快速热退火对Co/Si0.85Ge0.15肖特基结电学特性的影响

王光伟; 姚素英; 肖夏; 徐文慧

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快速热退火对Co/Si_0.85Ge_0.15肖特基结电学特性的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 快速热退火对Co/Si_0.85Ge_0.15肖特基结电学特性的影响
- Effects of Rapid Thermal Annealing on The Physical and Electrical Properties of Co/Sputtered-Si_1-xGe_x Schottky Junction
- 发光学报 2011年32卷第9期页码：924-928
- 作者机构：
  
  1. 天津大学电信学院天津,300072
  2. 天津职业技术师范大学电子工程学院, 天津 300222
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.4
- 收稿日期：2011-02-17，
  
  修回日期：2011-03-24，
  
  网络出版日期：2011-09-22，
  
  纸质出版日期：2011-09-22
- 稿件说明：
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王光伟, 姚素英, 肖夏, 徐文慧. 快速热退火对Co/Si0.85Ge0.15肖特基结电学特性的影响[J]. 发光学报, 2011,32(9): 924-928

WANG Guang-wei, YAO Su-ying, XIAO Xia, XU Wen-hui. Effects of Rapid Thermal Annealing on The Physical and Electrical Properties of Co/Sputtered-Si1-xGex Schottky Junction[J]. Chinese Journal of Luminescence, 2011,32(9): 924-928
王光伟, 姚素英, 肖夏, 徐文慧. 快速热退火对Co/Si0.85Ge0.15肖特基结电学特性的影响[J]. 发光学报, 2011,32(9): 924-928 DOI：

WANG Guang-wei, YAO Su-ying, XIAO Xia, XU Wen-hui. Effects of Rapid Thermal Annealing on The Physical and Electrical Properties of Co/Sputtered-Si1-xGex Schottky Junction[J]. Chinese Journal of Luminescence, 2011,32(9): 924-928 DOI：

摘要

用离子束溅射技术分别在SiO

和单晶Si衬底上沉积了Si

和Co薄膜。在不同温度下

对Co/Si

肖特基结进行快速热退火处理(RTA)

对处理后的样品进行了表面形貌和电学测量。发现退火温度升高

样品表面粗糙度变大

理想因子也变大

但对肖特基势垒高度(SBH)的影响很小。分析认为

随着退火温度的升高

金属/半导体界面缺陷态密度的增加是造成理想因子变大的主要原因。界面态对费米能级的"钉扎"以及固相反应生成锗硅化钴与Co的功函数大致相同

是SBH基本不随温度变化的主要因素。

Abstract

films were deposited by ion beam sputtering on SiO

and monocrystalline Si substrates respectively. The Si

films were doped with phosphorus and boron respectively through thermal diffusion to form n- and p-type films. The Si

film is polycrystalline. And the Co/poly-Si

Schottky junctions were performed. The surface roughness and electrical properties were measured right after they were dealt with rapid thermal annealing (RTA) at different temperatures. With the increasing of annealing temperature

the surface roughness and the ideal factor characterizing the Schottky contact deviation from ideal status increase

while the Schottky barrier height (SBH) just changes slightly. The interfacial defect density increases with the annealing temperature increase

which is the main reason for the ideal factor going up. The Fermi level pinning effect originating from the interfacial state and Cobalt Germanium silicides formed by solid state reaction having almost the same work function with Cobalt itself are the two principal aspects responsible for nearly invariant SBH.

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references

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