带有非吸收窗口的高性能InGaAs/AlGaAs量子阱激光二极管

刘翠翠; 林楠; 马骁宇; 井红旗; 刘素平

doi:10.37188/CJL.20210306

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带有非吸收窗口的高性能InGaAs/AlGaAs量子阱激光二极管

器件制备及器件物理 | 更新时间：2022-01-14

- 带有非吸收窗口的高性能InGaAs/AlGaAs量子阱激光二极管
  增强出版
- High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window
- 发光学报 2022年43卷第1期页码：110-118
- 作者机构：
  
  1.中国原子能科学研究院　核物理所，北京　102413
  2.国防科技工业抗辐照应用技术创新中心，北京　102413
  3.中国科学院半导体研究所　光电子器件国家工程中心，北京　100083
  4.中国科学院大学，北京　100049
- 作者简介：
  
  刘翠翠(1993-)，女，河北沧州人，博士，助理研究员，2020年于中国科学院半导体研究所获得博士学位，主要从事高功率半导体激光二极管、半导体器件可靠性分析等方面的研究。E-mail: sissiliu2020@163.com.
  林楠(1986-)，男，陕西渭南人，硕士，助理研究员，2012年于西安理工大学获得硕士学位，主要从事高功率半导体激光二极管及其组件的研究。E-mail: linnan@semi.ac.cn
  马骁宇(1963-)，男，吉林延吉人，硕士，研究员，博士生导师，1987年于吉林大学获得硕士学位，主要从事材料生长、高功率半导体激光二极管阵列及其组件的研究。E-mail: maxy@semi.ac.cn.
- 基金信息：
  
  国家自然科学基金(11690044);国家重点研发计划(2018YFB1107300)
- DOI：10.37188/CJL.20210306
  中图分类号： TP248.4;TH314⁺.3
- 收稿：2021-09-22，
  
  修回：2021-10-11，
  
  纸质出版：2022-01
- 稿件说明：
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刘翠翠, 林楠, 马骁宇, 等. 带有非吸收窗口的高性能InGaAs/AlGaAs量子阱激光二极管[J]. 发光学报, 2022,43(1):110-118.

Cui-cui LIU, Nan LIN, Xiao-yu MA, et al. High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window[J]. Chinese Journal of Luminescence, 2022, 43(1): 110-118.
刘翠翠, 林楠, 马骁宇, 等. 带有非吸收窗口的高性能InGaAs/AlGaAs量子阱激光二极管[J]. 发光学报, 2022,43(1):110-118. DOI： 10.37188/CJL.20210306.

Cui-cui LIU, Nan LIN, Xiao-yu MA, et al. High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window[J]. Chinese Journal of Luminescence, 2022, 43(1): 110-118. DOI： 10.37188/CJL.20210306.

摘要

为了解决限制近红外单发射区InGaAs/AlGaAs量

子阱半导体激光二极管失效阈值功率提升的腔面光学灾变损伤问题，研制了一种带有Si杂质诱导量子阱混杂非吸收窗口的新型激光二极管，并对其性能进行了测试分析。首先，对于带有非吸收窗口的二极管，在其谐振腔上方前后腔面附近的窗口区域覆盖50 nm Si/100 nm SiO

组合介质层，在远离腔面的增益区域覆盖50 nm Si/100 nm TiO

组合介质层，并采用875 ℃/90 s快速热处理工艺促进Si杂质扩散诱导量子阱混杂并去除非辐射复合中心。然后，基于相同外延结构、相同流片工艺制备了无非吸收窗口的激光二极管作对照组。测试结果显示，带有非吸收窗口的新型激光二极管平均峰值输出功率提升约33.6%，平均峰值输出电流提升约50.4%，腔面光学灾变损伤的发生概率和破坏程度均明显降低，且其阈值电流、斜率效率及半高全宽等特性也无任何退化。该研究证明，采用Si杂质诱导量子阱混杂技术制备的非吸收窗口，对近红外单发射区InGaAs/AlGaAs量子阱半导体激光二极管腔面光学灾变损伤有明显的抑制效果。

Abstract

In order to solve catastrophic optical mirror damage(COMD)

the problem of limiting the output power of near-infrared single-emitting InGaAs/AlGaAs quantum well semiconductor laser diodes(LD)

a new-typed LD with a non-absorption window(NAW) based on Si impurity induced quantum well intermixing(QWI) technology was designed and fabricated

and its performance is tested and analyzed. Firstly

for the diode with NAW

a 50 nm Si/100 nm SiO

composite dielectric layer is covered in the window region near the front and rear cavity surfaces above the cavity

and a 50 nm Si/100 nm TiO

composite dielectric layer is covered in the gain region far away from the cavity surface. A rapid thermal annealing(RTA) process of 875 ℃/90 s is used to promote Si impurity diffusion induces QWI and remove non-radiation recombination centers. Then

based on the same epitaxial structure and preparation process

the traditional LD without NAW is prepared as the control group. Finally

the test results show that the catastrophic failure threshold power and the catastrophic failure threshold current of the new LD with NAW increase about 33.6% and 50.4%

respectively

and the occurrence probability and damage degree of COMD of the new LD are significantly reduced. Moreover

there is no degradation of the characteristics of threshold current

slope efficiency and full width half maximum of the new LD. This study proves that the NAW prepared by Si impurity induced QWI technology has a signif

icant suppression effect on the COMD of near-infrared single-emitting InGaAs/AlGaAs quantum well semiconductor LD.

关键词

Keywords

references

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