银修饰的ZnO纳米线的发光和光响应性质

郭亮; 赵东旭; 张振中; 李炳辉; 张吉英; 申德振

doi:null

您当前的位置：

首页 >

文章列表页 >

银修饰的ZnO纳米线的发光和光响应性质

材料合成及性能研究 | 更新时间：2020-08-12

- 银修饰的ZnO纳米线的发光和光响应性质
- Photoluminescence and Photoresponse Property of Ag Modified ZnO Nanowire
- 发光学报 2011年32卷第3期页码：216-219
- 作者机构：
  
  1. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
  
  中国科学院知识创新工程重要方向项目(KJCX3.SYW.WOI )资助()
- DOI：
  中图分类号： O472.3;O482.31
- 收稿日期：2010-09-16，
  
  修回日期：2010-10-25，
  
  纸质出版日期：2011
- 稿件说明：
移动端阅览
郭亮, 赵东旭, 张振中, 李炳辉, 张吉英, 申德振. 银修饰的ZnO纳米线的发光和光响应性质[J]. 发光学报, 2011,32(3): 216-219

GUO Liang, ZHAO Dong-xu, ZHANG Zhen-zhong, LI Bing-hui, ZHANG Ji-ying, SHEN De-zhen. Photoluminescence and Photoresponse Property of Ag Modified ZnO Nanowire[J]. Chinese Journal of Luminescence, 2011,32(3): 216-219
郭亮, 赵东旭, 张振中, 李炳辉, 张吉英, 申德振. 银修饰的ZnO纳米线的发光和光响应性质[J]. 发光学报, 2011,32(3): 216-219 DOI：

GUO Liang, ZHAO Dong-xu, ZHANG Zhen-zhong, LI Bing-hui, ZHANG Ji-ying, SHEN De-zhen. Photoluminescence and Photoresponse Property of Ag Modified ZnO Nanowire[J]. Chinese Journal of Luminescence, 2011,32(3): 216-219 DOI：

摘要

采用不同浓度的银溶液对水热方法生长的ZnO纳米线进行了银修饰

并对其形貌、光致发光和光响应特性进行了研究。实验结果表明

随着修饰用银浓度的加大

光致发光的强度减弱。对原生的和用浓度为10 mmol/L的银修饰的ZnO纳米线的光响应进行了测试和比较

发现银修饰的ZnO纳米线在380 nm的响应度达4.6 mA/W

其值是未修饰的ZnO纳米线的75倍

说明银修饰有效地提高了ZnO纳米线的光响应特性。

Abstract

The ZnO nanowires grown via hydrothermal method were modified by Ag with different concentration in solution. The morphology

photoluminescence property

photoresponse of the ZnO nanowire were stu-died. The results exhibited that the intensity of photoluminescence decreases with the increased Ag concentration. The photoresponses of as-grown and modified by Ag of 10 mmol/L nanowires were tested and compared. The responsivity of Ag modified ZnO nanowire was 4.6 mA/W at 380 nm. This value was 75 times larger than that of the as-grown one. The results indicated that photoresponse property of ZnO nanowires can be effectively improved by Ag modifying.

关键词

Keywords

references

Jiao Bojie, Zhang Zhenzhong, Lv Youming, et al. p-n ZnO light-emitting diode fabricated on a-sapphire substrate [J]. Chin. J. Lumin. (发光学报), 2005, 26 (4):542-544 (in Chinese).[2] Gao Shuxia, Wang Deyi. Influence of annealing temperature on structure and optical properties of Na-doped ZnO thin films prepared by sol-gel method [J]. Chin. J. Lumin. (发光学报), 2009, 30 (1):81-85 (in Chinese).[3] Ning Dan, Liu Chengyou. Structural and optical properties of MgxZn1-xO films [J]. Chin. J. Lumin. (发光学报), 2009, 30 (4):559-561 (in Chinese).[4] Zhao Yanmin, Zhang Jiying, Shan Congxin, et al. A back-illuminated Au/ZnO/Al Shottky UV photodetector [J]. Chin. J. Lumin. (发光学报), 2010, 31 (4):527-530 (in Chinese).[5] Wang Z L. Nanobelts, nanowires, and nanodiskettes of semiconducting oxides from materials to nanodevices [J]. Adv. Mater., 2003, 15 (5):432-436.[6] Konenkamp R, Word R C, Schlegel C. Vertical nanowire light-emitting diode [J]. Appl. Phys. Lett., 2004, 85 (24):6004-6006.[7] Ahn S E, Lee J S, Kim H, et al. Photoresponse of sol-gel-synthesized ZnO nanorods [J]. Appl. Phys. Lett., 2004, 84 (24):5022-5024.[8] Li Q H, Liang Y X, Wan Q, et al. Oxygen sensing characteristics of individual ZnO nanowire transistors [J]. Appl. Phys. Lett., 2004, 85 (26):6389-6391.[9] Chen T, Xing G Z, Zhang Z, et al. Tailoring the photoluminescence of ZnO nanowires using Au nanoparticles [J]. Nanotechnology, 2008, 19 (43):435711-1-5.[10] Liu Bao, Wu Youshi, Wu Lili, et al. Hydrothermal preparation and optical properties of Sn-doped ZnO nanocrystals [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):532-536 (in Chinese).[11] Tien L C, Sadik P W, Norton D P, et al. Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods [J]. Appl. Phys. Lett., 2005, 87 (22):222106-1-3.[12] Lin D D, Wu H, Zhang W, et al. Enhanced UV photoresponse from heterostructured Ag-ZnO nanowires [J]. Appl. Phys. Lett., 2009, 94 (11):112104-1-3.

浏览量

152

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

ZnO/Ag/ZnO多层结构薄膜的光电性质

退火处理对ZnO纳米线紫外探测器性能的改善