氧化锌/ 金刚石薄膜异质结紫外光探测器

黄健; 王林军; 唐可; 张继军; 夏义本; 鲁雄刚

doi:null

您当前的位置：

首页 >

文章列表页 >

氧化锌/ 金刚石薄膜异质结紫外光探测器

器件制备及器件物理 | 更新时间：2020-08-12

- 氧化锌/ 金刚石薄膜异质结紫外光探测器
- Ultraviolet Detector Based on ZnO/Diamond Film Heterojunction Diode
- 发光学报 2011年32卷第3期页码：272-276
- 作者机构：
  
  上海大学材料科学与工程学院, 上海 200072
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60877017)();长江学者和创新团队发展计划(IRT0739)();上海市重点学科资助课题(S30107)();上海市教育委员会优秀青年教师基金
- DOI：
  中图分类号： O472.3;TN315
- 收稿日期：2010-10-01，
  
  修回日期：2010-11-22，
  
  网络出版日期：2011-03-22，
  
  纸质出版日期：2011-03-22
- 稿件说明：
移动端阅览
黄健, 王林军, 唐可, 张继军, 夏义本, 鲁雄刚. 氧化锌/ 金刚石薄膜异质结紫外光探测器[J]. 发光学报, 2011,32(3): 272-276

HUANG Jian, WANG Lin-jun, TANG Ke, ZHANG Ji-jun, XIA Yi-ben, LU Xiong-gang. Ultraviolet Detector Based on ZnO/Diamond Film Heterojunction Diode[J]. Chinese Journal of Luminescence, 2011,32(3): 272-276
黄健, 王林军, 唐可, 张继军, 夏义本, 鲁雄刚. 氧化锌/ 金刚石薄膜异质结紫外光探测器[J]. 发光学报, 2011,32(3): 272-276 DOI：

HUANG Jian, WANG Lin-jun, TANG Ke, ZHANG Ji-jun, XIA Yi-ben, LU Xiong-gang. Ultraviolet Detector Based on ZnO/Diamond Film Heterojunction Diode[J]. Chinese Journal of Luminescence, 2011,32(3): 272-276 DOI：

摘要

采用射频磁控溅射法在p型自支撑金刚石衬底上制备了高度

轴取向的n型氧化锌薄膜。研究了不同的溅射功率对氧化锌薄膜质量的影响。通过半导体特性分析系统测试了氧化锌/金刚石异质结的电流-电压特性

结果显示该异质结二极管具有良好的整流特性

开启电压约为1.6 V。在此基础上制备了结型紫外光探测器

并对其光电性能进行了研究。结果表明

在施加反向偏压的条件下

该探测器对紫外光具有明显的光响应。

Abstract

Highly

-axis oriented n-type ZnO films were grown on the p-type fresstanding diamond(FSD) substrates by radio-frequency (RF) magnetron sputtering method. The effects of the sputtering power on the pro-perties of ZnO films were studied. Current-voltage (

I-V

) characteristics of the ZnO/diamond heterojunction were examined by a semiconductor characterization system and the results showed a distinct rectifying characteristics with a turn-on voltage of about 1.6 V. The ZnO/diamond heterojunction diode was also used for ultraviolet(UV) detector application and the detector showed a significant discrimination between the UV light and the visible light under reverse bias conditions.

关键词

Keywords

references

Chiou Y Z, Su Y K, Chang S J, et al. High detectivity InGaN-GaN multiquantum well p-n junction photodiodes[J]. IEEE J. Quan. Electron., 2003, 39 (5):681-685.[2] Moon T H, Jeong M C, Lee W, et al. The fabrication and characterization of ZnO UV detector [J]. Appl. Surf. Sci., 2005, 240 (1-4):280-285.[3] Johnson C E, Weimer W A, Harris D C. Characterization of diamond films by thermogravimetric analysis and infrared spectroscopy [J]. Materials Research Bulletin, 1989, 24 (9):1127-1134.[4] Gao Shuxia, Wang Deyi. Influence of annealing temperature on structure and optical properties of Na-doped ZnO thin films prepared by sol-gel method [J]. Chin. J. Lumin. (发光学报), 2009, 30 (1):81-85 (in Chinese).[5] Ning Dan, Liu Chengyou. Structural and optical properties of MgxZn1-xO films [J]. Chin. J. Lumin. (发光学报), 2009, 30 (4):559-561 (in Chinese).[6] Kang Chaoyang, Zhao Chaoyang, Liu Zhengrong, et al. Improvement of the structure and photoelectrical properties of ZnO films based on SiC buffer layer grown on Si(111) [J]. Chin. J. Lumin. (发光学报), 2009, 30 (6):807-811 (in Chinese).[7] Razeghi M, Rogalski A. Semiconductor ultraviolet detectors [J]. J. Appl. Phys., 1996, 79 (10):7433-7473.[8] Ye J D, Gu S L, Zhu S M, et al. Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions [J]. Appl. Phys. Lett., 2006, 88 (18):182112-1-3.[9] Ohta H, Hirano M, Nakahara K, et al. Fabrication and photoresponse of a pn-heterojunction diode composed of transpa-rent oxide semiconductors p-NiO and n-ZnO [J]. Appl. Phys. Lett., 2003, 83 (5):1029-1-3.[10] Brtzmann M, Vetter U, Hofsss H. BN/ZnO heterojunction diodes with apparently giant ideality factors [J]. J. Appl. Phys., 2009, 106 (6):063704-1-9.[11] Chuang R W, Wu R X, Lai L W, et al. ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique [J]. Appl. Phys. Lett., 2007, 91 (23):231113-1-3.[12] Tankala K, DebRoy T, Alam M. Oxidation of diamond films synthesized by hot filament assisted chemical vapor deposition [J]. J. Materials Research, 1990, 5 (11):2483-2489.[13] Liu B C, Liu C H, Sun L J, et al. Influence of ZnO microstructure variation on its photoelectricity characteristic [J]. Chin. J. Lumin. (发光学报), 2010, 31 (2):194-198 (in Chinese).[14] Hu J Q, Bando Y. Growth and optical properties of single-crystal tubular ZnO whiskers [J]. Appl. Phys. Lett., 2003, 82 (9):1401-1403.[15] Cho S, Ma J, Kim Y, et al. Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn [J]. Appl. Phys. Lett., 1999, 75 (18):2761-2763.[16] Zhang X, Liu Y Z, Kang C Y, et al. Effects of annealing atmosphere and temperature on the structure and photoluminescence of ZnO films prepared by pulsed laser deposition [J]. Chin. J. Lumin. (发光学报), 2010, 31 (5):613-618 (in English).[17] Koteeswara Reddy N, Ahsanulhaq Q, Kim J H, et al. Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures [J]. Appl. Phys. Lett., 2008, 92 (4):043127-2763.[18] Kim H Y, Kim J H, Kim Y J, et al. Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures [J]. Optical Materials, 2001, 17 (1-2):141-144.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

用电化学沉积法制备ZnO/Cu₂O异质p-n结

氧化锌微纳结构紫外发光与激光器件研究进展

n⁃Ga₂O₃/p⁃GaAs异质结日盲紫外探测器制备

直接型卤素钙钛矿X射线探测器结构设计研究进展

用于雪崩光电探测器响应度增强的超透镜设计与仿真