电致发光成像技术在硅太阳能电池 隐性缺陷检测中的应用

李艳华; 潘淼; 庞爱锁; 武智平; 郑兰花; 陈朝

doi:10.3788/fgxb20113204.0378

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电致发光成像技术在硅太阳能电池隐性缺陷检测中的应用

器件制备及器件物理 | 更新时间：2020-08-12

- 电致发光成像技术在硅太阳能电池隐性缺陷检测中的应用
- The Application of Electroluminescence Imaging to Detection The Hidden Defects in Silicon Solar Cells
- 发光学报 2011年32卷第4期页码：378-382
- 作者机构：
  
  1. 厦门大学材料学院, 福建厦门 361005
  2. 厦门大学能源研究院, 福建厦门 361005
  3. 厦门大学物理与机电工程学院, 福建厦门 361005
- 作者简介：
- 基金信息：
  
  福建省科技厅2007年重大科技专项(2007HZ005-2)资助项目()
- DOI：10.3788/fgxb20113204.0378
  中图分类号： TN383.1
- 收稿日期：2010-11-04，
  
  修回日期：2010-12-28，
  
  网络出版日期：2011-04-22，
  
  纸质出版日期：2011-04-22
- 稿件说明：
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李艳华, 潘淼, 庞爱锁, 武智平, 郑兰花, 陈朝. 电致发光成像技术在硅太阳能电池隐性缺陷检测中的应用[J]. 发光学报, 2011,32(4): 378-382

LI Yan-hua, PAN Miao, PANG Ai-suo, WU Zhi-ping, ZHENG Lan-hua, CHEN Chao. The Application of Electroluminescence Imaging to Detection The Hidden Defects in Silicon Solar Cells[J]. Chinese Journal of Luminescence, 2011,32(4): 378-382
李艳华, 潘淼, 庞爱锁, 武智平, 郑兰花, 陈朝. 电致发光成像技术在硅太阳能电池隐性缺陷检测中的应用[J]. 发光学报, 2011,32(4): 378-382 DOI： 10.3788/fgxb20113204.0378.

LI Yan-hua, PAN Miao, PANG Ai-suo, WU Zhi-ping, ZHENG Lan-hua, CHEN Chao. The Application of Electroluminescence Imaging to Detection The Hidden Defects in Silicon Solar Cells[J]. Chinese Journal of Luminescence, 2011,32(4): 378-382 DOI： 10.3788/fgxb20113204.0378.

摘要

论述了一种利用硅太阳能电池在一定偏压下的电致发光(Electroluminescence

EL )成像来检测硅太阳能电池隐性缺陷的方法。硅太阳能电池的EL波长范围为850~1 200 nm。正向偏压下的EL光强反映了少数载流子的浓度及其扩散长度

而反向偏压下的EL区和发光强度对应于电池的缺陷区域和缺陷密度。用硅CCD相机对硅太阳能电池的EL快速成像

然后根据EL成像的明暗强度可检测出电池的隐性缺陷。由于内在缺陷处EL强度比外在缺陷处受温度的影响更敏感

所以可利用电池缺陷处EL强度随温度变化的差异来辨别缺陷的类型。

Abstract

A method of using electroluminescence (EL) imaging to detect the hidden defects in silicon solar cells under the condition of certain bias is presented in this paper. The EL wavelength of silicon solar cells ranges from 850 nm to 1 200 nm. In the case of forward bias

the EL intensity is related to the concentration and diffusion length of minority carriers

but under the reverse bias

EL regime and illumination intensity are corresponding to defect areas and defect density of battery

respectively. The EL of solar cells can be quickly captured by silicon CCD camera

and the hidden defects of silicon solar cell can be found according to the intensity value of EL imaging. Since the EL intensity of the intrinsic deficient is more sensitive to temperature than that of the extrinsic defect

the types of defect can be checked out by the difference of EL intensity

which responds to the change of temperature.

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references

Kaminski A, Breitenstein O, Boyeaux J P, et al. Light beam induced current and infrared thermography studies of multi-crystalline silicon solar cells [J]. J. Phys.: Condens. Matter, 2004, 16 (2):S9-S18.[2] Breitenstein O, Bauer J, Rakotoniaina J P. Aterial-induced shunts in multicrystalline silicon solar cells [J]. Semiconductors, 2007, 41 (4):440-443.[3] Breitenstein O. Defect induced non-ideal dark I-V characteristics of solar cells [J]. Superlattices and Microstructures, 2009, 45 (4-5):182-189.[4] Breitenstein O, Bauer J, Trupke T, et al. On the detection of shunts in silicon solar cells by photo- and electro-luminescence imaging [J]. Progress in Photovoltaics: Research and Applications, 2008, 16 (4):325-330.[5] Dreckschmidt F, Kaden T, Fiedler H, et al. Electroluminescence investigation of the decoration of extended defects in multicrystaline silicon //22nd European Photovoltaic Solar Energy Conference, Milian, Italy, 2007:283-286.[6] Fuyuki T, Kitiyanan A. Photographic diagnosis of crystalline silicon solar cells utilizing electroluminescence [J]. Appl. Phys. A, 2009, 96 (1):189-196.[7] Munoz J, Lorenzo E, Martinez-Moreno F, et al. An investigation into hot-spots in two large grid-connected PV plants [J]. Progress in Photovoltaics: Research and Applications, 2008, 16 (8):693-701.

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