ZnMgO 生长中压强和衬底对薄膜性质的影响

陈慧; 顾书林; 朱顺明

doi:10.3788/fgxb20113205.0482

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ZnMgO 生长中压强和衬底对薄膜性质的影响

器件制备及器件物理 | 更新时间：2020-08-12

- ZnMgO 生长中压强和衬底对薄膜性质的影响
- Influence of Different Substrate and Pressure on Growth and Properties of ZnMgO Films
- 发光学报 2011年32卷第5期页码：482-486
- 作者机构：
  
  南京大学物理系南京微结构国家重点实验室,江苏南京,210093
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60776013,50532100)();国家"();863"();计划(2007AA03Z404)资助项目()
- DOI：10.3788/fgxb20113205.0482
  中图分类号： O482.31
- 收稿日期：2010-10-14，
  
  修回日期：2011-02-21，
  
  网络出版日期：2011-05-22，
  
  纸质出版日期：2011-05-22
- 稿件说明：
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陈慧, 顾书林, 朱顺明. ZnMgO 生长中压强和衬底对薄膜性质的影响[J]. 发光学报, 2011,32(5): 482-486

CHEN Hui, GU Shu-lin, ZHU Shun-min. Influence of Different Substrate and Pressure on Growth and Properties of ZnMgO Films[J]. Chinese Journal of Luminescence, 2011,32(5): 482-486
陈慧, 顾书林, 朱顺明. ZnMgO 生长中压强和衬底对薄膜性质的影响[J]. 发光学报, 2011,32(5): 482-486 DOI： 10.3788/fgxb20113205.0482.

CHEN Hui, GU Shu-lin, ZHU Shun-min. Influence of Different Substrate and Pressure on Growth and Properties of ZnMgO Films[J]. Chinese Journal of Luminescence, 2011,32(5): 482-486 DOI： 10.3788/fgxb20113205.0482.

摘要

利用金属有机源化学气相沉积(MOCVD)生长方法

在2.5 kPa和5 kPa生长压强下

分别以sapphire(Al

)和ZnO为衬底生长ZnMgO薄膜。研究分析了样品的晶体结构、表面形貌、光电学性质。结果表明

衬底和生长压强对ZnMgO薄膜的生长有重要影响。5 kPa高压生长和以ZnO为衬底均有利于ZnMgO薄膜中Mg的掺入。

Abstract

ZnMgO films were grown on the Al

(sapphire) and ZnO substrates by metal-organic chemical vapor deposition (MOCVD) under different pressures. By analyzing the crystal structure

surface properties

optical and electrical properties of ZnMgO films

We found that different substrates and pressures have an important influence on growth and properties of ZnMgO films.Both high pressure of 5 kPa and ZnO substrate are better for Mg doping in ZnMgO.

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Keywords

references

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