电极布局对硅LED性能的影响

杨广华; 李晓云

doi:10.3788/fgxb20113204.0374

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电极布局对硅LED性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 电极布局对硅LED性能的影响
- Effect of The Electrode Layout on The Silicon LED Properties
- 发光学报 2011年32卷第4期页码：374-377
- 作者机构：
  
  1. 天津工业大学电气工程与自动化学院, 天津 300160
  2. 半导体照明工程研发中心, 天津 300160
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60706015)资助项目()
- DOI：10.3788/fgxb20113204.0374
  中图分类号： TN312.8
- 收稿日期：2010-05-20，
  
  修回日期：2010-10-21，
  
  网络出版日期：2011-04-22，
  
  纸质出版日期：2011-04-22
- 稿件说明：
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杨广华, 李晓云. 电极布局对硅LED性能的影响[J]. 发光学报, 2011,32(4): 374-377

YANG Guang-hua, LI Xiao-yun. Effect of The Electrode Layout on The Silicon LED Properties[J]. Chinese Journal of Luminescence, 2011,32(4): 374-377
杨广华, 李晓云. 电极布局对硅LED性能的影响[J]. 发光学报, 2011,32(4): 374-377 DOI： 10.3788/fgxb20113204.0374.

YANG Guang-hua, LI Xiao-yun. Effect of The Electrode Layout on The Silicon LED Properties[J]. Chinese Journal of Luminescence, 2011,32(4): 374-377 DOI： 10.3788/fgxb20113204.0374.

摘要

采用0.35 m 双栅标准CMOS工艺设计和制备了叶型硅发光器件。叶型硅发光器件由3个楔型器件的组合而成

pn结结构为n阱/p

结。使用奥林巴斯IC显微镜测得了器件的显微图形

并对器件进行了电学特性测试。器件工作在雪崩击穿下

开启电压为8.8 V

能够发出黄色可见光;正向偏置下

器件开启电压为0.8 V。在与已经制备的楔型器件比较时发现

器件发光受串联电阻分压影响

并且有点增强发光现象

这些情况均与器件的电极布局有关。

Abstract

A leaf-shaped silicon light-emitting device is designed and fabricated with standard 0.35 m CMOS dual gate technology. The left-shaped light-emitting device includes three wedge-shaped emitting devices

and the pn junction structure is n well/p

junction. The device's photograph is measured using the Olympus IC microscope

and the electrical properties of devices were tested. The device operates in avalanche breakdown

and the threshold voltage is 8.8 V

which can emit yellow and visible light. Under forward bias condition

the turn-on voltage of the device is 0.8 V. Comparing with the wedge device

the leaf-shaped device is affected by the series resistance divider

and appears an enhanced luminescence on the tip. After analyzing the results

it is obtained that they are related to the layout of electrode.

关键词

Keywords

references

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