Ce:LSO多晶薄膜的溶胶-凝胶法制备及其发光性能

沈思情; 许志斌; 马清; 谢建军; 施鹰; 袁晖; 熊巍

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Ce:LSO多晶薄膜的溶胶-凝胶法制备及其发光性能

材料合成及性能研究 | 更新时间：2020-08-12

- Ce:LSO多晶薄膜的溶胶-凝胶法制备及其发光性能
- Sol-gel Synthesis and Luminescence Properties of Ce:LSO Polycrystalline Films
- 发光学报 2011年32卷第9期页码：880-884
- 作者机构：
  
  1. 中国科学院上海硅酸盐研究所, 上海 200050
  2. 上海大学材料科学与工程学院电子信息材料系上海,200072
- 作者简介：
- 基金信息：
  
  上海市自然科学基金(10ZR1411400)();上海科委基础研究重点项目(9JC1406500)();上海市重点学科(S30107)();上海大学2011年度研究生创
- DOI：
  中图分类号： O484.4
- 收稿日期：2011-05-26，
  
  修回日期：2011-06-12，
  
  网络出版日期：2011-09-22，
  
  纸质出版日期：2011-09-22
- 稿件说明：
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沈思情, 许志斌, 马清, 谢建军, 施鹰, 袁晖, 熊巍. Ce:LSO多晶薄膜的溶胶-凝胶法制备及其发光性能[J]. 发光学报, 2011,32(9): 880-884

SHEN Si-qing, XU Zhi-bin, MA Qing, XIE Jian-jun, SHI Ying, YUAN Hui, XIONG Wei. Sol-gel Synthesis and Luminescence Properties of Ce:LSO Polycrystalline Films[J]. Chinese Journal of Luminescence, 2011,32(9): 880-884
沈思情, 许志斌, 马清, 谢建军, 施鹰, 袁晖, 熊巍. Ce:LSO多晶薄膜的溶胶-凝胶法制备及其发光性能[J]. 发光学报, 2011,32(9): 880-884 DOI：

SHEN Si-qing, XU Zhi-bin, MA Qing, XIE Jian-jun, SHI Ying, YUAN Hui, XIONG Wei. Sol-gel Synthesis and Luminescence Properties of Ce:LSO Polycrystalline Films[J]. Chinese Journal of Luminescence, 2011,32(9): 880-884 DOI：

摘要

采用Pechini 溶胶-凝胶法结合旋涂工艺在单晶硅(111)上制备了Ce

离子掺杂的硅酸镥(Lu

SiO

) 薄膜

利用热重差热分析(TG-DSC)、X射线衍射(XRD)、扫描电镜(SEM)、真空紫外光谱(VUV) 及椭偏(SE) 测试对Ce: Lu

SiO

薄膜的物相、形貌、发光性质和光学常数进行了表征。结果表明:薄膜样品从900 ℃开始晶化

1 100 ℃时晶化完全。薄膜表面均匀、平整、无裂纹。真空紫外激发光谱中存在较强的基质发射

发射光谱是一个350~500 nm 的宽带谱

宽带中心在400 nm左右。折射率、消光系数分别为1.82~1.94和0.005~0.05

厚度与SEM测试结果相一致。

Abstract

-doped lutetium oxyorthosilicate (Ce: Lu

SiO

) films have been fabricated on silicon (111) substrates by Pechini sol-gel method combined with the spin-coating technique. Thermogravimetry-differential scanning calorimetry (TG-DSC) analysis

X-ray diffraction (XRD)

Scanning Electron Microscopy (SEM)

PL (Photoluminescent) measurements under VUV as well as spectroscopic ellipsometry (SE) were used to characterize the resulting films. The results indicate that the Ce: Lu

SiO

films begin to crystallize at 900 ℃ and are completely crystallized at 1 100 ℃. The phosphor films are uniform

dense and crack-free. The VUV spectra show that the excitation is mainly host excited and the emission spectrum is a broad band centered at about 400 nm. The refractive index

the extinction of coefficient are 1.82~1.94 and 0.005~0.05

respectively

the thickness measured by spectroscopic ellipsometry is similar to that obtained by SEM.

关键词

Keywords

references

Melcher C L, Schweitzer J S. Lutetium orthosilicate single crystal scintillator detector: USA,4958080 . 1990-09-18.[2] Vaneijk C W E, Andriessen J, Dorenbos P, et al. Ce3+ doped inorganic scintillators [J]. Nucl. Instrum. Methods A, 1994, 348 (2-3):546-550.[3] Zorenko Y, Konstankevych I, Globus M, et al. New scintillation detectors based on oxide single crystal films for biological microtomograph [J]. Nucl. Instrum. Methods A, 2003, 505 (1-2):93-96.[4] Lee J K, Muenchausen R E, Lee J S, et al. Structure and optical properties of Lu2SiO5: Ce phosphor thin films [J]. Appl. Phys. Lett., 2006, 89 (10):101905-1-3.[5] Rack P D, Peak J D, Melcher C L, et al. Scanning electron and cathode luminescence imaging of thin film Lu2SiO5: Ce scintillating materials [J]. Appl. Phys. Lett., 2007, 91 (24):244102-1-3.[6] Rack P D, Peak J D, Melcher C L, et al. Scanning electron and cathode luminescence imaging of thin film Lu2SiO5: Ce scintillating materials [J]. Appl. Phys. Lett., 2007, 91 (24):244102-1-3.[7] Mansuy C, Mahiou R, Nedelec J M, et al. A new sol-gel route to (Lu2SiO5) LSO scintillator: powders and thin films [J]. Chem. Mater., 2003, 34 (46):3242-3244.[8] Mansuy C, Tomasella E, Mahiou R, et al. Surface characterization of sol-gel derived scintillating rare-earth doped Lu2SiO5 thin films [J]. J. Phys. Conf. Ser., 2008, 100 (1):012037-1-5.[9] Jia Lingchun, Gu Mu, Liu Xiaolin, et al. Preparation and luminescent properties of Lu2SiO5: Ce transparent thin film [J]. J. Chin. Ceramic. Soc. (硅酸盐学报), 2010, 38 (10):1882-1885 (in Chinese).[10] Pechini M P. Method of preparing lead and alkaline earth titanates and niobates and coating method using the same to form a capacitor: US,3330697 . 1967-07-11.[11] Xie Jianjun, Lin Ting, Shi Ying, et al. Luminescence properties of nano-sized Lu2SiO5: Ce phosphors prepared by sol-gel method [J]. J. Chin. Ceramic. Soc. (硅酸盐学报), 2010, 38 (10):1932-1936 (in Chinese).[12] Ren Guohao, Qin Laishun, Lu Sheng, et al. Scintillation characteristics of lutetium oxyorthosilicate (Lu2SiO5: Ce) crystals doped with cerium ions [J]. Nucl. Instrum. Methods A, 2004, 531 (3):560-565.[13] Shi Chaoshu, Liu Bo, Zhang Guobin, et al. Temperature dependence of luminescence from scintillator LSO:Ce under VUV excitation [J]. J. Electron. Spectrosc. Relat. Phenom., 2005, 144-147:905-908.[14] Liao Naiman, Li wei, Jiang Yadong, et al. Thickness and optical constant determination of hydrogenated amorphous silicon thin film from transmittance spectra of ellipsometer [J]. Acta Physica Sinica (物理学报), 2008, 57 (3):1542-1546 (in Chinese).

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