970nm反射式垂直腔半导体光放大器的设计与制作

孙成林; 田振华; 贾丽华; 曹军胜; 秦莉; 郜峰利; 宁永强; 王立军

doi:10.3788/fgxb20113201.0053

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970nm反射式垂直腔半导体光放大器的设计与制作

器件制备及器件物理 | 更新时间：2020-08-12

- 970nm反射式垂直腔半导体光放大器的设计与制作
- Design and Fabrication of 970 nm Reflection-mode Vertical Cavity Semiconductor Optical Amplifiers
- 发光学报 2011年32卷第1期页码：53-57
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春,130033
  2. 吉林大学物理学院, 吉林长春 130023
  3. 吉林大学电子科学与工程学院集成光电子学国家重点联合实验室吉林大学实验区,吉林长春,130012
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10774057)();吉林省科技厅项目(20090534)();集成光电子学国家重点联合实验室开放课题(IOSKL-KF200908)资助项目()
- DOI：10.3788/fgxb20113201.0053
  中图分类号： TN248.4
- 收稿日期：2010-04-28，
  
  修回日期：2010-07-08，
  
  网络出版日期：2011-01-22，
  
  纸质出版日期：2011-01-22
- 稿件说明：
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孙成林, 田振华, 贾丽华, 曹军胜, 秦莉, 郜峰利, 宁永强, 王立军. 970nm反射式垂直腔半导体光放大器的设计与制作[J]. 发光学报, 2011,32(1): 53-57

SUN Cheng-lin, TIAN Zhen-hua, JIA Li-hua, CAO Jun-sheng, QIN Li, GAO Feng-li, NING Yong-qiang, WANG Li-jun. Design and Fabrication of 970 nm Reflection-mode Vertical Cavity Semiconductor Optical Amplifiers[J]. Chinese Journal of Luminescence, 2011,32(1): 53-57
孙成林, 田振华, 贾丽华, 曹军胜, 秦莉, 郜峰利, 宁永强, 王立军. 970nm反射式垂直腔半导体光放大器的设计与制作[J]. 发光学报, 2011,32(1): 53-57 DOI： 10.3788/fgxb20113201.0053.

SUN Cheng-lin, TIAN Zhen-hua, JIA Li-hua, CAO Jun-sheng, QIN Li, GAO Feng-li, NING Yong-qiang, WANG Li-jun. Design and Fabrication of 970 nm Reflection-mode Vertical Cavity Semiconductor Optical Amplifiers[J]. Chinese Journal of Luminescence, 2011,32(1): 53-57 DOI： 10.3788/fgxb20113201.0053.

摘要

设计并制作了970 nm反射式垂直腔半导体光放大器(VCSOA)

基于放大器结构

对放大器的噪声特性、增益和带宽特性进行了实验研究和理论分析。研究了反射式放大器的增益与垂直腔半导体激光器出光口径的关系

发现增益随着出光口径的增大而增大。对于970 nm的信号光

经过出光口径为400 m的VCSOA后

最高获得了26 dB的增益放大

带宽为25 GHz。理论计算的过剩噪声系数和实验值之间有较好的符合关系

当底面和顶面的反射率分别为0.99和0.98时

放大器的噪声因子为6.6。

Abstract

The 970 nm reflection-mode vertical cavity semiconductor optical amplifiers (VCSOA) were designed and fabricated. Based on the structure of VCSOA

the amplifier noise

gain and bandwidth characteristics were experimentally investigated and analyzed in the reflection mode. For a signal light of 970 nm

the maximum of gain amplification can reach to 26 dB after VCSOA. The bandwidth is 25 GHz when the gain is 26 dB. The noise factor is 6.6 when the bottom and top reflectivity is 0.99 and 0.98

respectively.

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Keywords

references

Bjorlin E S, Kimura T, Bowers E. Carrier-confined vertical-cavity semiconductor optical amplifier for higher gain and efficiency [J]. IEEE J. of Sel. Top. In Quantum Electronics, 2003, 9 (5):1374-1385.[2] Gonzalez-Marcos A P, Hurtado A. Martin-Pereda J A. Vertical-cavity semiconductor optical amplifiers (VCSOAs) as optical sensing elements [J]. SPIE, 2005, 5840 :262-271.[3] Hurtado A, Adams M J. Two-wavelength switching with 1 550 nm semiconductor laser amplifiers [J]. J. Optical Networking, 2007, 6 (5):434-441.[4] Xu Guocheng, Bai Zhifan, Li Yutian, et al. High-power laser switching power supply [J]. J. Jilin University(Enginee-ring and Technology Edition) (吉林大学学报,工学版), 2004, 34 (3):397-401 (in Chinese).[5] Ma Qiang, Tian Zhenhua, Wang Zhenful, et al. A theoretical model of high power VCSEL based on the thermal-offset-current [J]. Chin. J. Lumin. (发光学报), 2009, 30 (4):463-466 (in Chinese).[6] Liang Xuemei, Lu Jinkai, Cheng Liwen, et al. Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm [J]. Chin. J. Lumin. (发光学报), 2010, 31 (1):79-85 (in English).[7] Tombling C, Saitoh T, Mukai T, et al. Performance predictions for vertical-cavity semiconductor laser amplifiers [J].IEEE J. Quantum Electron., 1994, 30 (11):2491-2499.[8] Karlsson A, HSijer M. Analysis of a VCLAD: Vertical-cavity laser amplifier detector [J]. IEEE Photonics Technology Letters, 1995, 7 (11):1336-1338.[9] Piprek J, Bjorlin E S, Bowers J E. Optical gain-bandwidth product of vertical-cavity laser amplifiers [J]. Electronics Lett., 2001, 37 (5):298-299.[10] Marino F, Balle S. Experimental study of a broad area vertical-cavity semiconductor optical amplifier [J]. Optics Communications, 2004, 231 (1-6):325-330.[11] Staffan B E, Riou B, Abraham P, et al. Long wavelength vertical-cavity semiconductor optical amplifiers [J]. IEEE J. of Quantum Electronics, 2001, 37 (2):274-281.[12] Clark A H, Calvez S, Laurand N, et al. Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers [J]. IEEE J. of Quantum Electronics, 2004, 40 (7):878-883.[13] Cole G D, Bjorlin E Staffan, Chen Qi, et al. MEMS-tunable vertical-cavity SOAs [J]. IEEE J. of Quantum Electronics, 2005, 41 (3):390-407.[14] Zhao Zheng, Pan Wei, Luo Bin, et al. Theoretical analyses of semiconductor optical amplifiers based on vertical cavity resonator [J]. Acta Photonica Sinica (光子学报), 2004, 33 (12):1421-1424 (in Chinese).[15] Xu Jiangheng, Luo Bin, Pan Wei, et al. Optimal design of the gain bandwidth of vertical-cavity semiconductor optical amplifiers based on the couple cavities [J]. Laser Technology (激光技术), 2006, 30 (1):60-63 (in Chinese).[16] Wang Gang, Luo Bin, Pan Wei. Study on optical bandwidth characteristic of vertical cavity semiconductor optical amplifiers [J]. Laser Technology (激光技术), 2007, 31 (2):137-140 (in Chinese).[17] Wang Gang, Luo Bin, Pan Wei. Frequency response characteristics of vertical cavity semiconductor optical amplifier [J]. Semiconductor Optoelectronics (半导体光电), 2007, 28 (1):27-29 (in Chinese).[18] Yamamoto Y. Noise and error rate performance of semiconductor laser amplifiers in PCM-IM optical transmission systems [J]. IEEE J. Quantum Electronics, 1980, 16 (10):1073-1081.[19] Mukai T, Yamamoto Y, Kimura T. S/N and error rate performance in AlGaAs semiconductor laser amplifier and linear repeat systems [J]. IEEE Trans. Microwave Theory Technology, 1982, 30 (10):1548-1556.

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