InxGa1-xAs/GaAs量子阱应变量对变温光致发光谱的影响

叶志成; 舒永春; 曹雪; 龚亮; 姚江宏; 皮彪; 邢晓东; 许京军

doi:null

您当前的位置：

首页 >

文章列表页 >

In_xGa_1-xAs/GaAs量子阱应变量对变温光致发光谱的影响

器件制备及器件物理 | 更新时间：2020-08-12

- In_xGa_1-xAs/GaAs量子阱应变量对变温光致发光谱的影响
- Strain Effect on Temperature Dependent Photoluminescence from In_xGa_1-xAs/GaAs Quantum Wells
- 发光学报 2011年32卷第2期页码：164-168
- 作者机构：
  
  南开大学泰达应用物理学院弱光非线性教育部重点实验室天津,300457
- 作者简介：
- 基金信息：
  
  天津应用基础研究基金(06YFJZJC01100, 08JCYBJC14800)();国家"();863"();计划(2006AA03Z413)资助项目
- DOI：
  中图分类号： O472.3
- 收稿日期：2010-06-30，
  
  修回日期：2010-10-19，
  
  网络出版日期：2011-02-22，
  
  纸质出版日期：2011-02-22
- 稿件说明：
移动端阅览
叶志成, 舒永春, 曹雪, 龚亮, 姚江宏, 皮彪, 邢晓东, 许京军. InxGa1-xAs/GaAs量子阱应变量对变温光致发光谱的影响[J]. 发光学报, 2011,32(2): 164-168

YE Zhi-cheng, SHU Yong-chun, CAO Xue, GONG Liang, YAO Jiang-hong, PI Biao, XING Xiao-dong, XU Jing-jun. Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells[J]. Chinese Journal of Luminescence, 2011,32(2): 164-168
叶志成, 舒永春, 曹雪, 龚亮, 姚江宏, 皮彪, 邢晓东, 许京军. InxGa1-xAs/GaAs量子阱应变量对变温光致发光谱的影响[J]. 发光学报, 2011,32(2): 164-168 DOI：

YE Zhi-cheng, SHU Yong-chun, CAO Xue, GONG Liang, YAO Jiang-hong, PI Biao, XING Xiao-dong, XU Jing-jun. Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells[J]. Chinese Journal of Luminescence, 2011,32(2): 164-168 DOI：

摘要

利用变温光致发光(PL)研究了In

0.182

0.818

As/GaAs应变及应变补偿量子阱在77~300 K温度范围内的发光特性。随着温度

的升高

PL峰位向低能方向移动。在应力作用下In

0.182

0.818

As/GaAs量子阱的价带顶轻空穴带和重空穴带发生了劈裂。通过理论计算推导应变随温度变化对In

As/GaAs量子阱带隙能量的影响。在Varshni公式基础上

引入由应力导致的带隙能量变化项

。带隙能量计算结果与实验数据吻合较好。通过不同温度下光致发光半峰全宽的变化验证了应力随温度变化对量子阱发光峰的影响。

Abstract

The variable-temperature photoluminescence (PL) spectra of In

0.182

0.818

As/GaAs strained and strain-compensation quantum wells (QWs) were experimentally determined in the temperature range of 77~300 K. The PL peak positions shift to lower energies with the increasing temperature. Strain which is induced by lattice mismatch between epitaxial layer and substrate removes the degeneracy between the light-hole and heavy-hole states at the top of the valence band. A theoretical calculation was presented that takes into account the temperature-induced variations in band gap and biaxial strain to explain the PL spectra.Based on the Varshni relationship

the change of the band gap energy caused by the strain was introduced. It is the function of the temperature and the alloy composition. The calculated results are agree with the experimental data. The full-width at half-maximum (FWHM) of PL spectra of In

0.182

0.818

As/GaAs strained three quantum wells is larger than that of strain-compensation one

and increases more quickly

which is caused by exciton-LO phonon coupling. At last

strain effect on the PL spectra was confirmed through the FWHM curve at various temperature.

关键词

Keywords

references

Lam Y, Loher J P, Singh J. Comparison of steady state and transient characteristics of lattice matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum well lasers [J]. IEEE J. Quantum Electron., 1992, 28 (5):1248-1260.[2] Chan M C Y, Surya C, Wai P K A. The effects of interdiffusion on the subbands in GaxIn1-xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 m operation wavelengths [J]. J. Appl. Phys., 2001, 90 (1):197-201.[3] Muraki M, Fukatsu S, Shiraki Y, et al. Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells [J]. Appl. Phys. Lett., 1992, 61 (5):557-559.[4] Zhang Tiemin, Miao Guoqing, Song Hang, et al. Effect of buffer layer growth temperature on structural and electrical propertied of In0.82Ga0.18As with two step growth technique [J]. Chin. J. Lumin. (发光学报), 2009, 30 (6):787-791 (in English).[5] Guo Hongying, Pan Dingzhen, Fan Junqing, et al. Characterization and analysis on the optical properties of InxGa1-xN/InyGa1-yN multiple quantum well stuctures [J]. Chin. J. Lumin. (发光学报), 2009, 30 (6):797-801 (in Cinese).[6] Wei Guohua, Wang Bin, Li Junmei, et al. Temperature dependence of the photoluminescence properties and the research on the mechanism of In0.2Ga0.8As/GaAs single quantum well [J]. Chin. J. Lumin. (发光学报), 2010, 31 (5):619-623 (in Cinese).[7] Sang W R, In K, Byung D C, et al. The effect of strain on the interdiffusion in InGaAs/GaAs quantum wells [J]. Appl. Phys. Lett., 1995, 67 (10):1417-1419.[8] Sung L W, Lin H H. Highly strained 1.24-m InGaAs/GaAs quantum well lasers [J]. Appl. Phys. Lett., 2003, 83 (6):1107-1109.[9] Huang Y S, Qiang H, Pollak F H, et al. Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well [J]. J. Appl. Phys., 1991, 70 (12):7537-7542.[10] Shen Xuechu. Spectra and Optical Properties of Semiconductors(半导体光谱与光学性质)[M]. The Second Edition, Beijing: Science Press, 2002 (in Chinese).[11] Yan Dawei, Song Hang, Mao Guoqing, et al. Lattice mismatch effect on photoluminescence from InAsxP1-x/InP heterostructuer [J]. Chin. J. Lumin. (发光学报), 2009, 30 (3):309-313 (in Chinese).[12] Varshni Y P. Temperature dependence of the energy gap in semiconductors [J]. Physica, 1967, 34 :149-154.[13] Botha J R, Leitch A W R. Temperature dependence of the photoluminescence properties and band gap energy of InxGa1-xAs/ GaAs quantum wells [J]. J. Electron. Mater., 2000, 29 (12):1362-1371.[14] Anderson N G, Laidig W D, Kolbas R M, et al. Optical characterization of pseudomorphic InxGa1-xAs-GaAs single-quantum-well heterostructures [J]. J. Appl. Phys., 1986, 60 (7):2361-2367.[15] Orlova N S. Anharmonic effects in semiconductors with sphalerite structure from data of pressure and temperature depen-dences of elastic constants [J]. Cryst. Res. Technol., 1989, 24 (3):K39-K41.[16] Burenkov Y A, Burdukov Y M, Davydov S U, et al. Temperature dependence of the elastic constants of GaAs [J]. Sov. Phys. Solid State., 1973, 15 (6):1175-1177.[17] Nolte D D, Wahrkiewicz W, Haller E E. Band-edge hydrostatic deformation potentials in Ⅲ-V semiconductors [J]. Phys. Rev. Lett., 1987, 59 (4):501-504.[18] Shen W Z, Shen S C, Tang W G, et al. Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells [J]. J. Appl. Phys., 1995, 78 (2):1178-1182.

浏览量

164

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

基于InGaAs/GaAs量子阱结构的辐射标定因子实验研究

Si掺杂对GaAs纳米线发光特性的影响

ZnO单晶和BeZnO合金的生长及其紫外探测器研究

In插入层对硅衬底外延InN晶体质量和光学特性的影响

采用MBE生长1.6~2.3 μm InGaAsSb/ AlGaAsSb多量子阱