Si掺杂对GaAs纳米线发光特性的影响

李想; 亢玉彬; 唐吉龙; 方铉; 房丹; 李科学; 王登魁; 林逢源; 楚学影; 魏志鹏

doi:10.37188/CJL.20210059

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Si掺杂对GaAs纳米线发光特性的影响

材料合成及性能 | 更新时间：2021-05-20

- Si掺杂对GaAs纳米线发光特性的影响
- Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires
- 发光学报 2021年42卷第5期页码：629-634
- 作者机构：
  
  1.长春理工大学　高功率半导体激光国家重点实验室，吉林　长春　 130022
  2.长春理工大学　理学院，吉林　长春　 130022
- 作者简介：
  
  [ "李想(1994-)，男，吉林榆树人，硕士研究生,2016年于大连民族大学获得学士学位，主要从事半导体材料表征方面的研究。E-mail: 416944265@qq.com" ]
  [ "唐吉龙(1977-)，男，吉林长春人，博士，副研究员，博士研究生导师,2011年于长春理工大学获得博士学位，主要从事半导体材料外延生长与器件方面的研究。E-mail: jl_tangcust@163.com" ]
- 基金信息：
  
  国家自然科学基金(61674021;11674038;61704011;61904017;11804335;12074045);吉林省教育厅项目(JJKH20200763KJ)
- DOI：10.37188/CJL.20210059
  中图分类号： O472⁺.3
- 收稿日期：2021-02-09，
  
  修回日期：2021-02-20，
  
  纸质出版日期：2021-05-01
- 稿件说明：
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李想, 亢玉彬, 唐吉龙, 等. Si掺杂对GaAs纳米线发光特性的影响[J]. 发光学报, 2021,42(5):629-634.

Xiang LI, Yu-bin KANG, Ji-long TANG, et al. Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires[J]. Chinese journal of luminescence, 2021, 42(5): 629-634.
李想, 亢玉彬, 唐吉龙, 等. Si掺杂对GaAs纳米线发光特性的影响[J]. 发光学报, 2021,42(5):629-634. DOI： 10.37188/CJL.20210059.

Xiang LI, Yu-bin KANG, Ji-long TANG, et al. Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires[J]. Chinese journal of luminescence, 2021, 42(5): 629-634. DOI： 10.37188/CJL.20210059.

摘要

采用分子束外延技术(MBE)在Si(111)衬底上生长了非掺杂和Si掺杂砷化镓(GaAs)纳米线(NWs)。通过扫描电子显微镜(SEM)证实了生长样品的一维性;通过X射线衍射(XRD)测试和拉曼光谱(Raman)证实了掺杂GaAs纳米线中Si的存在;通过光致发光(PL)研究了非掺杂和Si掺杂GaAs纳米线的发光来源，掺杂改变了GaAs纳米线的辐射复合机制。掺杂导致非掺杂纳米线中自由激子发光峰和纤锌矿/闪锌矿(WZ/ZB)混相结构引起的缺陷发光峰消失。

Abstract

Undoped and Si-doped gallium arsenide(GaAs) nanowires(NWs) were carried out on Si(111) substrates by molecular beam epitaxy(MBE). The one-dimensional properties of the nanowires were confirmed by scanning electron microscopy(SEM).The presence of Si in doped GaAs NWs was confirmed by X-ray diffraction(XRD) and Raman spectroscopy. The luminescence source of undoped and Si doped GaAs NWs was studied by photoluminescence(PL). The PL results showed that doping changed the radiation recombination mechanism of GaAs NWs. Compared with undoped NWs

the doping results that in the free exciton emission peak and the defect-related emission peak of wurtzite and zinc blende mixed structure disappear simultaneously.

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