MOCVD法制备Cu掺杂ZnO薄膜

许露; 梁红伟; 刘远达; 李春野; 柳阳; 边继明; 李国兴; 李万程; 吴国光; 杜国同

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MOCVD法制备Cu掺杂ZnO薄膜

器件制备及器件物理 | 更新时间：2020-08-12

- MOCVD法制备Cu掺杂ZnO薄膜
- Cu-doped ZnO Thin Film Prepared by Metallorganic Chemical Vapor Deposition
- 发光学报 2011年32卷第9期页码：956-961
- 作者机构：
  
  1. 大连理工大学物理与光电工程学院,辽宁大连,116024
  2. 吉林大学电子与信息工程学院集成光电子学国家重点联合实验室,吉林长春,130023
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60976010,10804040,10804014,60877020,11004020,601706045)();大连理工大学基本科研业务费(DUT
- DOI：
  中图分类号： O472.3;O482.31
- 收稿日期：2011-03-08，
  
  修回日期：2011-04-21，
  
  网络出版日期：2011-09-22，
  
  纸质出版日期：2011-09-22
- 稿件说明：
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许露, 梁红伟, 刘远达, 李春野, 柳阳, 边继明, 李国兴, 李万程, 吴国光, 杜国同. MOCVD法制备Cu掺杂ZnO薄膜[J]. 发光学报, 2011,32(9): 956-961

XU Lu, LIANG Hong-wei, LIU Yuan-da, LI Chun-ye, LIU Yang, BIAN Ji-ming, LI Guo-xing, LI Wan-cheng, WU Guo-guang, DU Guo-tong. Cu-doped ZnO Thin Film Prepared by Metallorganic Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2011,32(9): 956-961
许露, 梁红伟, 刘远达, 李春野, 柳阳, 边继明, 李国兴, 李万程, 吴国光, 杜国同. MOCVD法制备Cu掺杂ZnO薄膜[J]. 发光学报, 2011,32(9): 956-961 DOI：

XU Lu, LIANG Hong-wei, LIU Yuan-da, LI Chun-ye, LIU Yang, BIAN Ji-ming, LI Guo-xing, LI Wan-cheng, WU Guo-guang, DU Guo-tong. Cu-doped ZnO Thin Film Prepared by Metallorganic Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2011,32(9): 956-961 DOI：

摘要

通过金属有机物化学气相沉积(MOCVD)设备

在

-Al

衬底上生长本征和 Cu掺杂ZnO(ZnO:Cu)薄膜。X射线衍射(XRD)谱观察到未掺杂的ZnO和ZnO:Cu样品都呈现出较好的

轴择优取向生长。X射线光电子能谱(XPS)表明Cu已掺入到ZnO薄膜中。利用光致发光(PL)测试对本征ZnO和ZnO:Cu进行室温和低温PL测试

在ZnO:Cu样品的低温PL谱中观察到一个强度很强、范围很广的蓝紫光发射峰(Blue-violet发射峰

BV发射峰)

范围在2.8~3.3 eV之间

又进一步通过变温PL测试发现随着温度的升高

BV发射峰峰位发生红移

且80 K时BV发射峰高能边出现自由电子向受主能级(eA

)的跃迁发光

并计算了Cu受主离化能。

Abstract

Un-doped and Cu-doped ZnO thin films were grown on c-Al

substrate by metalorganic chemical vapor deposition (MOCVD) system. The way of changing the temperature of Cu(tmhd)

source bottle was used to change the saturated vapor pressure of Cu (tmhd)

in the meantime to change the quantity of Cu(tmhd)

carried into the the reaction chamber. Then the content of Cu in ZnO films was tested to study the effects of Cu doping on the luminescent properties of ZnO

and explore the process technique and condition of controlling Cu valence in ZnO films. X-ray diffraction (XRD) show un-doped ZnO and ZnO:Cu samples have good

-axis preferred orientation growth. The Cu content of these samples were measured by X-ray photoelectron spectroscopy (XPS). The content of Cu in ZnO films were not increased when the Cu(tmhd)

source temperature was increased

which indicated that increasing the Cu(tmhd)

source temperature did not lead to any increase of the Cu-doping level

and the solubility of Cu ions in ZnO is quite low. Low-temperature photoluminescence (PL) measurements show a strong and broad blue-violet (BV) light emission peak ranging from 2.8 to 3.3 eV

which could be assigned to donor-acceptor pair (DAP) recombination (between unknown shallow donor level and Cu-related acceptor level). Temperature dependent PL show a red-shift of the BV emission with increasing the temperature from 10 to 180 K

and a new weak shoulder peak appearing at BV emission's high-energy side at 80 K

which could be assigned to eA

. Moreover

the decrease of Cu content in ZnO:Cu film resulted in quenching the intensity of BV emission red-shift of BV emission's peak position. This phenomenon is interesting and rarely reported in the previous works. However

we still need further study to clarify that if it is the electron transition between Zn

-related donor energy level and valence band that causes the BV emission.

关键词

Keywords

references

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