微量MgO掺杂对GAGG：Ce晶体光学和闪烁性能的影响

祁强; 孟猛; 丁栋舟; 赵书文; 施俊杰; 任国浩

doi:10.37188/CJL.20200331

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微量MgO掺杂对GAGG：Ce晶体光学和闪烁性能的影响

材料合成及性能 | 更新时间：2021-01-12

- 微量MgO掺杂对GAGG：Ce晶体光学和闪烁性能的影响
- Effects of Trace MgO Addition on Optical and Scintillation Properties of GAGG:Ce Crystal
- 发光学报 2021年42卷第1期页码：28-36
- 作者机构：
  
  1.上海理工大学材料科学与工程学院, 上海 200093
  2.中国科学院上海硅酸盐研究所, 上海 201899
  3.中国科学院大学材料与光电研究中心, 北京 100049
  4.南京航空航天大学航天学院, 江苏南京 210016
  5.中国科学院海西创新研究院, 福建福州 350002
- 作者简介：
  
  [ "祁强(1993-), 男, 河南信阳人, 硕士硕究生, 2018年于许昌学院获得学士学位, 主要从事Gd3(Ga, Al)5O12:Ce晶体生长与慢分量抑制的研究。E-mail:182442559@st.usst.edu.cn" ]
  [ "丁栋舟(1976-), 男, 安徽安庆人, 博士, 正高级工程师, 2014年于中国科学院大学获得博士学位, 主要从事性能稀土氧化物闪烁晶体的制备、结构、性能及器件应用的研究。E-mail:dongzhou_ding@mail.sic.ac.cn" ]
- 基金信息：
  
  国家自然科学基金(61675095);中科院上海硅酸盐研究所科技创新重点项目(Y74ZC5152G);海西研究院自主部署项目(FJCXY18040202);上海市科学技术委员会基金(20511107400);"中国科学院关键技术人才"项目(Y74YQ3130G)
- DOI：10.37188/CJL.20200331
  中图分类号： O782
- 收稿：2020-11-02，
  
  录用：2020-11-23，
  
  纸质出版：2021-01
- 稿件说明：
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祁强, 孟猛, 丁栋舟, 等. 微量MgO掺杂对GAGG：Ce晶体光学和闪烁性能的影响[J]. 发光学报, 2021,42(1):28-36.

Qiang QI, Meng MENG, Dong-zhou DING, et al. Effects of Trace MgO Addition on Optical and Scintillation Properties of GAGG:Ce Crystal[J]. Chinese Journal of Luminescence, 2021, 42(1): 28-36.
祁强, 孟猛, 丁栋舟, 等. 微量MgO掺杂对GAGG：Ce晶体光学和闪烁性能的影响[J]. 发光学报, 2021,42(1):28-36. DOI： 10.37188/CJL.20200331.

Qiang QI, Meng MENG, Dong-zhou DING, et al. Effects of Trace MgO Addition on Optical and Scintillation Properties of GAGG:Ce Crystal[J]. Chinese Journal of Luminescence, 2021, 42(1): 28-36. DOI： 10.37188/CJL.20200331.

摘要

共掺杂离子是优化晶体闪烁性能的重要手段之一，本文采用提拉法生长了GAGG：Ce和GAGG：Ce，0.1% Mg晶体。通过测试硬度、透过率、X射线激发发射（XEL）谱和符合时间分辨率等方法研究了微量MgO掺杂对GAGG：Ce光学及闪烁性能的影响。GAGG：Ce和GAGG：Ce，Mg的维氏硬度平均值分别为1 430 kg/mm

和1 420.4 kg/mm

，表明Mg

的掺杂几乎没有对GAGG：Ce的硬度产生影响。XEL谱结果表明，共掺杂Mg

后GAGG：Ce晶体的发光峰值波长约为540 nm，但5d

→

5/2

及5d

→

7/2

发射峰红移了12~24 nm，Mg

的引入可能改变了Ce

的5d

激发态向

5/2

和

7/2

跃迁几率分布。通过共掺杂Mg

，发现尽管光产额由5.8×10

lx/MeV（58 000 ph/MeV）降低为4.15×10

lx/MeV（41 500 ph/MeV），但GAGG：Ce，Mg符合时间分辨率得到了显著改善，达146 ps。此外，比较不同尺寸样品的光产额，发现GAGG：Ce，Mg对闪烁发光的自吸收程度小于GAGG：Ce。以上结果表明，微量MgO掺杂是优化GAGG：Ce晶体闪烁性能的有效途径。

Abstract

Ions' co-doping is one of the important means to optimize crystals' scintillation properties. In this work

GAGG:Ce and GAGG:Ce

0.1%Mg crystals were grown by Czochralski method. The effects of trace MgO on the optical and scintillation properties of GAGG:Ce were studied by measuring hardness

transmittance

X-ray excited luminescence(XEL) spectrum and time resolution. The average Vickers hardness of GAGG:Ce and GAGG:Ce

Mg is 1 430 kg/mm

and 1 420.4 kg/mm

respectively

which indicates that Mg

doping has little effect on the hardness of GAGG:Ce. Photoluminescence(PL) and XEL spectra show that the emission peak wavelength of GAGG:Ce and GAGG:Ce

Mg crystals is~540 nm. By Gaussian fitting the XEL spectrum

the emission peaks of 5d

→

5/2

and 5d

→

7/2

of GAGG:Ce

Mg are red-shifted 12~24 nm relative to GAGG:Ce

and the introduction of Mg

may change the transition probability distribution of Ce

from 5d

excited state to

5/2

and

7/2

. The light yields of GAGG:Ce and GAGG:Ce

Mg are 5.8×10

lx/MeV(58 000 ph/MeV) and 4.15×10

lx/MeV(41 500 ph/MeV)

respectively

but the coincidence time resolution of GAGG:Ce

Mg is significantly improved

up to 146 ps. In addition

comparing the light yield of samples of different sizes

the self-absorption degree of GAGG:Ce

Mg for scintillation luminescence is less than that of GAGG:Ce. The above results indicate that trace MgO doping is an effective way to improve the scintillation performance of GAGG:Ce crystals.

关键词

Keywords

references

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