纳米硅粒子的表面氧化及其光致发光特性

于威; 徐焕钦; 徐艳梅; 王新占; 路万兵; 傅广生

doi:10.3788/fgxb20113204.0347

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纳米硅粒子的表面氧化及其光致发光特性

材料合成及性能研究 | 更新时间：2020-08-12

- 纳米硅粒子的表面氧化及其光致发光特性
- Surface Oxidation and Photoluminescence Properties of Silicon Nanoparticle
- 发光学报 2011年32卷第4期页码：347-352
- 作者机构：
  
  河北大学物理科学与技术学院,河北保定,071002
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60878040,60940020)资助项目()
- DOI：10.3788/fgxb20113204.0347
  中图分类号： O469;O482.31
- 收稿日期：2011-01-10，
  
  修回日期：2011-02-12，
  
  网络出版日期：2011-04-22，
  
  纸质出版日期：2011-04-22
- 稿件说明：
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于威, 徐焕钦, 徐艳梅, 王新占, 路万兵, 傅广生. 纳米硅粒子的表面氧化及其光致发光特性[J]. 发光学报, 2011,32(4): 347-352

YU Wei, XU Huan-qin, XU Yan-mei, WANG Xing-zhan, LU Wan-bing, FU Guang-sheng. Surface Oxidation and Photoluminescence Properties of Silicon Nanoparticle[J]. Chinese Journal of Luminescence, 2011,32(4): 347-352
于威, 徐焕钦, 徐艳梅, 王新占, 路万兵, 傅广生. 纳米硅粒子的表面氧化及其光致发光特性[J]. 发光学报, 2011,32(4): 347-352 DOI： 10.3788/fgxb20113204.0347.

YU Wei, XU Huan-qin, XU Yan-mei, WANG Xing-zhan, LU Wan-bing, FU Guang-sheng. Surface Oxidation and Photoluminescence Properties of Silicon Nanoparticle[J]. Chinese Journal of Luminescence, 2011,32(4): 347-352 DOI： 10.3788/fgxb20113204.0347.

摘要

采用射频等离子体增强化学气相沉积技术制备了纳米晶硅粒子

并对其溶液发光的稳态和瞬态特性进行了研究。稳态光致发光结果显示

新制备的纳米硅粉体表现为峰值位于440 nm附近的蓝色发光

经长时间氧化后

该波段发光强度显著增强

并且出现另一峰值位于750 nm附近的红色发光带。不同波长激发和时间分辨光致发光谱的分析表明

纳米硅粒子蓝色发光归因于粒子内部载流子的带-带跃迁过程

衰减时间在纳秒量级

氧化造成该波段发光衰减时间常数增加。氧化后出现的红色发光来源于载流子经由表面缺陷态的辐射复合

该发光衰减寿命微秒量级。

Abstract

The silicon nanoparticle have been grown by radio-frequency plasmas-enhanced chemical vapor deposition technique and the photoluminescence(PL)of the silicon suspension have been studied by both steady-state and time-resolved photoluminescence spectra. The steady-state PL spectra of the silicon suspension show that a blue PL band around 440 nm is found for the as-prepared silicon suspension emits. An increase of the intensity for the blue band around 440 nm followed by a red photoluminescence centered at 750 nm after storing the suspension for two months. The steady-state PL spectra excited by different wavelength and time-resolved PL spectra of the samples demonstrate that the blue PL band with a delaytime of nanosecond order is caused by the band-to-band recombination in Si nanocrystals. The oxidation of the silicon nanoparticle causes the decaytime increasing. The red PL band originates from radiation recombination of carries via defect/surface-related states and the delay-time of which is on the order of microsecond.

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references

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