基于电场调控的高性能紫外无机-有机复合结构光电探测器

王建彬; 唐孝生; 周笔; 曾夏辉; 余华梁; 周赢武

doi:10.37188/CJL.20210317

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基于电场调控的高性能紫外无机-有机复合结构光电探测器

器件制备及器件物理 | 更新时间：2022-01-14

- 基于电场调控的高性能紫外无机-有机复合结构光电探测器
  增强出版
- High-performance Ultraviolet Inorganic-organic Composite Structure Photodetectors Based on Electric Field Control
- 发光学报 2022年43卷第1期页码：103-109
- 作者机构：
  
  1.闽江学院　物理与电子信息工程学院，福建　福州　350108
  2.重庆邮电大学　光电工程学院，重庆　400065
- 作者简介：
  
  [ "王建彬(1983-)，男，福建福州人，博士，讲师，2019年于中国科学院福建物质结构研究所获得博士学位，主要从事有机光电材料与器件的研究。E-mail: wangjianbinnewlife@foxmail.com" ]
- 基金信息：
  
  福建省教育厅项目(JAT200428);福建省自然科学基金(2018J01420)
- DOI：10.37188/CJL.20210317
  中图分类号： TN304
- 收稿日期：2021-10-14，
  
  修回日期：2021-10-25，
  
  纸质出版日期：2022-01
- 稿件说明：
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王建彬, 唐孝生, 周笔, 等. 基于电场调控的高性能紫外无机-有机复合结构光电探测器[J]. 发光学报, 2022,43(1):103-109.

Jian-bin WANG, Xiao-sheng TANG, Bi ZHOU, et al. High-performance Ultraviolet Inorganic-organic Composite Structure Photodetectors Based on Electric Field Control[J]. Chinese journal of luminescence, 2022, 43(1): 103-109.
王建彬, 唐孝生, 周笔, 等. 基于电场调控的高性能紫外无机-有机复合结构光电探测器[J]. 发光学报, 2022,43(1):103-109. DOI： 10.37188/CJL.20210317.

Jian-bin WANG, Xiao-sheng TANG, Bi ZHOU, et al. High-performance Ultraviolet Inorganic-organic Composite Structure Photodetectors Based on Electric Field Control[J]. Chinese journal of luminescence, 2022, 43(1): 103-109. DOI： 10.37188/CJL.20210317.

摘要

通过溶液旋涂制备了结构为ITO/ZnO/P3HT∶ITIC/Ag的紫外无机-有机复合结构光电探测器，混合膜中聚合物给体(P3HT)和非富勒烯小分子受体(ITIC)的质量比为100∶1。由于载流子传输通道不连续，器件在零偏压下的暗电流密度很小，为5.8×10

-10

A·cm

-2

，为器件实现外加电场可调和光电流倍增提供了条件。在正向偏压作用下，氧化锌(ZnO)界面层能吸收紫外光产生自由电子和空穴参与载流子输运(减少载流子复合几率)，从而提升器件的外量子效率(EQE)。随正向偏压的增加，ZnO界面层能够与活性层(P3HT∶ITIC)共同作用使器件的光电流倍增。45 V偏压下，器件在350 nm处可获得最小半高宽约为49 nm的EQE光谱响应峰，最高EQE、响应度和探测灵敏度分别为420000%、1 185 A·W

-1

和1.8×10

Jones。上述结果为制备基于电场调控的高性能紫外窄带无机-有机复合结构光电探测器提供了有效策略。

Abstract

The ultraviolet inorganic-organic composite structure photodetectors with an architecture of ITO/ZnO/P3HT∶ITIC/Ag were fabricated by a solution spin-coating method. In the blended film

the weight ratio of polymer donor(P3HT) to non-fullerene small molecule acceptor(ITIC) is 100∶1. Due to the discontinuity of carrier transport-channel

the dark current density of devices under zero bias voltage is very small(5.8×10

-10

A·cm

-2

)

which provides the condition for devices to realize the external electric-field adjustable and photocurrent multiplied. Under forward bias voltages

the free electrons and holes generated by the zinc oxide(ZnO) interfacial layer through absorbing ultraviolet light can participate in carrier transport(reducing the probability of carrier recombination)

thereby improving the external quantum efficiency(EQE) of devices. With the increase of forward bias voltages

ZnO interfacial layer can work together with active layer(P3HT∶ITIC) to multiply the photocurrent of devices. Under 45 V bias

the EQE spectral response-peak with a minimum half height width of about 49 nm can be obtained by devices at 350 nm

with the highest EQE

responsivity and detectivity of 420000%

1 185 A·W

-1

and 1.8×10

Jones

respectively. The above content provides an effective strategy to fabricate high-performance ultraviolet narrowband inorganic-organic composite structure photodetectors based on electric-field adjustment.

关键词

Keywords

references

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