NH3 等离子体后处理Co掺杂ZnO的薄膜结构及磁学性能

曹萍; 白越; 赵东旭; 申德振

doi:10.3788/fgxb20113204.0383

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NH₃ 等离子体后处理Co掺杂ZnO的薄膜结构及磁学性能

器件制备及器件物理 | 更新时间：2020-08-12

- NH₃ 等离子体后处理Co掺杂ZnO的薄膜结构及磁学性能
- Structural and Ferromagnetism Properties of NH₃ Plasma Post-treated Co-doped ZnO Thin Film
- 发光学报 2011年32卷第4期页码：383-386
- 作者机构：
  
  1. 长春工程学院, 吉林长春 130012
  2. 中国科学院长春光学精密机械与物理研究所, 吉林长春 130033
  3. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金(50905174)();吉林省科技发展计划(201101090)资助项目()
- DOI：10.3788/fgxb20113204.0383
  中图分类号： O472.3
- 收稿日期：2010-06-10，
  
  修回日期：2010-12-10，
  
  纸质出版日期：2011
- 稿件说明：
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曹萍, 白越, 赵东旭, 申德振. NH3 等离子体后处理Co掺杂ZnO的薄膜结构及磁学性能[J]. 发光学报, 2011,32(4): 383-386

CAO Ping, BAI Yue, ZHAO Dong-xu, SHEN De-zhen. Structural and Ferromagnetism Properties of NH3 Plasma Post-treated Co-doped ZnO Thin Film[J]. Chinese Journal of Luminescence, 2011,32(4): 383-386
曹萍, 白越, 赵东旭, 申德振. NH3 等离子体后处理Co掺杂ZnO的薄膜结构及磁学性能[J]. 发光学报, 2011,32(4): 383-386 DOI： 10.3788/fgxb20113204.0383.

CAO Ping, BAI Yue, ZHAO Dong-xu, SHEN De-zhen. Structural and Ferromagnetism Properties of NH3 Plasma Post-treated Co-doped ZnO Thin Film[J]. Chinese Journal of Luminescence, 2011,32(4): 383-386 DOI： 10.3788/fgxb20113204.0383.

摘要

通过电化学沉积方法成功生长了Co掺杂ZnO的薄膜

但并没有实现室温下的铁磁性。通过NH

等离子体的后处理

导致有一部分N原子进入了ZnO晶格替代了一部分O格位

从而在ZnO中产生空穴。在空穴间接交换作用下

ZnCoO薄膜中产生了被束缚的磁极子

产生了室温下的铁磁性。

Abstract

The Co-doped ZnO film was grown by electrodeposition method

the carrier concentration is 10

-3

but the sample is paramagnetism. The electrons can not induce the room temperature ferromagnetism

only the introducing of additional carriers can enhance the ferromagnetic exchange action and induce the room temperature ferromagnetism. Nitrogen-doped ZnCoO film was obtained in plasma-enhanced chemical vapor deposition system

where NH

plasma provided N source. After an ammine plasma treatment the room tempe-rature ferromagnetism was detected on ZnCoO sample. So some holes generated by N doping play an important role for the room temperature ferromagnetic properties in Co doped ZnO sample.In our experiments

although the sample still is n-type semiconductor

there are some holes in the crystal generated by plasma treatment. In this theory

a bound magnetic polarons (BMPs) could be formed after the introduction of p-type dopant N.

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references

Ditel T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blend magnetic semiconductors [J]. Science, 2000, 287 (5455):1019-1022.[2] Ye Zhigao, Zhu Liping, Peng Yingzi, et al. Fabrication and magnetic properties of Co-doped ZnO thin films by pulsed laser deposition [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):486-491 (in Chinese).[3] Peng Yingzi, Ye Zhigao, Ye Zhizhen, et al. Structural and magnetic properties of Co-doped ZnO thin films [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):479-486 (in Chinese).[4] Kittilstved K R, Norberg N S, Gamelin D R. Chemical manipulation of high-TC ferromagnetism in ZnO diluted magnetic semiconductors [J]. Phys. Rev. Lett., 2005, 94 (14):147209-1-5.[5] Sluiter M H F, Kawazoe Y, Sharma P, et al. First principles based design and experimental evidence for a ZnO-based ferromagnet at room temperature [J]. Phys. Rev. Lett., 2005, 94 (18):187204-1-5.[6] Pauling L. The Nature of the Chemical Bond [M]. Ithaca, New York: Cornell University, 1960, Chap. 3,55.[7] Masanobu F, Katsuaki Y, Osamu T. Optical properties of zinc oxynitride thin films [J]. Thin Solid Films, 1998, 317 (1-2):322-325.[8] Ma J G, Liu Y C, Mu R, et al. Method of control of nitrogen content in ZnO films: Structural and photoluminescence properties [J]. J. Vac. Sci. Technol. B, 2004, 22 (1):94-98.

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