ZnO/Ag/ZnO多层结构薄膜的光电性质

郭亮; 赵东旭; 张振中; 李炳辉; 张吉英; 申德振

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ZnO/Ag/ZnO多层结构薄膜的光电性质

器件制备及器件物理 | 更新时间：2020-08-12

- ZnO/Ag/ZnO多层结构薄膜的光电性质
- Optoelectronic Properties of ZnO/Ag/ZnO Multiple Films
- 发光学报 2011年32卷第9期页码：920-923
- 作者机构：
  
  1. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
  
  中国科学院知识创新工程重要方向项目(KJCX3. SYW. WOI)资助项目()
- DOI：
  中图分类号： O472.8;O482.31
- 收稿：2011-03-03，
  
  修回：2011-3-21，
  
  网络出版：2011-09-22，
  
  纸质出版：2011-09-22
- 稿件说明：
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郭亮, 赵东旭, 张振中, 李炳辉, 张吉英, 申德振. ZnO/Ag/ZnO多层结构薄膜的光电性质[J]. 发光学报, 2011,32(9): 920-923

GUO Liang, ZHAO Dong-xu, ZHANG Zhen-zhong, LI Bing-hui, ZHANG Ji-ying, SHEN De-zhen. Optoelectronic Properties of ZnO/Ag/ZnO Multiple Films[J]. Chinese Journal of Luminescence, 2011,32(9): 920-923
郭亮, 赵东旭, 张振中, 李炳辉, 张吉英, 申德振. ZnO/Ag/ZnO多层结构薄膜的光电性质[J]. 发光学报, 2011,32(9): 920-923 DOI：

GUO Liang, ZHAO Dong-xu, ZHANG Zhen-zhong, LI Bing-hui, ZHANG Ji-ying, SHEN De-zhen. Optoelectronic Properties of ZnO/Ag/ZnO Multiple Films[J]. Chinese Journal of Luminescence, 2011,32(9): 920-923 DOI：

摘要

通过磁控溅射方法生长了不同银层厚度的ZnO/Ag/ZnO 多层结构的薄膜

并对其形貌、光吸收谱、光致发光和光响应特性进行了比较研究。结果表明ZnO薄膜中银薄层的加入使得光致发光的强度增强。银层厚度为6 nm样品制成的器件在350 nm处的光响应度为0.06 A/W

相对于ZnO薄膜提高了一个数量级。而当银层厚度达到15 nm时

光响应度反而下降。

Abstract

The ZnO/Ag/ZnO multiple films with different thickness of Ag film were grown via magnetron sputtering method. The morphology

optical absorption spectra

photoluminescence and photoresponse properties were studied. The results exhibited that the intensity of photoluminescence was increased with the adding of the Ag film into ZnO film. The photo responsivity was 0.06 A/W at 350 nm when the thickness of the Ag film was 6 nm. Compared with ZnO film this value was improved one magnitude. However

the photo responsivity was decreased when the thickness of the Ag film was reached 15 nm.

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references

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