Fe3O4p型掺杂对有机电致发光器件性能的提高

张丹丹; 刘磊石; 陈路; 王海; 刘式墉; 冯晶

doi:10.3788/fgxb20113201.0042

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Fe₃O₄p型掺杂对有机电致发光器件性能的提高

器件制备及器件物理 | 更新时间：2020-08-12

- Fe₃O₄p型掺杂对有机电致发光器件性能的提高
- Improvement of The Performances of Organic Light-emitting Devices Using Fe₃O₄ as p-dopant
- 发光学报 2011年32卷第1期页码：42-46
- 作者机构：
  
  1. 吉林大学电子科学与工程学院集成光电子学国家重点联合实验室, 吉林长春 130012
  2. 江阴新顺微电子有限公司, 江苏江阴,214431
- 作者简介：
- 基金信息：
  
  国家自然科学基金面上项目(60877019)资助()
- DOI：10.3788/fgxb20113201.0042
  中图分类号： TN383.1
- 收稿日期：2010-04-06，
  
  修回日期：2010-06-07，
  
  网络出版日期：2011-01-22，
  
  纸质出版日期：2011-01-22
- 稿件说明：
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张丹丹, 刘磊石, 陈路, 王海, 刘式墉, 冯晶. Fe3O4p型掺杂对有机电致发光器件性能的提高[J]. 发光学报, 2011,32(1): 42-46

ZHANG Dan-dan, LIU Lei-shi, CHEN Lu, WANG Hai, LIU Shi-yong, FENG Jing. Improvement of The Performances of Organic Light-emitting Devices Using Fe3O4 as p-dopant[J]. Chinese Journal of Luminescence, 2011,32(1): 42-46
张丹丹, 刘磊石, 陈路, 王海, 刘式墉, 冯晶. Fe3O4p型掺杂对有机电致发光器件性能的提高[J]. 发光学报, 2011,32(1): 42-46 DOI： 10.3788/fgxb20113201.0042.

ZHANG Dan-dan, LIU Lei-shi, CHEN Lu, WANG Hai, LIU Shi-yong, FENG Jing. Improvement of The Performances of Organic Light-emitting Devices Using Fe3O4 as p-dopant[J]. Chinese Journal of Luminescence, 2011,32(1): 42-46 DOI： 10.3788/fgxb20113201.0042.

摘要

将金属氧化物Fe

在空穴传输材料中进行p型掺杂并制作有机电致发光器件

使器件的开启电压由5 V降至2.5 V;20 mA/cm

电流密度下的功率效率由1.2 lm/W提高到2.0 lm/W;10 V下的亮度由1 680 cd/m

提高到30 590 cd/m

。紫外-可见-红外吸收光谱及紫外光电子能谱的测试分析结果表明

p型掺杂剂的引入不仅能够提高器件的空穴传输能力

而且使空穴的注入势垒降低了0.37 eV

从而可制作出低驱动、高效率、高亮度的有机电致发光器件的制作。

Abstract

This paper reports a high performances Fe

doped organic light emitting devices (OLEDs). The tris-(8-hydroxyquinoline) aluminum (Alq

)-based OLEDs with Fe

doped N

N '-diphenyl - N

N'-bis (1

1'-biphenyl)-4

4'-diamine (NPB) exhibit a very low turn-on voltage of 2.5 V

and a high luminance of 30 590 cd/m

while the turn-on voltage is 5 V and the luminance is 1 680 cd/m

at 10 V for the undoped one. The power efficiency is increased from 1.2 lm/W to 2.0 lm/W at the current density of 20 mA/cm

by inserting the Fe

-doped NPB layer. The Fe

doping effects on the OLEDs are further clarified by analyzing the results of ultraviolet/visible/near-infrared absorption spectra and the characteristics on the hole-only devices. The improvements in device performances are attributed to the improved hole transport and conducti-vity through the formation of the charge transfer complex between Fe

and NPB. Results on the UV photo-electron spectroscopy studies reveal that the hole-injection barrier from ITO to NPB is reduced by 0.37 eV by introducing the doped layer NPB ∶ Fe

. This enhances the hole injection and decreases the driving voltage

resulting a higher power efficiency. Therefore

the power consumption is lowered

and that good for prolonging the lifetime.

关键词

Keywords

references

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