PrF3阳极缓冲层对OLED器件性能的影响

廖亚琴; 陈红; 刘星元

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PrF₃阳极缓冲层对OLED器件性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- PrF₃阳极缓冲层对OLED器件性能的影响
- Effect of PrF₃ Anode Buffer Layer on The Performance of OLED
- 发光学报 2011年32卷第9期页码：929-933
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  吉林省科技发展计划项目(20090346,20100570)资助()
- DOI：
  中图分类号： TN383.1
- 收稿日期：2011-03-29，
  
  修回日期：2011-05-24，
  
  网络出版日期：2011-09-22，
  
  纸质出版日期：2011-09-22
- 稿件说明：
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廖亚琴, 陈红, 刘星元. PrF3阳极缓冲层对OLED器件性能的影响[J]. 发光学报, 2011,32(9): 929-933

LIAO Ya-qin, CHEN-hong, LIU Xing-yuan. Effect of PrF3 Anode Buffer Layer on The Performance of OLED[J]. Chinese Journal of Luminescence, 2011,32(9): 929-933
廖亚琴, 陈红, 刘星元. PrF3阳极缓冲层对OLED器件性能的影响[J]. 发光学报, 2011,32(9): 929-933 DOI：

LIAO Ya-qin, CHEN-hong, LIU Xing-yuan. Effect of PrF3 Anode Buffer Layer on The Performance of OLED[J]. Chinese Journal of Luminescence, 2011,32(9): 929-933 DOI：

摘要

使用真空热蒸镀法制备的OLED器件

利用不同厚度的PrF

作阳极缓冲层

并和未加缓冲层的器件进行了对比。实验结果表明: 0.5 nm厚的PrF

阳极缓冲层可以有效增强OLED器件的空穴注入能力

增强电子和空穴的浓度平衡

优化器件的电致发光特性。器件的最大电流效率为4.9 cd/A

最大亮度为33 600 cd/m

分别是未加入缓冲层的常规器件(3.7 cd/A

最大亮度为12 230 cd/m

)的1.3倍和2.75倍。

Abstract

A high efficiency organic light emitting device (OLED) was fabricated by a facile way based on an ultra thin praseodymium fluoride (PrF

) as the anode buffer layer. The PrF

anode buffer layer device shows some dramatic properties such as higher hole injection

stable and high current efficiency

and much higher luminance compared with those of the traditional ITO anode device. The 0.5 nm PrF

anode buffer layer device gives the maximum current efficiency and luminance of 4.9 cd/A and 33 600 cd/m

respectively

comparing with the traditional ITO anode device of 3.7 cd/A and 12 320 cd/m

. The reason of the optimized device was also discussed.

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Keywords

references

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