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利用MOCVD在r面蓝宝石上生长的 a面GaN中两步AlN缓冲层的优化
Optimization of Two-step AlN Buffer of a-plane GaN Films Grown on r-plane Sapphire by MOCVD
- 发光学报 2011年32卷第4期 页码：363-367
- 作者机构：
中国科学院物理研究所 凝聚态国家重点实验室, 北京 100190
- 作者简介：
- 基金信息：Project supported by the National Natural Science Foundation of China (60890192,6087
DOI：10.3788/fgxb20113204.0363
中图分类号： O472;O482.31收稿日期：2011-01-20，
修回日期：2011-02-07，
网络出版日期：2011-04-22，
纸质出版日期：2011-04-22
- 稿件说明：
移动端阅览
何涛, 陈耀, 李辉, 戴隆贵, 王小丽, 徐培强, 王文新, 陈弘. 利用MOCVD在<em>r</em>面蓝宝石上生长的 <em>a</em>面GaN中两步AlN缓冲层的优化[J]. 发光学报, 2011,32(4): 363-367
HE Tao, CHEN Yao, LI Hui, DAI Long-gui, WANG Xiao-li, XU Pei-qiang, WANG Wen-xin, CHEN Hong. Optimization of Two-step AlN Buffer of <em>a</em>-plane GaN Films Grown on <em>r</em>-plane Sapphire by MOCVD[J]. Chinese Journal of Luminescence, 2011,32(4): 363-367
何涛, 陈耀, 李辉, 戴隆贵, 王小丽, 徐培强, 王文新, 陈弘. 利用MOCVD在<em>r</em>面蓝宝石上生长的 <em>a</em>面GaN中两步AlN缓冲层的优化[J]. 发光学报, 2011,32(4): 363-367 DOI： 10.3788/fgxb20113204.0363.
HE Tao, CHEN Yao, LI Hui, DAI Long-gui, WANG Xiao-li, XU Pei-qiang, WANG Wen-xin, CHEN Hong. Optimization of Two-step AlN Buffer of <em>a</em>-plane GaN Films Grown on <em>r</em>-plane Sapphire by MOCVD[J]. Chinese Journal of Luminescence, 2011,32(4): 363-367 DOI： 10.3788/fgxb20113204.0363.
摘要
采用两步AlN缓冲层(一层低温AlN和一层高温AlN)在
r
面蓝宝石衬底上生长了非极性的
a
面GaN
并利用高分辨X射线衍射和光致荧光谱对所生长的材料进行了研究。两步AlN缓冲层在我们之前的工作中已被证明比单步高温AlN或低温GaN缓冲层更有利于减小材料各向异性和提高晶体质量
本文进一步优化了两步AlN缓冲层的结构
并得到了各向异性更小
晶体质量更好的
a
面GaN薄膜。分析表明
两步AlN缓冲层中的低温AlN层在减小各向异性中起着关键作用。低温AlN层能抑制了优势方向(
c
轴)的原子迁移
有利于劣势方向(
m
轴)的原子迁移
从而减小了Al原子在不同方向迁移能力的差异
并为其后的高温AlN缓冲层和GaN层提供"生长模板"
以得到各向异性更小、晶体质量更好的
a
面GaN材料。
Abstract
Nonpolar (112 0)
a
-plane GaN films with two-step AlN buffer(a low-temperature (LT) and a high-temperature (HT) AlN layers) were grown on (11 02)
r
-plane sapphire by metalorganic chemical vapor deposition (MOCVD). The as-grown films were investigated by high-resolution X-ray diffraction (XRD) and photoluminescence (PL). The two-step AlN buffer has been proved to be advantageous in crystal quality compared with one-step LT-GaN or HT-AlN buffers in our early works. In this report
the thickness of the two-step buffer was further optimized
and much less anisotropic
a
-plane GaN films were achieved. It was found that the LT-AlN layer of the two-step buffer played a key role in reduction of anisotropy of the GaN film grown.
关键词
Keywords
references
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