥形半导体激光器的光电特性

器件制备及器件物理 | 更新时间：2020-08-12

- 850 nm高亮度锥形半导体激光器的光电特性
- Electro-optic Properties of 850 nm High-brightness Tapered Lasers
- 发光学报 2011年32卷第6期页码：593-597
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  吉林省科技厅重大项目(20096013)();吉林省科技厅重大项目(20086011)();吉林省科技厅科技攻关项目(20095004)资助()
- DOI：10.3788/fgxb20113206.0593
  中图分类号： TN248.4
- 收稿日期：2011-01-25，
  
  修回日期：2011-03-24，
  
  网络出版日期：2011-06-22，
  
  纸质出版日期：2011-06-22
- 稿件说明：
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杨晔, 刘云, 秦莉, 张金龙, 彭航宇, 王烨, 李再金, 胡黎明, 史晶晶, 王超, 宁永强, 王立军. 850 nm高亮度锥形半导体激光器的光电特性[J]. 发光学报, 2011,32(6): 593-597

YANG Ye, LIU Yun, QIN Li, ZHANG Jin-long, PENG Hang-yu, WANG Ye, LI Zai-jin, HU Li-ming, SHI Jing-jing, WANG Chao, NING Yong-qiang, WANG Li-jun. Electro-optic Properties of 850 nm High-brightness Tapered Lasers[J]. Chinese Journal of Luminescence, 2011,32(6): 593-597
杨晔, 刘云, 秦莉, 张金龙, 彭航宇, 王烨, 李再金, 胡黎明, 史晶晶, 王超, 宁永强, 王立军. 850 nm高亮度锥形半导体激光器的光电特性[J]. 发光学报, 2011,32(6): 593-597 DOI： 10.3788/fgxb20113206.0593.

YANG Ye, LIU Yun, QIN Li, ZHANG Jin-long, PENG Hang-yu, WANG Ye, LI Zai-jin, HU Li-ming, SHI Jing-jing, WANG Chao, NING Yong-qiang, WANG Li-jun. Electro-optic Properties of 850 nm High-brightness Tapered Lasers[J]. Chinese Journal of Luminescence, 2011,32(6): 593-597 DOI： 10.3788/fgxb20113206.0593.

摘要

采用激射波长为850 nm的AlGaInAs/AlGaAs梯度折射率波导分别限制增益量子阱结构的外延片

设计并制备了具有条形结构和锥形结构的半导体激光器。在输出功率同为1 W时

锥形激光器的发散角、光束传播因子和亮度分别为4、2.8和9.9 MWcm

-2

-1

远好于条形激光器的6、9.2和3.0 MWcm

-2

-1

。当外加3 A的脉冲电流时

锥形激光器峰值功率达到1.40 W

斜率效率为0.58 W/A

电光转换效率为30%。实验结果表明

锥形激光器可以在保证大功率输出的前提下

具有更高的光束质量。

Abstract

High-brightness tapered laser diode at 850 nm was fabricated based on the AlGaInAs/A1GaAs chip with graded-index waveguide separate confinement hetero-structure. The tapered laser has better performance than the broad laser under the same condition. The lateral divergence angles of the tapered laser and the broad laser were 4 and 6 at the output power of 1 W

while the beam propagation factor M

were 2.8 and 9.2

respectively. The slope efficiency of the tapered laser had a high value of 0.58 W/A and the conversion efficiency reached 30% in the output power 1.40 W under the injection current of 3 A. The facts indicated the tape-red laser would be an ideal choice for high brightness high power laser diodes.

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references

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