高取向As掺杂ZnO纳米线阵列的制备与表征

冯秋菊; 冯宇; 梁红伟; 王珏; 陶鹏程; 蒋俊岩; 赵涧泽; 李梦轲; 宋哲; 孙景昌

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高取向As掺杂ZnO纳米线阵列的制备与表征

材料合成及性能研究 | 更新时间：2020-08-12

- 高取向As掺杂ZnO纳米线阵列的制备与表征
- Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires
- 发光学报 2011年32卷第2期页码：154-158
- 作者机构：
  
  1. 大连理工大学物理与光电工程学院,辽宁大连,116024
  2. 辽宁师范大学物理与电子技术学院,辽宁大连,116029
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10804040)();中国博士后科学基金(20070411069)();辽宁省博士科研启动基金(20081081)();辽宁省教育厅创新团队基金(2
- DOI：
  中图分类号： O472;O482.31
- 收稿日期：2010-05-27，
  
  修回日期：2010-08-27，
  
  网络出版日期：2011-02-22，
  
  纸质出版日期：2011-02-22
- 稿件说明：
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冯秋菊, 冯宇, 梁红伟, 王珏, 陶鹏程, 蒋俊岩, 赵涧泽, 李梦轲, 宋哲, 孙景昌. 高取向As掺杂ZnO纳米线阵列的制备与表征[J]. 发光学报, 2011,32(2): 154-158

FENG Qiu-ju, FENG Yu, LIANG Hong-wei, WANG Jue, TAO Peng-cheng, JIANG Jun-yan, ZHAO Jian-ze, LI Meng-ke, SONG Zhe, SUN Jing-chang. Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires[J]. Chinese Journal of Luminescence, 2011,32(2): 154-158
冯秋菊, 冯宇, 梁红伟, 王珏, 陶鹏程, 蒋俊岩, 赵涧泽, 李梦轲, 宋哲, 孙景昌. 高取向As掺杂ZnO纳米线阵列的制备与表征[J]. 发光学报, 2011,32(2): 154-158 DOI：

FENG Qiu-ju, FENG Yu, LIANG Hong-wei, WANG Jue, TAO Peng-cheng, JIANG Jun-yan, ZHAO Jian-ze, LI Meng-ke, SONG Zhe, SUN Jing-chang. Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires[J]. Chinese Journal of Luminescence, 2011,32(2): 154-158 DOI：

摘要

在不采用任何金属催化剂的条件下

运用化学气相沉积法

在 Si(100)衬底上制备出高取向的As掺杂ZnO纳米线阵列。样品的X射线衍射(XRD)谱显示获得了单一取向的衍射峰

表明样品具有较好的结晶质量。场发射扫描电镜(FE-SEM)观察表明

As掺杂ZnO纳米线阵列具有均一的直径和长度

其顶部和根部直径分别为70 nm和100 nm

长度约为1.5 m。此外

在能量色散谱(EDS)中观测到了As元素的存在。在低温(11 K)光致发光谱中还观测到了与As掺杂相关的中性受主束缚激子发光(A

证实As元素作为受主掺杂进入ZnO晶格。As掺杂ZnO纳米线的成功制备为ZnO基纳米光电器件的实现提供了一种可行的p型掺杂方法。

Abstract

The ZnO nanowires were grown on Si(100) substrates by chemical vapor deposition method without using catalyst. The X-ray diffraction (XRD) indicates the highly preferred crystal orientation along the

axis of ZnO in this sample. Field emission scanning electron microscope(FE-SEM) showed well-aligned ZnO nanowires with uniform diameter

length

and density were grown perpendicularly on Si substrate. The top and root diameter of the ZnO nanowires are about 70 nm and 100 nm

respectively

and the length of the nanowires is about 1.5 m. Furthermore

the As elements were detected in the arsenic doped ZnO nanowires by the energy-dispersive X-ray spectroscopy (EDS). The arsenic related acceptor emission was observed in the photoluminescence spectra at 11 K for all arsenic doped ZnO samples. This preparation method of arsenic doped ZnO nanowires may provide a new way for realizing the ZnO nanowires based light emitting diode and laser diode.

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references

Gao Shuxia, Wang Deyi. Influence of annealing temperature on structure and optical properties of Na-doped ZnO thin films prepared by sol-gel method [J]. Chin. J. Lumin. (发光学报), 2010, 30 (1):81-85 (in Chinese).[2] Ning Dan, Liu Chengyou. Structural and optical peroperties of MgxZn1-xO films [J]. Chin. J. Lumin. (发光学报), 2010, 30 (1):559-561 (in Chinese).[3] Li Qingwei, Bian Jiming, Wang Jingwei, et al. Optical properties of Co-doped ZnO nanorods synthesized by a hydrothermal method [J]. Chin. J. Lumin. (发光学报), 2010, 31 (2):253-257 (in Chinese).[4] Tang Z K, Wong G K L, Yu P, et al. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films [J]. Appl. Phys. Lett., 1998, 72 (25):3270-3272.[5] Jiao S J, Zhang Z Z, Lu Y M, et al. ZnO p-n junction light-emitting diodes fabricated on sapphire substrates [J]. Appl. Phys. Lett., 2006, 88 (3):031911-1-3.[6] Liu W, Gu S L, Ye J D, et al. Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique [J]. Appl. Phys. Lett., 2006, 88 (9):092101-1-3.[7] Liang H W, Lu Y M, Shen D Z, et al. p-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO [J]. Phys. Stat. Soli. (a), 2005, 202 (6):1060-1064.[8] Geng C, Jiang Y, Yao Y, et al. Well-aligned ZnO nanowire arrays fabricated on silicon substrates [J]. Adv. Funct. Mater., 2004, 14 (6):589-594.[9] Yang P, Yan H, Mao S, et al. Controlled growth of ZnO nanowires and their optical properties [J]. Adv. Funct. Mater., 2002, 12 (5):323-331.[10] Xiang Bin, Wang Pengwei, Zhang Xingzheng, et al. Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition [J]. Nano Lett., 2007, 7 (2):323-328.[11] Zang C H, Zhao D X, Tang Y, et al. Acceptor related photoluminescence from ZnO ∶ Sb nanowires fabricated by chemical vapor deposition method [J]. Chem. Phys. Lett., 2008, 452 (1-3):148-150.[12] Yang Y, Qi J J, Zhang Y, et al. Controllable fabrication and electromechanical characterization of single crystalline Sb-doped ZnO nanobelts [J]. Appl. Phys. Lett., 2008, 92 (18):183117-1-3.[13] Zou K, Qi X Y, Duan X F, et al. Sb-induced bicrystal ZnO nanobelts [J]. Appl. Phys. Lett., 2005, 86 (1):013103-1-3.[14] Park K, Seong J K, Nahm S. Improvement of thermoelectric properties with the addition of Sb to ZnO [J]. J. Alloys and Compounds, 2008, 455 (1-2):331-335.[15] Shan C X, Liu Z, Hark S K. Temperature dependent photoluminescence study on phosphorus doped ZnO nanowires [J]. Appl. Phys. Lett., 2008, 92 (7):073103-1-3.[16] Hsu C L, Chang S J, Lin Y R, et al. Vertically well aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates [J]. Chem. Commun., 2005(28):3571-3573.[17] Lee C Y, Tseng T Y, Li S Y, et al. Effect of phosphorus dopant on photoluminescence and field-emission characteristics of MgZnO nanowires [J]. J. Appl. Phys., 2006, 99 (2):024303-1-3.[18] Zhang Junyan, Deng Tiansong, Shen Xi, et al. Electrical and optical properties of single As-doped ZnO nanowire field effect transistors [J]. Acta Physica Sinica (物理学报), 2009, 58 (6):4156-4161 (in Chinese).[19] Zhang J Y, Li P J, Sun H, et al. Ultraviolet electroluminescence from controlled arsenic-doped ZnO nanowire homojunctions [J]. Appl. Phys. Lett., 2008, 93 (2):021116-1-3.[20] Sun M H, Zhang Q F, Wu J L. Electrical and electroluminescence properties of As-doped p-type ZnO nanorod arrays [J]. J. Phys. D: Appl. Phys., 2007, 40 (12):3798-3802.[21] Huang M H, Wu Y Y, Feick H. Catalytic growth of zinc oxide nanowires by vapor transport [J]. Adv. Mater., 2001, 13 (2):113-116.[22] Yang Y H, Wang B, Wang C X, et al. Radial ZnO nanowire nucleation on amorphous carbons [J]. Appl. Phys. Lett., 2005, 87 (18):183109-1-3.[23] Zhang B P, Binh N T, Segawa Y, et al. Optical properties of ZnO rods formed by metalorganic chemical vapor deposition [J]. Appl. Phys. Lett., 2003, 83 (8):1635-1637.[24] Sun J C, Liang H W, Zhao J Z, et al. Annealing effects on electrical and optical properties of ZnO films deposited on GaAs by metal organic chemical vapor deposition [J]. Appl. Surf. Sci., 2008, 254 (22):7482-7485.[25] Ryu Y R, Lee T S, White H W. Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition [J]. Appl. Phys. Lett., 2003, 83 (1):87-89.

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