LIN Jie, FAN Yi, LIU Xing-yuan. High Efficient Phosphorescent Organic Electroluminescence Based on Al Doped ZnO Anode[J]. Chinese Journal of Luminescence, 2011,32(3): 290-292
LIN Jie, FAN Yi, LIU Xing-yuan. High Efficient Phosphorescent Organic Electroluminescence Based on Al Doped ZnO Anode[J]. Chinese Journal of Luminescence, 2011,32(3): 290-292DOI:
基于AZO的高效率磷光有机电致发光
摘要
采用离子辅助的电子束双源共蒸技术制备了AZO薄膜
其载流子浓度和迁移率分别为4.3910
20
cm
-3
和15 cm
2
V
-1
s
-1
在可见光范围内的平均透过率达到85.5%
功函数为5.05 eV。采用AZO作为阳极制备的磷光OLED得到最大亮度为192 400 cd/m
2
最大电流效率为83.5 cd/A。结果表明
AZO作为OLED的阳极可获得优异的电致发光性能。
Abstract
Al doped ZnO (AZO) thin film is prepared by the double electron beam co-evaporation with an ion-assisted deposition technique. The AZO film shows a carrier density of 4.3910
20
cm
-3
and an electron mobility of 15 cm
2
V
-1
s
-1
respectively. The AZO thin film has a work function of 5.05 eV
and shows an average visible spectral transmittance of 85.5%. OLED based on AZO anode exhibits a maximum luminance of 192 400 cd/m
2
and a maximum current efficiency of 83.5 cd/A
which indicates that AZO films can be a promising anode material for organic EL devices.
关键词
Keywords
references
Lewis B G, Paine D C. Applications and processing of transparent conducting oxides [J]. MRS Bulletin, 2000, 25 (8):22-27.[2] Dawar A L, Joshi J C. Semiconducting transparent thin films:their properties and applications [J]. Mater. Sci., 1984, 19 (1):1-23.[3] Jia Yong, Deng Zhenbo, Xiao Jing, et al. The effect of PBD as electron transporting layer in Alq3 ∶ DCJTB organic light emitting devices [J]. Chin. J. Lumin.(发光学报), 2008, 29 (1):23-26 (in Chinese).[4] Chen Wei, Rao Haibo, Jiang Quan, et al. Effect of p-type accepter-like trap on the charge carrier trasportation of OLEDs [J]. Chin. J. Lumin.(发光学报), 2009, 30 (1):51-54 (in Chinese).[5] Xiong Zhiyong, Li Hongjian, Wang Junxi, et al. Optical characteristics of flexible microcavity organic light-emitting diodes [J]. Chin. J. Lumin.(发光学报), 2009, 30 (3):337-343 (in Chinese).[6] Yang Shaopeng, Wang Lishun, Qiu Xiaoli, et al. Organic red electroluminescence devices based on PVK with high color purity and high stability [J]. Chin. J. Lumin.(发光学报), 2009, 30 (6):728-733 (in Chinese).[7] Wang Y, Yan Y, Shen M, et al. Advances in transparent conducting thin films [J]. Materials Review (材料导报), 2006, 20 (z1):317-319 (in Chinese).[8] Kim S, Seo H, Kim Y, et al. Surface characteristics of indium-tin oxide cleaned by remote plasma [J]. Jpn. J. Appl. Phys., 2005, 44 (2):1041-1044.[9] Minami T. Transparent conducting oxide semiconductors for transparent electrodes [J]. Semicond. Sci. Technol., 2005, 20 (4):S35-S44.[10] Zhang Y, Yin H, Huang J, et al. Recent progress in transparent and conducting films [J]. OME Information (光机电信息), 2006, 23 (2):56-60 (in Chinese).