极化效应对InGaN/GaN多量子阱结构光电特性的影响

路慧敏; 陈根祥

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极化效应对InGaN/GaN多量子阱结构光电特性的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 极化效应对InGaN/GaN多量子阱结构光电特性的影响
- Influence of Polarization Effect on Optoelectronic Properties of InGaN/GaN Multiple Quantum Well
- 发光学报 2011年32卷第3期页码：266-271
- 作者机构：
  
  北京交通大学光波技术研究所北京,100044
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60777013)();北京市自然科学基金(4082023)();北京交通大学优秀博士生科技创新基金(141063522)资助项目()
- DOI：
  中图分类号： O472.3;O473.4
- 收稿日期：2010-10-01，
  
  修回日期：2010-10-27，
  
  网络出版日期：2011-03-22，
  
  纸质出版日期：2011-03-22
- 稿件说明：
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路慧敏, 陈根祥. 极化效应对InGaN/GaN多量子阱结构光电特性的影响[J]. 发光学报, 2011,32(3): 266-271

LU Hui-min, CHEN Gen-xiang. Influence of Polarization Effect on Optoelectronic Properties of InGaN/GaN Multiple Quantum Well[J]. Chinese Journal of Luminescence, 2011,32(3): 266-271
路慧敏, 陈根祥. 极化效应对InGaN/GaN多量子阱结构光电特性的影响[J]. 发光学报, 2011,32(3): 266-271 DOI：

LU Hui-min, CHEN Gen-xiang. Influence of Polarization Effect on Optoelectronic Properties of InGaN/GaN Multiple Quantum Well[J]. Chinese Journal of Luminescence, 2011,32(3): 266-271 DOI：

摘要

通过求解修正的基于 kp 方法的有效质量哈密顿方程并与泊松方程进行自洽

得到在极化效应影响下InGaN/GaN多量子阱的能带结构和自发辐射谱。计算结果表明

极化效应使InGaN/GaN多量子阱结构的带边由方形势变成三角形势

使导带和价带间的带隙宽度减小导致发光峰值波长红移

并使电子和空穴的分布产生空间分离从而减小发光效率。同时

随着InGaN/GaN多量子阱结构阱层In组分的增多或阱层宽度的增加

极化效应带来的发光峰值波长红移效果进一步增强。

Abstract

The band structure and spontaneous emission spectra of the InGaN/GaN multiple quantum well (MQW) structures considering the polarization effect were systematically analyzed employing a newly deve-loped theoretical model based on the kp theory. Numerical results show that the square potential profile of conduction band and valence band change to triangle due to the polarization effect. And polarization-induced electrostatic field makes the bandgap of InGaN/GaN MQW structure narrow

which results in the red shift of peak emission wavelength. In addition

the emission efficiency of InGaN/GaN MQW structure reduces because the polarization effect separates the distribution of electrons and holes. Furthermore

the red shift of the peak emission wavelength induced by the polarization effect is enhanced under the condition of more In content in well layers or deeper well width for the InGaN/GaN MQW structures.

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references

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