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1. 苏州大学 材料与化学化工学部,江苏 苏州,215123
2. 苏州大学 现代丝绸国家工程实验室,江苏 苏州,215123
收稿日期:2010-11-11,
修回日期:2010-11-24,
网络出版日期:2011-06-22,
纸质出版日期:2011-06-22
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顾明波, 王开涛, 秦传香, 黄彦林, 戴礼兴. La<sub>6</sub>WO<sub>12</sub> ∶ Eu<sup>3+</sup>纳米荧光粉的合成及荧光纳米纤维膜的制备[J]. 发光学报, 2011,32(6): 555-560
GU Ming-bo, WANG Kai-tao, QIN Chuan-xiang, HUANG Yan-lin, DAI Li-xing. Preparation and Luminescence Properties of La<sub>6</sub>WO<sub>12</sub> ∶ Eu<sup>3+</sup> /PVA Nanofibers by Pechini/Electrospinning Process[J]. Chinese Journal of Luminescence, 2011,32(6): 555-560
顾明波, 王开涛, 秦传香, 黄彦林, 戴礼兴. La<sub>6</sub>WO<sub>12</sub> ∶ Eu<sup>3+</sup>纳米荧光粉的合成及荧光纳米纤维膜的制备[J]. 发光学报, 2011,32(6): 555-560 DOI: 10.3788/fgxb20113206.0555.
GU Ming-bo, WANG Kai-tao, QIN Chuan-xiang, HUANG Yan-lin, DAI Li-xing. Preparation and Luminescence Properties of La<sub>6</sub>WO<sub>12</sub> ∶ Eu<sup>3+</sup> /PVA Nanofibers by Pechini/Electrospinning Process[J]. Chinese Journal of Luminescence, 2011,32(6): 555-560 DOI: 10.3788/fgxb20113206.0555.
采用Pechini法合成了La
6
WO
12
∶ Eu
3+
纳米荧光粉。分别用X射线粉末衍射(XRD)、扫描电子显微镜(SEM)、热重分析(TG-DTG)、反射光谱
荧光光谱和发光衰减曲线对样品进行了表征。该荧光粉可以被395 nm的近紫外光有效激发
进而得到峰值波长位于615 nm(电偶极跃迁
5
D
0
7
F
2
)左右的红光发射。将该荧光粉与聚乙烯醇(PVA)水溶液混合均匀
通过静电纺丝法可制得荧光纳米纤维膜
并分别采用SEM
荧光光谱和反射光谱对所得荧光纳米纤维膜进行了表征。结果表明La
6
WO
12
∶ Eu
3+
荧光纳米粉末可以复合PVA得到荧光纳米纤维膜
并可以被氮化铟镓(InGaN)或氮化镓(GaN)发光二极管有效激发而产生红色发光。
The 20% concentrated Eu
3+
-doped red-emitting phosphor
nano-sized La
6
WO
12
∶ Eu
3+
was prepared by the Pechini method. X-ray diffraction (XRD)
thermogravimetric analysis (TG-DTG)
scanning electron microscopy (SEM)
fluorescence spectrum
diffuse reflectance spectrum and decay curves were used to characterize the resulting samples. The phosphor can be efficiently excited by near UV light and exhibits an intense red luminescence corresponding to the electric dipole transition
5
D
0
7
F
2
at 615 nm. When the phosphor was mixed into poly (vinyl alcohol) aqueous solution
the fluorescent nanofibers could be prepared by electrospinning process. It was suggested that the La
6
WO
12
∶ Eu
3+
phosphor would be a promising red component for solid-state lighting devices based on InGaN or GaN white-light-emitting diodes.
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