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基于不同ZnSe壳层厚度的InP/ZnSe/ZnS量子点光电性能
增强出版Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses
- 发光学报 2022年43卷第4期 页码：501-508
- 作者机构：
福州大学 物理与信息工程学院，福建 福州 350108
- 作者简介：
[ "陈祥(1997-)，男，河南驻马店人，硕士研究生，2019年于泉州师范学院获得学士学位，主要从事磷化铟量子点合成及其发光二极管制备的研究。E-mail: 466956846@qq.com" ]
[ "李福山(1978-)，男，福建莆田人，博士，研究员，博士生导师，2005 年于北京大学获得博士学位，主要从事纳米光电材料与器件的研究。 E-mail: fsli@fzu.edu.cn" ]
- 基金信息：国家自然科学基金(62075043)
DOI：10.37188/CJL.20220034
中图分类号： O482.31收稿：2022-01-24，
修回：2022-02-11，
纸质出版：2022-04-01
- 稿件说明：
移动端阅览
陈祥, 赵浩兵, 罗芷琪, 等. 基于不同ZnSe壳层厚度的InP/ZnSe/ZnS量子点光电性能[J]. 发光学报, 2022,43(4):501-508.
Xiang CHEN, Hao-bing ZHAO, Zi-qi LUO, et al. Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses[J]. Chinese Journal of Luminescence, 2022, 43(4): 501-508.
陈祥, 赵浩兵, 罗芷琪, 等. 基于不同ZnSe壳层厚度的InP/ZnSe/ZnS量子点光电性能[J]. 发光学报, 2022,43(4):501-508. DOI： 10.37188/CJL.20220034.
Xiang CHEN, Hao-bing ZHAO, Zi-qi LUO, et al. Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses[J]. Chinese Journal of Luminescence, 2022, 43(4): 501-508. DOI： 10.37188/CJL.20220034.
摘要
磷化铟(InP)量子点(QDs)由于其不含重金属元素和出色的光电特性，在量子点发光二极管(QLED)领域引起了广泛关注。本文以ZnSe和ZnS作为壳层来制备绿色InP/ZnSe/ZnS QDs，通过调控ZnSe壳层的厚度得到不同发光性能的QDs。当Se粉与Zn(St)
2
的质量比为1∶15时，InP/ZnSe/ZnS QDs的荧光发射峰为522 nm，半峰宽为45 nm，荧光量子效率高达86%。同时制备了基于不同ZnSe壳层厚度的QLED，并利用真空蒸发的方式去除QDs薄膜中残留的有机溶剂，避免了高温退火对QDs性能的破坏，最终得到稳定工作QLED器件，其最佳外量子效率为2.2%。
Abstract
Indium phosphide(InP) quantum dots(QDs) have drawn much attention in quantum dots light-emitting diodes(QLED) owing to their heavy-metal-free components and outstanding optics and electricity properties. In this paper
green InP/ZnSe/ZnS QDs were prepared with ZnSe and ZnS as the shell layers
QDs with various luminescence properties obtained by regulating the thickness of the ZnSe shell layer. When the mass ratio of Se powder to Zn(St)
2
is 1∶15
the PL peak of InP/ZnSe/ZnS QDs is 522 nm
the half-peak width is 45 nm and the PLQY is as high as 86%. QLED based on different thicknesses of ZnSe shell layers was prepared
the residual organic solvent in the QDs films was removed by vacuum evaporation to avoid the destruction of QDs performance by high temperature annealing
and the best EQE of 2.2% was obtained for the QLED devices.
关键词
Keywords
references
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