GaN基光栅的干法刻蚀工艺

郭孝浩; 胡磊; 任霄钰; 吴思; 张立群; 张志军; 杨辉; 刘建平

doi:10.37188/CJL.20210037

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GaN基光栅的干法刻蚀工艺

发光产业及技术前沿 | 更新时间：2021-06-18

- GaN基光栅的干法刻蚀工艺
- Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching
- 发光学报 2021年42卷第6期页码：889-895
- 作者机构：
  
  1.上海大学材料科学与工程学院, 上海　 200444
  2.中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室, 江苏苏州　 215123
- 作者简介：
  
  [ "郭孝浩(1996-)，男，河南信阳人，硕士研究生，2018年于江南大学获得学士学位，主要从事GaN基激光器器件与工艺的研究。E-mail: xhguo2019@sinano.ac.cn" ]
  [ "刘建平(1976-)，男，江西上饶人，博士，研究员，博士研究生导师，2004年于中国科学院半导体研究所获得博士学位，主要从事氮化物半导体材料与器件以及MOCVD外延生长的研究。E-mail:jpliu2010@sinano.ac.cn" ]
- 基金信息：
  
  国家重点研发计划(2017YFE0131500;2017YFB0405000);国家自然科学基金(61834008;61574160;61804164;61704184);中国博士后科学基金(2018M630619);江苏省自然科学基金(BK20180254)
- DOI：10.37188/CJL.20210037
  中图分类号： TN256
- 收稿：2021-01-23，
  
  修回：2021-02-18，
  
  纸质出版：2021-06-01
- 稿件说明：
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郭孝浩, 胡磊, 任霄钰, 等. GaN基光栅的干法刻蚀工艺[J]. 发光学报, 2021,42(6):889-895.

Xiao-hao GUO, Lei HU, Xiao-yu REN, et al. Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching[J]. Chinese Journal of Luminescence, 2021, 42(6): 889-895.
郭孝浩, 胡磊, 任霄钰, 等. GaN基光栅的干法刻蚀工艺[J]. 发光学报, 2021,42(6):889-895. DOI： 10.37188/CJL.20210037.

Xiao-hao GUO, Lei HU, Xiao-yu REN, et al. Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching[J]. Chinese Journal of Luminescence, 2021, 42(6): 889-895. DOI： 10.37188/CJL.20210037.

摘要

研究了基于BCl

/Cl

电感耦合等离子体(ICP)刻蚀对氮化镓基分布式反馈激光器中光栅的刻蚀，详细研究了刻蚀气体BCl

/Cl

流量比和压强对刻蚀台面侧壁的粗糙度、陡直度以及刻蚀速率的影响，发现以SiO

作为硬掩膜，刻蚀速率、台面侧壁粗糙度以及陡直度随着刻蚀气体BCl

/Cl

流量比以及压强变化有着显著变化。保持ICP功率和射频功率分别为300 W和100 W，当刻蚀气体BCl

/Cl

流量比为1、压强为1.33 Pa(10 mTorr)，最终得到200.6 nm/min的可控刻蚀速率、倾角85.3°且光滑的台面侧壁，实现了在保证光栅侧壁光滑的同时提升侧壁倾角。陡直且光滑的光栅对于提升氮化镓基分布式反馈激光器的器件性能及其稳定性非常重要。

Abstract

Inductively coupled plasma(ICP) etching parameters for GaN grating fabrication are investigated. The effects of etch parameters

including the etching gas BCl

/Cl

flow ratio and pressure

on the roughness and steepness of the mesa sidewall and etching rate are discussed. It is found that by using SiO

as the hard mask

the roughness and steepness of the etching mesa sidewall was greatly influenced by the etching parameters. A controllable etching rate of 200.6 nm/min

angle of 85.3° and smooth mesa sidewall are obtained using BCl

/Cl

ratio of 1∶1

1.33 Pa(10 mTorr) pressure

ICP power of 300 W and RF power of 100 W. Finally

the angle of the sidewall is increased while ensuring the smooth sidewall of the grating. Steep and smooth gratings are very important for improving the device performance and stability of GaN-based distributed feedback laser diode.

关键词

Keywords

references

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