二维WSe<sub>2</sub>场效应晶体管光电性能

夏风梁; 石凯熙; 赵东旭; 王云鹏; 范翊; 李金华

doi:10.37188/CJL.20200374

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二维WSe₂场效应晶体管光电性能

器件制备及器件物理 | 更新时间：2021-02-08

- 二维WSe₂场效应晶体管光电性能
- Optoelectronic Performance of 2D WSe₂ Field Effect Transistor
- 发光学报 2021年42卷第2期页码：257-263
- 作者机构：
  
  1.长春理工大学理学院, 吉林长春 130022
  2.中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室, 吉林长春 130033
- 作者简介：
  
  [ "夏风梁(1995－), 男, 黑龙江黑河人, 硕士研究生, 2018年于黑龙江科技大学获得学士学位, 主要从事半导体微纳米结构探测器件的研究。E-mail:1172323231@qq.com" ]
  [ "李金华(1977－), 女, 吉林柳河人, 博士, 教授, 博士研究生导师, 2006年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要从事纳米光电功能材料与器件的研究。E-mail:jhli_cust@edu.com" ]
- 基金信息：
  
  教育部"111"创新引智项目(D17017);吉林省科技发展计划(202002040JC);吉林省科技发展计划(20200201266JC);吉林省科技发展计划(20200201271JC)
- DOI：10.37188/CJL.20200374
  中图分类号： TN386
- 收稿：2020-12-07，
  
  录用：2021-1-4，
  
  纸质出版：2021-02
- 稿件说明：
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夏风梁, 石凯熙, 赵东旭, 等. 二维WSe₂场效应晶体管光电性能[J]. 发光学报, 2021,42(2):257-263.

Feng-liang XIA, Kai-xi SHI, Dong-xu ZHAO, et al. Optoelectronic Performance of 2D WSe₂ Field Effect Transistor[J]. Chinese Journal of Luminescence, 2021, 42(2): 257-263.
夏风梁, 石凯熙, 赵东旭, 等. 二维WSe₂场效应晶体管光电性能[J]. 发光学报, 2021,42(2):257-263. DOI： 10.37188/CJL.20200374.

Feng-liang XIA, Kai-xi SHI, Dong-xu ZHAO, et al. Optoelectronic Performance of 2D WSe₂ Field Effect Transistor[J]. Chinese Journal of Luminescence, 2021, 42(2): 257-263. DOI： 10.37188/CJL.20200374.

摘要

自石墨烯被发现以来，随着人们不断的研究和探索，越来越多具有类似结构的二维材料因其优异的光电性质相继被发现和研究。过渡金属硫族化合物（TMDs）因其丰富的物理性质而受到广泛关注。本文研究了三层二硒化钨（WSe

）纳米片的光电性能。利用范德华力将WSe

转移到SiO

/Si衬底的Au电极上，用银浆引出背栅电极，制备了WSe

场效应晶体管，其载流子迁移率为3.42 cm

/（V·s）。WSe

场效应晶体管在630 nm波长下探测器响应度为0.61 A/W，器件的光响应恢复时间为1 900 ms。

Abstract

Since the graphene was found

with the continuous research and exploration by people

more and more two-dimensional materials with similar structures have been discovered and studied successively due to their excellent photoelectrical properties. The widespread attention is paid to the transition metal dichaldogenides(TMDs) due to their rich physical properties. This paper researches the two-dimensional three-layer WSe

photoelectric property

and transfers it to the Au electrode of SiO

/Si substrate by Van Der Waals force. Finally

the silver paste is used to extract the back gate electrode with WSe

field effect transistor manufactured

whose carrier mobility is 3.42 cm

/(V·s). The detector response ratio of the WSe

field effect transistor based on the 630 nm wavelength is 0.61 A/W and the light response recovery time is 1 900 ms.

关键词

Keywords

references

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二维WSe2场效应晶体管光电性能

Optoelectronic Performance of 2D WSe2 Field Effect Transistor

DOI：10.37188/CJL.20200374

摘要

Abstract

关键词

Keywords

references

二维WSe₂场效应晶体管光电性能

Optoelectronic Performance of 2D WSe₂ Field Effect Transistor