高取向As掺杂ZnO纳米线阵列的制备与表征

冯秋菊; 冯宇; 梁红伟; 王珏; 陶鹏程; 蒋俊岩; 赵涧泽; 李梦轲; 宋哲; 孙景昌

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高取向As掺杂ZnO纳米线阵列的制备与表征

材料合成及性能研究 | 更新时间：2020-08-12

- 高取向As掺杂ZnO纳米线阵列的制备与表征
- Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires
- 发光学报 2011年32卷第2期页码：154-158
- 作者机构：
  
  1. 大连理工大学物理与光电工程学院,辽宁大连,116024
  2. 辽宁师范大学物理与电子技术学院,辽宁大连,116029
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10804040)();中国博士后科学基金(20070411069)();辽宁省博士科研启动基金(20081081)();辽宁省教育厅创新团队基金(2
- DOI：
  中图分类号： O472;O482.31
- 收稿日期：2010-05-27，
  
  修回日期：2010-08-27，
  
  网络出版日期：2011-02-22，
  
  纸质出版日期：2011-02-22
- 稿件说明：
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冯秋菊, 冯宇, 梁红伟, 王珏, 陶鹏程, 蒋俊岩, 赵涧泽, 李梦轲, 宋哲, 孙景昌. 高取向As掺杂ZnO纳米线阵列的制备与表征[J]. 发光学报, 2011,32(2): 154-158

FENG Qiu-ju, FENG Yu, LIANG Hong-wei, WANG Jue, TAO Peng-cheng, JIANG Jun-yan, ZHAO Jian-ze, LI Meng-ke, SONG Zhe, SUN Jing-chang. Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires[J]. Chinese Journal of Luminescence, 2011,32(2): 154-158
冯秋菊, 冯宇, 梁红伟, 王珏, 陶鹏程, 蒋俊岩, 赵涧泽, 李梦轲, 宋哲, 孙景昌. 高取向As掺杂ZnO纳米线阵列的制备与表征[J]. 发光学报, 2011,32(2): 154-158 DOI：

FENG Qiu-ju, FENG Yu, LIANG Hong-wei, WANG Jue, TAO Peng-cheng, JIANG Jun-yan, ZHAO Jian-ze, LI Meng-ke, SONG Zhe, SUN Jing-chang. Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires[J]. Chinese Journal of Luminescence, 2011,32(2): 154-158 DOI：

摘要

在不采用任何金属催化剂的条件下

运用化学气相沉积法

在 Si(100)衬底上制备出高取向的As掺杂ZnO纳米线阵列。样品的X射线衍射(XRD)谱显示获得了单一取向的衍射峰

表明样品具有较好的结晶质量。场发射扫描电镜(FE-SEM)观察表明

As掺杂ZnO纳米线阵列具有均一的直径和长度

其顶部和根部直径分别为70 nm和100 nm

长度约为1.5 m。此外

在能量色散谱(EDS)中观测到了As元素的存在。在低温(11 K)光致发光谱中还观测到了与As掺杂相关的中性受主束缚激子发光(A

证实As元素作为受主掺杂进入ZnO晶格。As掺杂ZnO纳米线的成功制备为ZnO基纳米光电器件的实现提供了一种可行的p型掺杂方法。

Abstract

The ZnO nanowires were grown on Si(100) substrates by chemical vapor deposition method without using catalyst. The X-ray diffraction (XRD) indicates the highly preferred crystal orientation along the

axis of ZnO in this sample. Field emission scanning electron microscope(FE-SEM) showed well-aligned ZnO nanowires with uniform diameter

length

and density were grown perpendicularly on Si substrate. The top and root diameter of the ZnO nanowires are about 70 nm and 100 nm

respectively

and the length of the nanowires is about 1.5 m. Furthermore

the As elements were detected in the arsenic doped ZnO nanowires by the energy-dispersive X-ray spectroscopy (EDS). The arsenic related acceptor emission was observed in the photoluminescence spectra at 11 K for all arsenic doped ZnO samples. This preparation method of arsenic doped ZnO nanowires may provide a new way for realizing the ZnO nanowires based light emitting diode and laser diode.

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references

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